Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 View Full Text


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Article Info

DATE

2012-01

AUTHORS

Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Valery Afanas’ev, André Stesmans

ABSTRACT

The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS2, the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS2. More... »

PAGES

43-48

References to SciGraph publications

  • 2007-03. The rise of graphene in NATURE MATERIALS
  • 2011-03. Single-layer MoS2 transistors in NATURE NANOTECHNOLOGY
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s12274-011-0183-0

    DOI

    http://dx.doi.org/10.1007/s12274-011-0183-0

    DIMENSIONS

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