Etching and narrowing of graphene from the edges View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-08

AUTHORS

Xinran Wang, Hongjie Dai

ABSTRACT

Large-scale graphene electronics requires lithographic patterning of narrow graphene nanoribbons for device integration. However, conventional lithography can only reliably pattern approximately 20-nm-wide GNR arrays limited by lithography resolution, while sub-5-nm GNRs are desirable for high on/off ratio field-effect transistors at room temperature. Here, we devised a gas phase chemical approach to etch graphene from the edges without damaging its basal plane. The reaction involved high temperature oxidation of graphene in a slightly reducing environment in the presence of ammonia to afford controlled etch rate (less than or approximately 1 nm min(-1)). We fabricated approximately 20-30-nm-wide graphene nanoribbon arrays lithographically, and used the gas phase etching chemistry to narrow the ribbons down to <10 nm. For the first time, a high on/off ratio up to approximately 10(4) was achieved at room temperature for field-effect transistors built with sub-5-nm-wide graphene nanoribbon semiconductors derived from lithographic patterning and narrowing. Our controlled etching method opens up a chemical way to control the size of various graphene nano-structures beyond the capability of top-down lithography. More... »

PAGES

661

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nchem.719

DOI

http://dx.doi.org/10.1038/nchem.719

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003521282

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/20651729


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44 schema:description Large-scale graphene electronics requires lithographic patterning of narrow graphene nanoribbons for device integration. However, conventional lithography can only reliably pattern approximately 20-nm-wide GNR arrays limited by lithography resolution, while sub-5-nm GNRs are desirable for high on/off ratio field-effect transistors at room temperature. Here, we devised a gas phase chemical approach to etch graphene from the edges without damaging its basal plane. The reaction involved high temperature oxidation of graphene in a slightly reducing environment in the presence of ammonia to afford controlled etch rate (less than or approximately 1 nm min(-1)). We fabricated approximately 20-30-nm-wide graphene nanoribbon arrays lithographically, and used the gas phase etching chemistry to narrow the ribbons down to <10 nm. For the first time, a high on/off ratio up to approximately 10(4) was achieved at room temperature for field-effect transistors built with sub-5-nm-wide graphene nanoribbon semiconductors derived from lithographic patterning and narrowing. Our controlled etching method opens up a chemical way to control the size of various graphene nano-structures beyond the capability of top-down lithography.
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