The Role of Defect Correlations in Ferromagnetic III–V Semiconductors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-02

AUTHORS

C. Timm, F. von Oppen

ABSTRACT

We consider the effect of the defect configuration on the physical properties of diluted ferromagnetic III–V semiconductors, studying in particular the changes caused by annealing. Correlations of defect positions arise naturally during annealing due to strong Coulomb interactions between defects. The origin of these interactions is the high degree of compensation. We show that correlated positions are required for a description consistent with experiments. More... »

PAGES

23-25

Identifiers

URI

http://scigraph.springernature.com/pub.10.1023/a:1023259912543

DOI

http://dx.doi.org/10.1023/a:1023259912543

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1024350188


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