Electrostatic Model of Edge Luminescence of Heavily Doped Degenerate Semiconductors View Full Text


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Article Info

DATE

2002-05

AUTHORS

N. A. Poklonskii, S. A. Vyrko

ABSTRACT

We propose a model of the narrowing of a forbidden band due to doping of crystalline semiconductors with hydrogen‐like impurities with allowance for the following factors: spatial fluctuations of an electrostatical potential, exchange interaction of majority charge carriers, screening of the minority charge carrier by a cloud of the majority ones, and also tunneling at the level of percolation. The dependence of the position of the edge luminescence band maximum on the concentration of impurities for the degrees of their compensation from a weak to an intermediate one has been calculated. The results agree with the experimental data for cryogenic temperatures in a wide range of change in the equilibrium concentration of electrons (holes). More... »

PAGES

434-443

Identifiers

URI

http://scigraph.springernature.com/pub.10.1023/a:1019715602928

DOI

http://dx.doi.org/10.1023/a:1019715602928

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014162614


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