Fabrication of large area hexagonal boron nitride thin films for bendable capacitors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-08

AUTHORS

Ning Guo, Jinquan Wei, Yi Jia, Huanhuan Sun, Yuhang Wang, Kehan Zhao, Xiaolan Shi, Liuwan Zhang, Xinming Li, Anyuan Cao, Hongwei Zhu, Kunlin Wang, Dehai Wu

ABSTRACT

Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of ∼9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 μF/cm2, which is one order of magnitude higher than the calculated value. More... »

PAGES

602-610

References to SciGraph publications

Journal

TITLE

Nano Research

ISSUE

8

VOLUME

6

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s12274-013-0336-4

DOI

http://dx.doi.org/10.1007/s12274-013-0336-4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035705051


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36 schema:description Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of ∼9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 μF/cm2, which is one order of magnitude higher than the calculated value.
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