Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-04-24

AUTHORS

Iryna Levchenko, Vasyl Tomashyk, Iryna Stratiychuk, Galyna Malanych, Andrii Korchovyi, Serhii Kryvyi, Oleksandr Kolomys

ABSTRACT

The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical–mechanical polishing with the (NH4)2Cr2O7–HBr–CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7–HBr–ethylene glycol solutions produces the clean surface of the nanosize level (Ra < 0.5 nm). More... »

PAGES

949-953

References to SciGraph publications

  • 2010-08-21. Optical Properties of GaSb Nanofibers in NANOSCALE RESEARCH LETTERS
  • 2012-08-23. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads in JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY
  • 2017-05-18. Operation limitation of CMP in back-thinning process of InSb IRFPAs in OPTICAL AND QUANTUM ELECTRONICS
  • 1973-07. A contribution to etch polishing of GaAs in JOURNAL OF MATERIALS SCIENCE
  • 2011-03-30. Wet chemical etching of the (111)In and Sb planes of InSb substrates in INORGANIC MATERIALS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s13204-018-0788-7

    DOI

    http://dx.doi.org/10.1007/s13204-018-0788-7

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1103603161


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/03", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Chemical Sciences", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0306", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Physical Chemistry (incl. Structural)", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Levchenko", 
            "givenName": "Iryna", 
            "id": "sg:person.07503432701.11", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07503432701.11"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Tomashyk", 
            "givenName": "Vasyl", 
            "id": "sg:person.011516455323.68", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011516455323.68"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Stratiychuk", 
            "givenName": "Iryna", 
            "id": "sg:person.012471334701.14", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012471334701.14"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Malanych", 
            "givenName": "Galyna", 
            "id": "sg:person.010133263517.69", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010133263517.69"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Korchovyi", 
            "givenName": "Andrii", 
            "id": "sg:person.01000204665.00", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01000204665.00"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kryvyi", 
            "givenName": "Serhii", 
            "id": "sg:person.01151424643.72", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01151424643.72"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kolomys", 
            "givenName": "Oleksandr", 
            "id": "sg:person.01254107664.65", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01254107664.65"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1007/bf00756642", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1027444329", 
              "https://doi.org/10.1007/bf00756642"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s11082-017-1056-x", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1085443282", 
              "https://doi.org/10.1007/s11082-017-1056-x"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s11671-010-9739-2", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1041957435", 
              "https://doi.org/10.1007/s11671-010-9739-2"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1134/s0020168511040091", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1045981707", 
              "https://doi.org/10.1134/s0020168511040091"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s12206-012-0613-2", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1004759395", 
              "https://doi.org/10.1007/s12206-012-0613-2"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2018-04-24", 
        "datePublishedReg": "2018-04-24", 
        "description": "The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical\u2013mechanical polishing with the (NH4)2Cr2O7\u2013HBr\u2013CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57\u00a0\u00b5m/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7\u2013HBr\u2013ethylene glycol solutions produces the clean surface of the nanosize level (Ra\u2009<\u20090.5\u00a0nm).", 
        "genre": "article", 
        "id": "sg:pub.10.1007/s13204-018-0788-7", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1033811", 
            "issn": [
              "2190-5509", 
              "2190-5517"
            ], 
            "name": "Applied Nanoscience", 
            "publisher": "Springer Nature", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "5", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "8"
          }
        ], 
        "keywords": [
          "ultra-smooth surface", 
          "chemical mechanical polishing", 
          "nanosize level", 
          "HRXRD results", 
          "mechanical effects", 
          "clean surface", 
          "solvent concentration", 
          "glycol solution", 
          "GaAs", 
          "surface", 
          "InSb", 
          "solution saturation", 
          "organic solvents", 
          "polishing", 
          "InAs", 
          "semiconductors", 
          "organic solvent concentration", 
          "solution", 
          "AFM", 
          "GaSb", 
          "saturation", 
          "rate", 
          "solvent", 
          "treatment", 
          "formation", 
          "results", 
          "min", 
          "increase", 
          "concentration", 
          "levels", 
          "effect", 
          "decrease", 
          "RS", 
          "features", 
          "function", 
          "HBr"
        ], 
        "name": "Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface", 
        "pagination": "949-953", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1103603161"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/s13204-018-0788-7"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/s13204-018-0788-7", 
          "https://app.dimensions.ai/details/publication/pub.1103603161"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2022-11-24T21:02", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20221124/entities/gbq_results/article/article_754.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1007/s13204-018-0788-7"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s13204-018-0788-7'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s13204-018-0788-7'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s13204-018-0788-7'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s13204-018-0788-7'


     

    This table displays all metadata directly associated to this object as RDF triples.

