Dislocations studies in β-silicon nitride View Full Text


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Article Info

DATE

1997-07

AUTHORS

X Milhet, H Garem, J. L Demenet, J Rabier, T Rouxel

ABSTRACT

Some preliminary results of dislocation analysis and associated glide systems in as-grown as well as in superplastically deformed β silicon nitride are presented. Transmission electron microscopy observations using the weak-beam technique, are reported. [0 0 0 1] {1 0 1 0} and 1/3〈1 2 1 0〉 {1 0 1 1} glide systems have been characterized. In the basal plane, a superposition of two hexagonal networks built with screw dipoles has been observed. Both a sequence extended node–constricted node and partial dislocations have been identified in these networks which clearly evinces dislocation dissociation in β-silicon nitride following the reaction 1/3〈2 1 1 0〉→1/3 〈1 0 1 0〉+1/3 〈1 1 0 0〉. More... »

PAGES

3733-3738

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1023/a:1018659203552

DOI

http://dx.doi.org/10.1023/a:1018659203552

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035839415


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