Study of a reaction at the solid Cu/α-SiC interface View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-03

AUTHORS

Zhangmin Wang, P Wynblatt

ABSTRACT

A solid-state wetting technique has been used to investigate the interface between solid Cu and α-SiC at high temperatures. An intermediate phase is found to form as an interfacial reaction product between Cu and SiC at high temperature, and to thicken upon further heating at 1123 K. The interfacial phase has an approximate composition of Cu–19 at%Si–5 at%C and displays an f.c.c. structure. Such a phase is not present in the published Cu–Si phase diagram, and forms under conditions which cannot be explained from that phase diagram. It is postulated that this phase represents a previously unreported silicide of Cu which may be stabilized by the presence of C in solution. © 1998 Chapman & Hall More... »

PAGES

1177-1181

References to SciGraph publications

Journal

TITLE

Journal of Materials Science

ISSUE

5

VOLUME

33

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1023/a:1004317407690

DOI

http://dx.doi.org/10.1023/a:1004317407690

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026204746


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