Investigation of the effects of spin injection of charge carriers from a ferromagnetic Ni(Co)/GaAs Schottky contact in quantum well heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-02

AUTHORS

M. V. Dorokhin, S. V. Zaitsev, N. V. Baidus’, Yu. A. Danilov, P. B. Demina, B. N. Zvonkov, V. D. Kulakovskii, E. A. Uskova

ABSTRACT

The circularly polarized electroluminescence of quantum-confined InGaAs/GaAs heterostructures with a ferromagnetic Ni(Co)/GaAs Schottky contact has been investigated. It is shown that the high degree of circular polarization (to 42%) is due to the injection of spin-polarized holes from the ferromagnetic metal. The dependence of the spin injection efficiency on the type of the metal/GaAs interface and the quantum well depth has been analyzed. The spin coherence length of holes was found to be ≈80 nm at 1.5 K. More... »

PAGES

163-166

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11954-008-2007-2

DOI

http://dx.doi.org/10.1007/s11954-008-2007-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1085906662


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