Temperature and gate-bias-dependent charge transport in inkjet-printed polymer field-effect transistor View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2021-11-16

AUTHORS

Jiyoul Lee, Jaeman Jang, Jong Won Chung, Minho Yoon, Dae Hwan Kim

ABSTRACT

To rationally design and synthesize organic semiconductor materials and optimize the printing processes of semiconductor films, it is necessary to understand the charge transport behavior of inkjet-printed organic semiconductor films. Herein, the temperature and gate-bias-dependent charge transport behaviors in a polymer field-effect transistor (PFET) were studied. The PFET used a poly[(tetryldodecyloctathiophene-alt-didodecylbithiazole)-co-(tetryldodecylhexathiophene-alt-didodecylbithiazole)] (P(8T2Z-co-6T2Z)-12) polymer film formed by inkjet printing as the active channel layer. The temperature-dependent mobility curves of the PFET measured under various gate-bias conditions fit well with the multiple trap and release (MTR) model and polaron hopping transport model (PHM) at temperatures below and above 250 K, respectively. The charge transport behaviors in the inkjet-printed P(8T2Z-co-6T2Z)-12 film were revealed through a combination of the MTR model and PHM. At temperatures below 250 K, charge carriers were negligibly affected by lattice vibration and required a low activation energy to move from site to site. In contrast, at temperatures above 250 K, charge carriers gradually coupled with phonons under the influence of lattice vibration and thus required a relatively higher activation energy. The insight into charge transport obtained through this study would provide practical benefits for the development of organic electronic device design and fabrication. More... »

PAGES

1063-1068

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s40042-021-00335-4

DOI

http://dx.doi.org/10.1007/s40042-021-00335-4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1142626944


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/01", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Mathematical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Department of Smart Green Technology Engineering, Pukyong National University, 48513, Busan, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.412576.3", 
          "name": [
            "Department of Nanotechnology Engineering, Pukyong National University, 48513, Busan, Republic of Korea", 
            "Department of Smart Green Technology Engineering, Pukyong National University, 48513, Busan, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lee", 
        "givenName": "Jiyoul", 
        "id": "sg:person.0701712261.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0701712261.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Electrical Engineering, Kookmin University, 02707, Seoul, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.91443.3b", 
          "name": [
            "School of Electrical Engineering, Kookmin University, 02707, Seoul, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jang", 
        "givenName": "Jaeman", 
        "id": "sg:person.010737624421.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010737624421.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Material Research Center, Samsung Advanced Institute of Technology, 16678, Suwon, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.419666.a", 
          "name": [
            "Material Research Center, Samsung Advanced Institute of Technology, 16678, Suwon, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chung", 
        "givenName": "Jong Won", 
        "id": "sg:person.0750025461.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0750025461.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Smart Green Technology Engineering, Pukyong National University, 48513, Busan, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.412576.3", 
          "name": [
            "Department of Smart Green Technology Engineering, Pukyong National University, 48513, Busan, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yoon", 
        "givenName": "Minho", 
        "id": "sg:person.07546212627.67", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07546212627.67"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Electrical Engineering, Kookmin University, 02707, Seoul, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.91443.3b", 
          "name": [
            "School of Electrical Engineering, Kookmin University, 02707, Seoul, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "Dae Hwan", 
        "id": "sg:person.01205110065.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01205110065.61"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2021-11-16", 
    "datePublishedReg": "2021-11-16", 
    "description": "To rationally design and synthesize organic semiconductor materials and optimize the printing processes of semiconductor films, it is necessary to understand the charge transport behavior of inkjet-printed organic semiconductor films. Herein, the temperature and gate-bias-dependent charge transport behaviors in a polymer field-effect transistor (PFET) were studied. The PFET used a poly[(tetryldodecyloctathiophene-alt-didodecylbithiazole)-co-(tetryldodecylhexathiophene-alt-didodecylbithiazole)] (P(8T2Z-co-6T2Z)-12) polymer film formed by inkjet printing as the active channel layer. The temperature-dependent mobility curves of the PFET measured under various gate-bias conditions fit well with the multiple trap and release (MTR) model and polaron hopping transport model (PHM) at temperatures below and above 250\u00a0K, respectively. The charge transport behaviors in the inkjet-printed P(8T2Z-co-6T2Z)-12 film were revealed through a combination of the MTR model and PHM. At temperatures below 250\u00a0K, charge carriers were negligibly affected by lattice vibration and required a low activation energy to move from site to site. In contrast, at temperatures above 250\u00a0K, charge carriers gradually coupled with phonons under the influence of lattice vibration and thus required a relatively higher activation energy. The insight into charge transport obtained through this study would provide practical benefits for the development of organic electronic device design and fabrication.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s40042-021-00335-4", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1042000", 
        "issn": [
          "0374-4884", 
          "1976-8524"
        ], 
        "name": "Journal of the Korean Physical Society", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "11", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "79"
      }
    ], 
    "keywords": [
      "polymer field-effect transistors", 
      "charge transport behavior", 
      "field-effect transistors", 
      "semiconductor films", 
      "charge transport", 
      "transport behavior", 
      "organic semiconductor materials", 
      "organic semiconductor films", 
      "charge carriers", 
      "active channel layer", 
      "gate bias conditions", 
      "low activation energy", 
      "activation energy", 
      "polymer films", 
      "inkjet printing", 
      "electronic device design", 
      "channel layer", 
      "high activation energy", 
      "semiconductor materials", 
      "device design", 
      "films", 
      "release model", 
      "lattice vibrations", 
      "transport model", 
      "transistors", 
      "vibration", 
      "temperature", 
      "MTR model", 
      "multiple traps", 
      "Inkjet", 
      "fabrication", 
      "mobility curves", 
      "carriers", 
      "energy", 
      "Herein", 
      "CO", 
      "printing", 
      "behavior", 
      "layer", 
      "transport", 
      "materials", 
      "model", 
      "polarons", 
      "design", 
      "sites", 
      "PHM", 
      "practical benefits", 
      "phonons", 
      "process", 
      "influence", 
      "conditions", 
      "curves", 
      "traps", 
      "combination", 
      "insights", 
      "development", 
      "contrast", 
      "study", 
      "benefits", 
      "dependent charge transport behaviors", 
      "temperature-dependent mobility curves", 
      "organic electronic device design", 
      "dependent charge transport", 
      "inkjet-printed polymer field-effect transistor"
    ], 
    "name": "Temperature and gate-bias-dependent charge transport in inkjet-printed polymer field-effect transistor", 
    "pagination": "1063-1068", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1142626944"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s40042-021-00335-4"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s40042-021-00335-4", 
      "https://app.dimensions.ai/details/publication/pub.1142626944"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:59", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_880.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s40042-021-00335-4"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00335-4'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00335-4'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00335-4'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00335-4'


