Hole injection improvement using ultrathin Li-TFSI layer in organic light-emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2021-11-09

AUTHORS

Kiwoong Kim, Yeonjin Yi, Hyunbok Lee

ABSTRACT

A high device performance of organic light-emitting diodes (OLEDs) can be achieved by minimizing the hole injection barrier (HIB) at the anode interface. However, the work function of indium tin oxide (ITO) is not sufficiently high; thus, the use of an appropriate hole injection layer (HIL) is necessary. In this study, we demonstrated that bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) is an efficient HIL to decrease the HIB in OLEDs. The device performances of hole-only devices (HODs) and OLEDs were significantly enhanced by the insertion of the ultrathin Li-TFSI HIL between the N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) hole transport layer and ITO. In situ ultraviolet photoelectron spectroscopy measurements revealed that the work function of ITO was considerably increased by the deposition of the Li-TFSI HIL. Accordingly, the HIB from ITO to NPB was remarkably reduced. This is the origin of the hole injection improvements in the HODs and OLEDs with the Li-TFSI HIL. Thus, Li-TFSI would be an efficient interface modifier to increase the work function of the electrode and decrease the HIB in various electronic devices. More... »

PAGES

961-965

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s40042-021-00324-7

DOI

http://dx.doi.org/10.1007/s40042-021-00324-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1142471563


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/01", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Mathematical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Department of Physics and van der Waals Materials Research Center, Yonsei University, 03722, Seoul, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.15444.30", 
          "name": [
            "Department of Physics and van der Waals Materials Research Center, Yonsei University, 03722, Seoul, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "Kiwoong", 
        "id": "sg:person.01110101660.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01110101660.49"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Physics and van der Waals Materials Research Center, Yonsei University, 03722, Seoul, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.15444.30", 
          "name": [
            "Department of Physics and van der Waals Materials Research Center, Yonsei University, 03722, Seoul, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yi", 
        "givenName": "Yeonjin", 
        "id": "sg:person.01275230676.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01275230676.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Physics and Institute for Accelerator Science, Kangwon National University, 24341, Chuncheon, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.412010.6", 
          "name": [
            "Department of Physics and Institute for Accelerator Science, Kangwon National University, 24341, Chuncheon, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lee", 
        "givenName": "Hyunbok", 
        "id": "sg:person.01043071367.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01043071367.33"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/nmat2119", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051342000", 
          "https://doi.org/10.1038/nmat2119"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2021-11-09", 
    "datePublishedReg": "2021-11-09", 
    "description": "A high device performance of organic light-emitting diodes (OLEDs) can be achieved by minimizing the hole injection barrier (HIB) at the anode interface. However, the work function of indium tin oxide (ITO) is not sufficiently high; thus, the use of an appropriate hole injection layer (HIL) is necessary. In this study, we demonstrated that bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) is an efficient HIL to decrease the HIB in OLEDs. The device performances of hole-only devices (HODs) and OLEDs were significantly enhanced by the insertion of the ultrathin Li-TFSI HIL between the N,N\u2032-di(1-naphthyl)-N,N\u2032-diphenyl-(1,1\u2032-biphenyl)-4,4\u2032-diamine (NPB) hole transport layer and ITO. In situ ultraviolet photoelectron spectroscopy measurements revealed that the work function of ITO was considerably increased by the deposition of the Li-TFSI HIL. Accordingly, the HIB from ITO to NPB was remarkably reduced. This is the origin of the hole injection improvements in the HODs and OLEDs with the Li-TFSI HIL. Thus, Li-TFSI would be an efficient interface modifier to increase the work function of the electrode and decrease the HIB in various electronic devices.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s40042-021-00324-7", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1042000", 
        "issn": [
          "0374-4884", 
          "1976-8524"
        ], 
        "name": "Journal of the Korean Physical Society", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "79"
      }
    ], 
    "keywords": [
      "hole injection layer", 
      "indium tin oxide", 
      "organic light-emitting diodes", 
      "hole injection barrier", 
      "hole injection improvements", 
      "light-emitting diodes", 
      "device performance", 
      "efficient hole injection layer", 
      "work function", 
      "situ ultraviolet photoelectron spectroscopy measurements", 
      "hole transport layer", 
      "high device performance", 
      "diamine (NPB) hole transport layer", 
      "ultraviolet photoelectron spectroscopy measurements", 
      "injection layer", 
      "tin oxide", 
      "anode interface", 
      "photoelectron spectroscopy measurements", 
      "interface modifier", 
      "transport layer", 
      "injection barrier", 
      "Li-TFSI", 
      "electronic devices", 
      "spectroscopy measurements", 
      "diodes", 
      "layer", 
      "N\u2032-diphenyl", 
      "devices", 
      "performance", 
      "lithium salts", 
      "NPB", 
      "electrode", 
      "interface", 
      "oxide", 
      "deposition", 
      "measurements", 
      "improvement", 
      "holes", 
      "ns", 
      "modifiers", 
      "salt", 
      "function", 
      "use", 
      "barriers", 
      "study", 
      "insertion", 
      "HOD", 
      "origin"
    ], 
    "name": "Hole injection improvement using ultrathin Li-TFSI layer in organic light-emitting diodes", 
    "pagination": "961-965", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1142471563"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s40042-021-00324-7"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s40042-021-00324-7", 
      "https://app.dimensions.ai/details/publication/pub.1142471563"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T10:31", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_879.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s40042-021-00324-7"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00324-7'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00324-7'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00324-7'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s40042-021-00324-7'


