Ontology type: schema:ScholarlyArticle
2004-03
AUTHORSB. Ya. Ber, D. Yu. Kazantsev, E. V. Kalinina, A. P. Kovarskii, V. G. Kossov, A. Hallen, R. R. Yafaev
ABSTRACTThe emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the 26(CN)– fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 1016 cm–3. This result is attained in measurements at high mass resolution (M/ΔM = 7500, interference peak 26(13C2)–). More... »
PAGES250-254
http://scigraph.springernature.com/pub.10.1023/b:janc.0000018968.09670.88
DOIhttp://dx.doi.org/10.1023/b:janc.0000018968.09670.88
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