 

This table displays all metadata directly associated to this object as RDF triples.

157 TRIPLES      21 PREDICATES      89 URIs      81 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s40042-021-00335-4 schema:about anzsrc-for:01
2 anzsrc-for:02
3 schema:author Nbe05fdad467a445eabf5d7b25f4396c7
4 schema:datePublished 2021-11-16
5 schema:datePublishedReg 2021-11-16
6 schema:description To rationally design and synthesize organic semiconductor materials and optimize the printing processes of semiconductor films, it is necessary to understand the charge transport behavior of inkjet-printed organic semiconductor films. Herein, the temperature and gate-bias-dependent charge transport behaviors in a polymer field-effect transistor (PFET) were studied. The PFET used a poly[(tetryldodecyloctathiophene-alt-didodecylbithiazole)-co-(tetryldodecylhexathiophene-alt-didodecylbithiazole)] (P(8T2Z-co-6T2Z)-12) polymer film formed by inkjet printing as the active channel layer. The temperature-dependent mobility curves of the PFET measured under various gate-bias conditions fit well with the multiple trap and release (MTR) model and polaron hopping transport model (PHM) at temperatures below and above 250 K, respectively. The charge transport behaviors in the inkjet-printed P(8T2Z-co-6T2Z)-12 film were revealed through a combination of the MTR model and PHM. At temperatures below 250 K, charge carriers were negligibly affected by lattice vibration and required a low activation energy to move from site to site. In contrast, at temperatures above 250 K, charge carriers gradually coupled with phonons under the influence of lattice vibration and thus required a relatively higher activation energy. The insight into charge transport obtained through this study would provide practical benefits for the development of organic electronic device design and fabrication.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N0b74f71de81b47bfad066e3e895e395d
11 Na01952ca9acb4a85844660c26e2da273
12 sg:journal.1042000
13 schema:keywords CO
14 Herein
15 Inkjet
16 MTR model
17 PHM
18 activation energy
19 active channel layer
20 behavior
21 benefits
22 carriers
23 channel layer
24 charge carriers
25 charge transport
26 charge transport behavior
27 combination
28 conditions
29 contrast
30 curves
31 dependent charge transport
32 dependent charge transport behaviors
33 design
34 development
35 device design
36 electronic device design
37 energy
38 fabrication
39 field-effect transistors
40 films
41 gate bias conditions
42 high activation energy
43 influence
44 inkjet printing
45 inkjet-printed polymer field-effect transistor
46 insights
47 lattice vibrations
48 layer
49 low activation energy
50 materials
51 mobility curves
52 model
53 multiple traps
54 organic electronic device design
55 organic semiconductor films
56 organic semiconductor materials
57 phonons
58 polarons
59 polymer field-effect transistors
60 polymer films
61 practical benefits
62 printing
63 process
64 release model
65 semiconductor films
66 semiconductor materials
67 sites
68 study
69 temperature
70 temperature-dependent mobility curves
71 transistors
72 transport
73 transport behavior
74 transport model
75 traps
76 vibration
77 schema:name Temperature and gate-bias-dependent charge transport in inkjet-printed polymer field-effect transistor
78 schema:pagination 1063-1068
79 schema:productId N47513dc7bd9f462f8ad3d138cf9c4d8f
80 N690d46e45ead4adf8ab09ddc21deb696
81 schema:sameAs https://app.dimensions.ai/details/publication/pub.1142626944
82 https://doi.org/10.1007/s40042-021-00335-4
83 schema:sdDatePublished 2022-01-01T18:59
84 schema:sdLicense https://scigraph.springernature.com/explorer/license/
85 schema:sdPublisher N649f00e73d8f4c33acff5bebf8caf7c7
86 schema:url https://doi.org/10.1007/s40042-021-00335-4
