Hole injection improvement using ultrathin Li-TFSI layer in organic light-emitting diodes View Full Text


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Article Info

DATE

2021-11-09

AUTHORS

Kiwoong Kim, Yeonjin Yi, Hyunbok Lee

ABSTRACT

A high device performance of organic light-emitting diodes (OLEDs) can be achieved by minimizing the hole injection barrier (HIB) at the anode interface. However, the work function of indium tin oxide (ITO) is not sufficiently high; thus, the use of an appropriate hole injection layer (HIL) is necessary. In this study, we demonstrated that bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) is an efficient HIL to decrease the HIB in OLEDs. The device performances of hole-only devices (HODs) and OLEDs were significantly enhanced by the insertion of the ultrathin Li-TFSI HIL between the N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) hole transport layer and ITO. In situ ultraviolet photoelectron spectroscopy measurements revealed that the work function of ITO was considerably increased by the deposition of the Li-TFSI HIL. Accordingly, the HIB from ITO to NPB was remarkably reduced. This is the origin of the hole injection improvements in the HODs and OLEDs with the Li-TFSI HIL. Thus, Li-TFSI would be an efficient interface modifier to increase the work function of the electrode and decrease the HIB in various electronic devices. More... »

PAGES

961-965

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s40042-021-00324-7

DOI

http://dx.doi.org/10.1007/s40042-021-00324-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1142471563


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