Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2016-03-30

AUTHORS

Feng Zhang, Peng-Xiang Hou, Chang Liu, Bing-Wei Wang, Hua Jiang, Mao-Lin Chen, Dong-Ming Sun, Jin-Cheng Li, Hong-Tao Cong, Esko I. Kauppinen, Hui-Ming Cheng

ABSTRACT

The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6](3-) precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance. More... »

PAGES

11160

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/ncomms11160

DOI

http://dx.doi.org/10.1038/ncomms11160

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006289981

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/27025784


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