 

This table displays all metadata directly associated to this object as RDF triples.

127 TRIPLES      22 PREDICATES      74 URIs      65 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s40042-021-00324-7 schema:about anzsrc-for:01
2 anzsrc-for:02
3 schema:author Na760464375184b59b41f4c67b942f803
4 schema:citation sg:pub.10.1038/nmat2119
5 schema:datePublished 2021-11-09
6 schema:datePublishedReg 2021-11-09
7 schema:description A high device performance of organic light-emitting diodes (OLEDs) can be achieved by minimizing the hole injection barrier (HIB) at the anode interface. However, the work function of indium tin oxide (ITO) is not sufficiently high; thus, the use of an appropriate hole injection layer (HIL) is necessary. In this study, we demonstrated that bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) is an efficient HIL to decrease the HIB in OLEDs. The device performances of hole-only devices (HODs) and OLEDs were significantly enhanced by the insertion of the ultrathin Li-TFSI HIL between the N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) hole transport layer and ITO. In situ ultraviolet photoelectron spectroscopy measurements revealed that the work function of ITO was considerably increased by the deposition of the Li-TFSI HIL. Accordingly, the HIB from ITO to NPB was remarkably reduced. This is the origin of the hole injection improvements in the HODs and OLEDs with the Li-TFSI HIL. Thus, Li-TFSI would be an efficient interface modifier to increase the work function of the electrode and decrease the HIB in various electronic devices.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N24ee000893d34758948a9d4ac501bea8
12 N7ca93d0b98ea436cb5598a34054c5524
13 sg:journal.1042000
14 schema:keywords HOD
15 Li-TFSI
16 NPB
17 N′-diphenyl
18 anode interface
19 barriers
20 deposition
21 device performance
22 devices
23 diamine (NPB) hole transport layer
24 diodes
25 efficient hole injection layer
26 electrode
27 electronic devices
28 function
29 high device performance
30 hole injection barrier
31 hole injection improvements
32 hole injection layer
33 hole transport layer
34 holes
35 improvement
36 indium tin oxide
37 injection barrier
38 injection layer
39 insertion
40 interface
41 interface modifier
42 layer
43 light-emitting diodes
44 lithium salts
45 measurements
46 modifiers
47 ns
48 organic light-emitting diodes
49 origin
50 oxide
51 performance
52 photoelectron spectroscopy measurements
53 salt
54 situ ultraviolet photoelectron spectroscopy measurements
55 spectroscopy measurements
56 study
57 tin oxide
58 transport layer
59 ultraviolet photoelectron spectroscopy measurements
60 use
61 work function
62 schema:name Hole injection improvement using ultrathin Li-TFSI layer in organic light-emitting diodes
63 schema:pagination 961-965
64 schema:productId N2be633bea54b47a2ab62d391fcf3ac4b
65 N869975a263084d0c8dd70b26202c7ba3
66 schema:sameAs https://app.dimensions.ai/details/publication/pub.1142471563
67 https://doi.org/10.1007/s40042-021-00324-7
68 schema:sdDatePublished 2022-05-10T10:31
69 schema:sdLicense https://scigraph.springernature.com/explorer/license/