    155 TRIPLES      21 PREDICATES      65 URIs      52 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/s13204-018-0788-7 schema:about anzsrc-for:03
    2 anzsrc-for:0306
    3 schema:author Nc6f9d9e9c8eb42f9a2c4c17be3a7435e
    4 schema:citation sg:pub.10.1007/bf00756642
    5 sg:pub.10.1007/s11082-017-1056-x
    6 sg:pub.10.1007/s11671-010-9739-2
    7 sg:pub.10.1007/s12206-012-0613-2
    8 sg:pub.10.1134/s0020168511040091
    9 schema:datePublished 2018-04-24
    10 schema:datePublishedReg 2018-04-24
    11 schema:description The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical–mechanical polishing with the (NH4)2Cr2O7–HBr–CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7–HBr–ethylene glycol solutions produces the clean surface of the nanosize level (Ra < 0.5 nm).
    12 schema:genre article
    13 schema:isAccessibleForFree false
    14 schema:isPartOf N2315a564bcd34a2d92111f0f537b14f1
    15 N490882c0c378472f8344eb06796f8672
    16 sg:journal.1033811
    17 schema:keywords AFM
    18 GaAs
    19 GaSb
    20 HBr
    21 HRXRD results
    22 InAs
    23 InSb
    24 RS
    25 chemical mechanical polishing
    26 clean surface
    27 concentration
    28 decrease
    29 effect
    30 features
    31 formation
    32 function
    33 glycol solution
    34 increase
    35 levels
    36 mechanical effects
    37 min
    38 nanosize level
    39 organic solvent concentration
    40 organic solvents
    41 polishing
    42 rate
    43 results
    44 saturation
    45 semiconductors
    46 solution
    47 solution saturation
    48 solvent
    49 solvent concentration
    50 surface
    51 treatment
    52 ultra-smooth surface
    53 schema:name Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface
    54 schema:pagination 949-953
    55 schema:productId N4f0fde7f678e4fc4b19f93115d04b82d
    56 N9aed0f8b06914f2ead817ce58efbd701
    57 schema:sameAs https://app.dimensions.ai/details/publication/pub.1103603161
    58 https://doi.org/10.1007/s13204-018-0788-7
    59 schema:sdDatePublished 2022-11-24T21:02
    60 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    61 schema:sdPublisher N0d1c0405660e47679f7e2070e6c98cf5
    62 schema:url https://doi.org/10.1007/s13204-018-0788-7
    63 sgo:license sg:explorer/license/
    64 sgo:sdDataset articles
    65 rdf:type schema:ScholarlyArticle
    66 N0d1c0405660e47679f7e2070e6c98cf5 schema:name Springer Nature - SN SciGraph project
    67 rdf:type schema:Organization
    68 N2315a564bcd34a2d92111f0f537b14f1 schema:issueNumber 5
    69 rdf:type schema:PublicationIssue
    70 N27f75ebc96d348bea2bec7971b6a1e36 rdf:first sg:person.012471334701.14
    71 rdf:rest N4c64a03c38c34a2fb4d623f47d485ecd
    72 N490882c0c378472f8344eb06796f8672 schema:volumeNumber 8
    73 rdf:type schema:PublicationVolume
    74 N4c64a03c38c34a2fb4d623f47d485ecd rdf:first sg:person.010133263517.69
    75 rdf:rest Ne9ddbb61a9b54cac83a61c6544f11c80
    76 N4f0fde7f678e4fc4b19f93115d04b82d schema:name doi
    77 schema:value 10.1007/s13204-018-0788-7
    78 rdf:type schema:PropertyValue
    79 N90ae9b39243b4df7979b6e1a0b413d9a rdf:first sg:person.01254107664.65
    80 rdf:rest rdf:nil
    81 N9aed0f8b06914f2ead817ce58efbd701 schema:name dimensions_id
    82 schema:value pub.1103603161
    83 rdf:type schema:PropertyValue
    84 Nb2092efb026c40579969fa9a80151376 rdf:first sg:person.01151424643.72
    85 rdf:rest N90ae9b39243b4df7979b6e1a0b413d9a
    86 Nb534b285ad7b4c518de215d8988f72ea rdf:first sg:person.011516455323.68
    87 rdf:rest N27f75ebc96d348bea2bec7971b6a1e36
    88 Nc6f9d9e9c8eb42f9a2c4c17be3a7435e rdf:first sg:person.07503432701.11
