A continuous-wave Raman silicon laser View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2005-02

AUTHORS

Haisheng Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, Mario Paniccia

ABSTRACT

Achieving optical gain and/or lasing in silicon has been one of the most challenging goals in silicon-based photonics because bulk silicon is an indirect bandgap semiconductor and therefore has a very low light emission efficiency. Recently, stimulated Raman scattering has been used to demonstrate light amplification and lasing in silicon. However, because of the nonlinear optical loss associated with two-photon absorption (TPA)-induced free carrier absorption (FCA), until now lasing has been limited to pulsed operation. Here we demonstrate a continuous-wave silicon Raman laser. Specifically, we show that TPA-induced FCA in silicon can be significantly reduced by introducing a reverse-biased p-i-n diode embedded in a silicon waveguide. The laser cavity is formed by coating the facets of the silicon waveguide with multilayer dielectric films. We have demonstrated stable single mode laser output with side-mode suppression of over 55 dB and linewidth of less than 80 MHz. The lasing threshold depends on the p-i-n reverse bias voltage and the laser wavelength can be tuned by adjusting the wavelength of the pump laser. The demonstration of a continuous-wave silicon laser represents a significant milestone for silicon-based optoelectronic devices. More... »

PAGES

725

References to SciGraph publications

  • 2005-01. An all-silicon Raman laser in NATURE
  • Journal

    TITLE

    Nature

    ISSUE

    7027

    VOLUME

    433

    Author Affiliations

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  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1038/nature03346

    DOI

    http://dx.doi.org/10.1038/nature03346

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1051434741

    PUBMED

    https://www.ncbi.nlm.nih.gov/pubmed/15716948


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