70 schema:sdPublisher N7eb2cab112b4430ebd7026c4da459bf1
71 schema:url https://doi.org/10.1007/s40042-021-00324-7
72 sgo:license sg:explorer/license/
73 sgo:sdDataset articles
74 rdf:type schema:ScholarlyArticle
75 N24ee000893d34758948a9d4ac501bea8 schema:volumeNumber 79
76 rdf:type schema:PublicationVolume
77 N2be633bea54b47a2ab62d391fcf3ac4b schema:name doi
78 schema:value 10.1007/s40042-021-00324-7
79 rdf:type schema:PropertyValue
80 N3b970c5738ba4caea953deea9f3b7603 rdf:first sg:person.01043071367.33
81 rdf:rest rdf:nil
82 N7ca93d0b98ea436cb5598a34054c5524 schema:issueNumber 10
83 rdf:type schema:PublicationIssue
84 N7eb2cab112b4430ebd7026c4da459bf1 schema:name Springer Nature - SN SciGraph project
85 rdf:type schema:Organization
86 N869975a263084d0c8dd70b26202c7ba3 schema:name dimensions_id
87 schema:value pub.1142471563
88 rdf:type schema:PropertyValue
89 Na760464375184b59b41f4c67b942f803 rdf:first sg:person.01110101660.49
90 rdf:rest Na929d0f77e8c4758af5baf2216a8cac1
91 Na929d0f77e8c4758af5baf2216a8cac1 rdf:first sg:person.01275230676.33
92 rdf:rest N3b970c5738ba4caea953deea9f3b7603
93 anzsrc-for:01 schema:inDefinedTermSet anzsrc-for:
94 schema:name Mathematical Sciences
95 rdf:type schema:DefinedTerm
96 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
97 schema:name Physical Sciences
98 rdf:type schema:DefinedTerm
99 sg:journal.1042000 schema:issn 0374-4884
100 1976-8524
101 schema:name Journal of the Korean Physical Society
102 schema:publisher Springer Nature
103 rdf:type schema:Periodical
104 sg:person.01043071367.33 schema:affiliation grid-institutes:grid.412010.6
105 schema:familyName Lee
106 schema:givenName Hyunbok
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01043071367.33
108 rdf:type schema:Person
109 sg:person.01110101660.49 schema:affiliation grid-institutes:grid.15444.30
110 schema:familyName Kim
111 schema:givenName Kiwoong
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01110101660.49
113 rdf:type schema:Person
114 sg:person.01275230676.33 schema:affiliation grid-institutes:grid.15444.30
115 schema:familyName Yi
116 schema:givenName Yeonjin
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01275230676.33
118 rdf:type schema:Person
119 sg:pub.10.1038/nmat2119 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051342000
120 https://doi.org/10.1038/nmat2119
121 rdf:type schema:CreativeWork
122 grid-institutes:grid.15444.30 schema:alternateName Department of Physics and van der Waals Materials Research Center, Yonsei University, 03722, Seoul, Republic of Korea
123 schema:name Department of Physics and van der Waals Materials Research Center, Yonsei University, 03722, Seoul, Republic of Korea
124 rdf:type schema:Organization
125 grid-institutes:grid.412010.6 schema:alternateName Department of Physics and Institute for Accelerator Science, Kangwon National University, 24341, Chuncheon, Republic of Korea
126 schema:name Department of Physics and Institute for Accelerator Science, Kangwon National University, 24341, Chuncheon, Republic of Korea
127 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...