Development of large area nanostructured silicon-hydrogen alloy material with improved stability for solar cell application by argon dilution method View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-07

AUTHORS

Arka Dey, Mrinmay Das, Joydeep Datta, Rajkumar Jana, Joydeep Dhar, Sayantan Sil, Debasish Biswas, Chandan Banerjee, Partha Pratim Ray

ABSTRACT

Here we have presented the results of large area (30 × 30 cm2) silicon-hydrogen alloy material and solar cell by argon dilution method. As an alternative to hydrogen dilution, argon dilution method has been applied to develop single junction solar cell with appreciable stability. Optimization of deposition conditions revealed that 95% argon dilution gives a nanostructured material with improved transport property and less light induced degradation. The minority carrier diffusion length (Ld) and mobility-lifetime (μτ) product of the material with 95% argon dilution degrades least after light soaking. Also the density of states (DOS) below conduction level reveals that this material is less defective. Solar cell with this argon diluted material has been fabricated with all the layers deposited by argon dilution method. Finally we have compared the argon diluted solar cell results with the optimized hydrogen diluted solar cell. Light soaking study proves that it is possible to develop stable solar cell on large area by argon dilution method and that the degradation of argon diluted solar cell is less than that of hydrogen diluted one. More... »

PAGES

456-461

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s13391-016-4006-z

DOI

http://dx.doi.org/10.1007/s13391-016-4006-z

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https://app.dimensions.ai/details/publication/pub.1050583878


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