Determination of Nitrogen in Silicon Carbide by Secondary Ion Mass Spectrometry View Full Text


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Article Info

DATE

2004-03

AUTHORS

B. Ya. Ber, D. Yu. Kazantsev, E. V. Kalinina, A. P. Kovarskii, V. G. Kossov, A. Hallen, R. R. Yafaev

ABSTRACT

The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the 26(CN)– fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 1016 cm–3. This result is attained in measurements at high mass resolution (M/ΔM = 7500, interference peak 26(13C2)–). More... »

PAGES

250-254

References to SciGraph publications

  • 1996-05. Elevated temperature nitrogen implants in 6H-SiC in JOURNAL OF ELECTRONIC MATERIALS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1023/b:janc.0000018968.09670.88

    DOI

    http://dx.doi.org/10.1023/b:janc.0000018968.09670.88

    DIMENSIONS

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