Thermal Conductivity Degradation and Microstructural Damage Characterization in Low-Dose Ion Beam-Irradiated 3C-SiC View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-12

AUTHORS

Vinay S. Chauhan, M. Faisal Riyad, Xinpeng Du, Changdong Wei, Beata Tyburska-Püschel, Ji-Cheng Zhao, Marat Khafizov

ABSTRACT

This study assesses the impact of low-dose and low-temperature irradiation on the properties of cubic silicon carbide (3C-SiC). 3C-SiC was irradiated with Kr ions to different fluences at 420 K (147 °C). Raman spectroscopy was used to investigate the impact of irradiation-induced defects on vibrational modes and time-domain thermoreflectance (TDTR) was used to measure thermal conductivity. We observe a noticeable reduction in thermal conductivity with increasing fluence. Analysis of Raman spectra reveals the longitudinal optical (LO) and transverse optical (TO) modes with noticeable peak broadening of LO mode with increasing dosage. We also notice a decrease of ratio of peak intensities of LO and TO modes in irradiated samples. We observe a correlation between the thermal conductivity reduction and the decrease in the peak intensity ratio and attribute this to the accumulation of charged vacancy defects. More... »

PAGES

61-69

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s40553-017-0107-3

DOI

http://dx.doi.org/10.1007/s40553-017-0107-3

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1084929029


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