    89 rdf:rest Nb534b285ad7b4c518de215d8988f72ea
    90 Ne9ddbb61a9b54cac83a61c6544f11c80 rdf:first sg:person.01000204665.00
    91 rdf:rest Nb2092efb026c40579969fa9a80151376
    92 anzsrc-for:03 schema:inDefinedTermSet anzsrc-for:
    93 schema:name Chemical Sciences
    94 rdf:type schema:DefinedTerm
    95 anzsrc-for:0306 schema:inDefinedTermSet anzsrc-for:
    96 schema:name Physical Chemistry (incl. Structural)
    97 rdf:type schema:DefinedTerm
    98 sg:journal.1033811 schema:issn 2190-5509
    99 2190-5517
    100 schema:name Applied Nanoscience
    101 schema:publisher Springer Nature
    102 rdf:type schema:Periodical
    103 sg:person.01000204665.00 schema:affiliation grid-institutes:grid.466789.2
    104 schema:familyName Korchovyi
    105 schema:givenName Andrii
    106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01000204665.00
    107 rdf:type schema:Person
    108 sg:person.010133263517.69 schema:affiliation grid-institutes:grid.466789.2
    109 schema:familyName Malanych
    110 schema:givenName Galyna
    111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010133263517.69
    112 rdf:type schema:Person
    113 sg:person.01151424643.72 schema:affiliation grid-institutes:grid.466789.2
    114 schema:familyName Kryvyi
    115 schema:givenName Serhii
    116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01151424643.72
    117 rdf:type schema:Person
    118 sg:person.011516455323.68 schema:affiliation grid-institutes:grid.466789.2
    119 schema:familyName Tomashyk
    120 schema:givenName Vasyl
    121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011516455323.68
    122 rdf:type schema:Person
    123 sg:person.012471334701.14 schema:affiliation grid-institutes:grid.466789.2
    124 schema:familyName Stratiychuk
    125 schema:givenName Iryna
    126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012471334701.14
    127 rdf:type schema:Person
    128 sg:person.01254107664.65 schema:affiliation grid-institutes:grid.466789.2
    129 schema:familyName Kolomys
    130 schema:givenName Oleksandr
    131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01254107664.65
    132 rdf:type schema:Person
    133 sg:person.07503432701.11 schema:affiliation grid-institutes:grid.466789.2
    134 schema:familyName Levchenko
    135 schema:givenName Iryna
    136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07503432701.11
    137 rdf:type schema:Person
    138 sg:pub.10.1007/bf00756642 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027444329
    139 https://doi.org/10.1007/bf00756642
    140 rdf:type schema:CreativeWork
    141 sg:pub.10.1007/s11082-017-1056-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1085443282
    142 https://doi.org/10.1007/s11082-017-1056-x
    143 rdf:type schema:CreativeWork
    144 sg:pub.10.1007/s11671-010-9739-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041957435
    145 https://doi.org/10.1007/s11671-010-9739-2
    146 rdf:type schema:CreativeWork
    147 sg:pub.10.1007/s12206-012-0613-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004759395
    148 https://doi.org/10.1007/s12206-012-0613-2
    149 rdf:type schema:CreativeWork
    150 sg:pub.10.1134/s0020168511040091 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045981707
    151 https://doi.org/10.1134/s0020168511040091
    152 rdf:type schema:CreativeWork
    153 grid-institutes:grid.466789.2 schema:alternateName V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine
    154 schema:name V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine
    155 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...