Reliability tests and improvements for Sc-contacted n-type carbon nanotube transistors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-07

AUTHORS

Shibo Liang, Zhiyong Zhang, Tian Pei, Ruoming Li, Yan Li, Lianmao Peng

ABSTRACT

Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure have been fabricated, and their stability in air were investigated. It was shown that oxygen and water molecules may affect both the nanotube channel and Sc/nanotube contacts, leading to deteriorated contact quality and device performance. These negative effects associated with the instability of n-type carbon nanotube FETs can be eliminated through passivating the CNT devices by a thin layer of atomic-layer-deposition grown Al2O3 insulator. After passivation, the n-type carbon nanotube FETs are shown to exhibit excellent atmosphere stability even after being tested and exposed to air for over 146 days, and then much smoother output characteristics and reduced gate voltage hysteresis from 1 to 0.1 V were demonstrated when compared with devices without passivation. Lasting power-on tests were also performed on the passivated CNT FETs under large gate stress and high drain current in air for at least 10 h, revealing null device degradation and sometimes even improved performance. These results promise that passivated CNT devices are reliable in air and may be used in practical applications. More... »

PAGES

535-545

References to SciGraph publications

Journal

TITLE

Nano Research

ISSUE

7

VOLUME

6

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s12274-013-0330-x

DOI

http://dx.doi.org/10.1007/s12274-013-0330-x

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https://app.dimensions.ai/details/publication/pub.1029674342


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45 schema:description Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure have been fabricated, and their stability in air were investigated. It was shown that oxygen and water molecules may affect both the nanotube channel and Sc/nanotube contacts, leading to deteriorated contact quality and device performance. These negative effects associated with the instability of n-type carbon nanotube FETs can be eliminated through passivating the CNT devices by a thin layer of atomic-layer-deposition grown Al2O3 insulator. After passivation, the n-type carbon nanotube FETs are shown to exhibit excellent atmosphere stability even after being tested and exposed to air for over 146 days, and then much smoother output characteristics and reduced gate voltage hysteresis from 1 to 0.1 V were demonstrated when compared with devices without passivation. Lasting power-on tests were also performed on the passivated CNT FETs under large gate stress and high drain current in air for at least 10 h, revealing null device degradation and sometimes even improved performance. These results promise that passivated CNT devices are reliable in air and may be used in practical applications.
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