Silicon Wafer Bonding by Chemical Assembly of a Surface by Molecular Layering and Gas Cutting View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-10

AUTHORS

A. L. Suvorov, V. I. Grafutin, A. G. Zaluzhnyi, M. A. Kozodaev, E. P. Prokopiev, B. Yu. Sharkov, S. P. Timoshenkov, Yu. A. Chaplygin, V. F. Reutov

ABSTRACT

It is suggested that chemical and heat treatment of surfaces under moist conditions (including also chemical assembly of a surface by molecular layering) and gas-cutting be used to fabricate silicon on insulator structures to obtain silicon wafer surfaces with prescribed chemical composition, activation, and surface modification.

PAGES

793-800

Identifiers

URI

http://scigraph.springernature.com/pub.10.1023/a:1013888021077

DOI

http://dx.doi.org/10.1023/a:1013888021077

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020039904


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