Long-wavelength quantum-dot lasers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-11

AUTHORS

M. Grundmann, N. N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Yu. G. Musikhin, Zh. I. Alferov, J. A. Lott, N. D. Zhakharov, P. Werner

ABSTRACT

Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. More... »

PAGES

643-647

Identifiers

URI

http://scigraph.springernature.com/pub.10.1023/a:1020610109933

DOI

http://dx.doi.org/10.1023/a:1020610109933

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020305219


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