87 sgo:license sg:explorer/license/
88 sgo:sdDataset articles
89 rdf:type schema:ScholarlyArticle
90 N0b74f71de81b47bfad066e3e895e395d schema:issueNumber 11
91 rdf:type schema:PublicationIssue
92 N2dacbb846ec04a75804f42bf7b6eb4aa rdf:first sg:person.0750025461.04
93 rdf:rest Nedfb0123d66946b1aba776365a0e320d
94 N47513dc7bd9f462f8ad3d138cf9c4d8f schema:name doi
95 schema:value 10.1007/s40042-021-00335-4
96 rdf:type schema:PropertyValue
97 N649f00e73d8f4c33acff5bebf8caf7c7 schema:name Springer Nature - SN SciGraph project
98 rdf:type schema:Organization
99 N690d46e45ead4adf8ab09ddc21deb696 schema:name dimensions_id
100 schema:value pub.1142626944
101 rdf:type schema:PropertyValue
102 N916e68a18f514f16988b0d132c4c0fcf rdf:first sg:person.010737624421.43
103 rdf:rest N2dacbb846ec04a75804f42bf7b6eb4aa
104 Na01952ca9acb4a85844660c26e2da273 schema:volumeNumber 79
105 rdf:type schema:PublicationVolume
106 Nbe05fdad467a445eabf5d7b25f4396c7 rdf:first sg:person.0701712261.31
107 rdf:rest N916e68a18f514f16988b0d132c4c0fcf
108 Nedfb0123d66946b1aba776365a0e320d rdf:first sg:person.07546212627.67
109 rdf:rest Nf38c9695ff53478a95846149f9a540da
110 Nf38c9695ff53478a95846149f9a540da rdf:first sg:person.01205110065.61
111 rdf:rest rdf:nil
112 anzsrc-for:01 schema:inDefinedTermSet anzsrc-for:
113 schema:name Mathematical Sciences
114 rdf:type schema:DefinedTerm
115 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
116 schema:name Physical Sciences
117 rdf:type schema:DefinedTerm
118 sg:journal.1042000 schema:issn 0374-4884
119 1976-8524
120 schema:name Journal of the Korean Physical Society
121 schema:publisher Springer Nature
122 rdf:type schema:Periodical
123 sg:person.010737624421.43 schema:affiliation grid-institutes:grid.91443.3b
124 schema:familyName Jang
125 schema:givenName Jaeman
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010737624421.43
127 rdf:type schema:Person
128 sg:person.01205110065.61 schema:affiliation grid-institutes:grid.91443.3b
129 schema:familyName Kim
130 schema:givenName Dae Hwan
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01205110065.61
132 rdf:type schema:Person
133 sg:person.0701712261.31 schema:affiliation grid-institutes:grid.412576.3
134 schema:familyName Lee
135 schema:givenName Jiyoul
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0701712261.31
137 rdf:type schema:Person
138 sg:person.0750025461.04 schema:affiliation grid-institutes:grid.419666.a
139 schema:familyName Chung
140 schema:givenName Jong Won
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0750025461.04
142 rdf:type schema:Person
143 sg:person.07546212627.67 schema:affiliation grid-institutes:grid.412576.3
144 schema:familyName Yoon
145 schema:givenName Minho
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07546212627.67
147 rdf:type schema:Person
148 grid-institutes:grid.412576.3 schema:alternateName Department of Smart Green Technology Engineering, Pukyong National University, 48513, Busan, Republic of Korea
149 schema:name Department of Nanotechnology Engineering, Pukyong National University, 48513, Busan, Republic of Korea
150 Department of Smart Green Technology Engineering, Pukyong National University, 48513, Busan, Republic of Korea
151 rdf:type schema:Organization
152 grid-institutes:grid.419666.a schema:alternateName Material Research Center, Samsung Advanced Institute of Technology, 16678, Suwon, Republic of Korea
153 schema:name Material Research Center, Samsung Advanced Institute of Technology, 16678, Suwon, Republic of Korea
154 rdf:type schema:Organization
155 grid-institutes:grid.91443.3b schema:alternateName School of Electrical Engineering, Kookmin University, 02707, Seoul, Republic of Korea
156 schema:name School of Electrical Engineering, Kookmin University, 02707, Seoul, Republic of Korea
157 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...