Strained silicon as a new electro-optic material View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2006-05

AUTHORS

Rune S. Jacobsen, Karin N. Andersen, Peter I. Borel, Jacob Fage-Pedersen, Lars H. Frandsen, Ole Hansen, Martin Kristensen, Andrei V. Lavrinenko, Gaid Moulin, Haiyan Ou, Christophe Peucheret, Beáta Zsigri, Anders Bjarklev

ABSTRACT

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized. The slow progress within silicon optoelectronics, where electronic and optical functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon. Recently, however, a continuous-wave Raman silicon laser was demonstrated; if an effective modulator could also be realized in silicon, data processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide, and the induced nonlinear coefficient, chi(2) approximately 15 pm V(-1), makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck in modern computers by replacing the electronic bus with a much faster optical alternative. More... »

PAGES

199

Journal

TITLE

Nature

ISSUE

7090

VOLUME

441

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1038/nature04706

DOI

http://dx.doi.org/10.1038/nature04706

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043653256

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/16688172


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30 schema:description For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized. The slow progress within silicon optoelectronics, where electronic and optical functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon. Recently, however, a continuous-wave Raman silicon laser was demonstrated; if an effective modulator could also be realized in silicon, data processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide, and the induced nonlinear coefficient, chi(2) approximately 15 pm V(-1), makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck in modern computers by replacing the electronic bus with a much faster optical alternative.
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