Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying View Full Text


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Article Info

DATE

2019-03

AUTHORS

Woon-Seop Choi

ABSTRACT

Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system. More... »

PAGES

1-8

Journal

TITLE

Electronic Materials Letters

ISSUE

N/A

VOLUME

N/A

Author Affiliations

From Grant

  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s13391-018-00105-8

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    http://dx.doi.org/10.1007/s13391-018-00105-8

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