Temperature and gate-bias-dependent charge transport in inkjet-printed polymer field-effect transistor View Full Text


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Article Info

DATE

2021-11-16

AUTHORS

Jiyoul Lee, Jaeman Jang, Jong Won Chung, Minho Yoon, Dae Hwan Kim

ABSTRACT

To rationally design and synthesize organic semiconductor materials and optimize the printing processes of semiconductor films, it is necessary to understand the charge transport behavior of inkjet-printed organic semiconductor films. Herein, the temperature and gate-bias-dependent charge transport behaviors in a polymer field-effect transistor (PFET) were studied. The PFET used a poly[(tetryldodecyloctathiophene-alt-didodecylbithiazole)-co-(tetryldodecylhexathiophene-alt-didodecylbithiazole)] (P(8T2Z-co-6T2Z)-12) polymer film formed by inkjet printing as the active channel layer. The temperature-dependent mobility curves of the PFET measured under various gate-bias conditions fit well with the multiple trap and release (MTR) model and polaron hopping transport model (PHM) at temperatures below and above 250 K, respectively. The charge transport behaviors in the inkjet-printed P(8T2Z-co-6T2Z)-12 film were revealed through a combination of the MTR model and PHM. At temperatures below 250 K, charge carriers were negligibly affected by lattice vibration and required a low activation energy to move from site to site. In contrast, at temperatures above 250 K, charge carriers gradually coupled with phonons under the influence of lattice vibration and thus required a relatively higher activation energy. The insight into charge transport obtained through this study would provide practical benefits for the development of organic electronic device design and fabrication. More... »

PAGES

1063-1068

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s40042-021-00335-4

DOI

http://dx.doi.org/10.1007/s40042-021-00335-4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1142626944


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