Epitaxial growth of SrRuO3 thin films by RF sputtering and study of surface morphology View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-12

AUTHORS

M. K. R. Khan, M. Ito, M. Ishida

ABSTRACT

We report on the epitaxial growth of SrRuO3 (SRO) thin films on Pt (111)/γ-Al2O3 (111) nSi (111) substrates. The grown thin films are crystalline and epitaxial as suggested by RHEED and XRD experiments. With the use of γ-Al2O3 (001)/nSi (001) and γ-Al2O3 (111)/nSi (111) substrates, crystalline but not epitaxial films have grown successfully. This result implies that lattice mismatch between nSi and SRO prevents the epitaxial growth of SRO film directly on nSi. However, the buffer Pt (111) layer mitigates lattice mismatch that provides to grow epitaxial film on nSi of quality. Morphological study shows a good surface with moderate roughness. Film grown at 700°C is smoother than the film grown at 750°C, but the variation of temperature does not affect significantly on the epitaxial nature of the films. More... »

PAGES

387-393

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11706-010-0098-9

DOI

http://dx.doi.org/10.1007/s11706-010-0098-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019824125


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144 JST-CREST, 4-1-8-Honcho, Kawaguchi, Saitama, Japan
145 Venture Business Laboratory, Toyohashi University of Technology, Tempakucho, Toyohashi, 441-8580, Aichi, Japan
146 rdf:type schema:Organization
 




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