1997-07
AUTHORSX Milhet, H Garem, J. L Demenet, J Rabier, T Rouxel
ABSTRACTSome preliminary results of dislocation analysis and associated glide systems in as-grown as well as in superplastically deformed β silicon nitride are presented. Transmission electron microscopy observations using the weak-beam technique, are reported. [0 0 0 1] {1 0 1 0} and 1/3〈1 2 1 0〉 {1 0 1 1} glide systems have been characterized. In the basal plane, a superposition of two hexagonal networks built with screw dipoles has been observed. Both a sequence extended node–constricted node and partial dislocations have been identified in these networks which clearly evinces dislocation dissociation in β-silicon nitride following the reaction 1/3〈2 1 1 0〉→1/3 〈1 0 1 0〉+1/3 〈1 1 0 0〉. More... »
PAGES3733-3738
http://scigraph.springernature.com/pub.10.1023/a:1018659203552
DOIhttp://dx.doi.org/10.1023/a:1018659203552
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