Samarium-induced enhancement of SiOx decomposition and Si nanocrystals formation View Full Text


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Article Info

DATE

2022-09-13

AUTHORS

Katerina V. Michailovska, Ivan Z. Indutnyi, Petro E. Shepeliavyi, Mykola V. Sopinskyy, Viktor A. Dan’ko, Zinoviia F. Tsybrii, Andrii S. Nikolenko

ABSTRACT

The effect of Sm on thermally stimulated decomposition of SiOx and the formation of silicon nanocrystals during high-temperature air annealing was studied by measuring the spectra of photoluminescence (PL), infrared (IR) reflection and transmission and Micro-Raman scattering (RS). The SiOx: Sm films were produced by thermal co-evaporation of silicon monoxide and metallic samarium powders in a vacuum onto polished c-Si and silica substrates. The Sm concentration varied from 0.8 to 2.0 wt. %. In the SiOx: Sm films annealed at 970 ºC, an intense PL band of silicon nanocrystals was found in the 850–900 nm region, the position and intensity of which depend on the samarium concentration. The formation of Si nanocrystals in those films is also confirmed by studying their Raman spectra. At the same time, no Si nanocrystals were found in undoped SiOx films annealed under similar conditions. The analysis of these spectra made it possible to determine the sizes of silicon nanocrystals: 3.7 nm from the PL spectra and 3.6 nm from the Raman spectra. A possible mechanism of thermally stimulated interaction of Sm atoms with the SiOx matrix is discussed. More... »

PAGES

1-8

References to SciGraph publications

  • 2010-02. Visible photoluminescence of selectively etched porous nc-Si-Siox structures in SEMICONDUCTORS
  • 2014-01-06. Silicon nanostructures for photonics and photovoltaics in NATURE NANOTECHNOLOGY
  • 2005-10. Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing in SEMICONDUCTORS
  • 2010-08-18. Raman studies of silicon nanocrystals embedded in silicon suboxide layers in SEMICONDUCTORS
  • 2002-01. Size evolution and photoluminescence of silicon nanocrystallites in evaporated SiOx thin films upon thermal processing in APPLIED PHYSICS A
  • 2014-06. Oxidation of a thin samarium film on iridium in TECHNICAL PHYSICS LETTERS
  • 2017-07-01. Optoelectronic effect of porous silicon surface treatment with samarium ions for different deposition times and characterizations in THE INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
  • 2019-03. Optical Properties and Kinetics of the Luminescence Decay of Sm3+ and Sm2+ Ions in Aluminoborosilicate Glasses in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2015-11-25. Size confinement of Si nanocrystals in multinanolayer structures in SCIENTIFIC REPORTS
  • 2016-12-07. Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2 Structures in NANOSCALE RESEARCH LETTERS
  • 2015-05-27. Formation of Nanocomposites by Oxidizing Annealing of SiOx and SiOx<Er,F> Films: Ellipsometry and FTIR Analysis in NANOSCALE RESEARCH LETTERS
  • 2012-03-16. Effect of erbium fluoride doping on the photoluminescence of SiOx films in SEMICONDUCTORS
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    http://scigraph.springernature.com/pub.10.1007/s13204-022-02617-0

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    http://dx.doi.org/10.1007/s13204-022-02617-0

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    https://app.dimensions.ai/details/publication/pub.1150964004


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