Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2009-11-14

AUTHORS

GE Cirlin, AD Bouravleuv, IP Soshnikov, Yu B Samsonenko, VG Dubrovskii, EM Arakcheeva, EM Tanklevskaya, P Werner

ABSTRACT

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. More... »

PAGES

360-363

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11671-009-9488-2

DOI

http://dx.doi.org/10.1007/s11671-009-9488-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035456735

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/20672038


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/10", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Technology", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/1007", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Nanotechnology", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103, St.-Petersburg, Russia", 
            "St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia", 
            "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cirlin", 
        "givenName": "GE", 
        "id": "sg:person.014222264064.92", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014222264064.92"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia", 
            "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bouravleuv", 
        "givenName": "AD", 
        "id": "sg:person.012577710235.67", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia", 
            "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Soshnikov", 
        "givenName": "IP", 
        "id": "sg:person.011074606275.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011074606275.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103, St.-Petersburg, Russia", 
            "St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia", 
            "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonenko", 
        "givenName": "Yu B", 
        "id": "sg:person.016561315174.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016561315174.96"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia", 
            "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dubrovskii", 
        "givenName": "VG", 
        "id": "sg:person.0652004760.89", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0652004760.89"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Arakcheeva", 
        "givenName": "EM", 
        "id": "sg:person.01126551062.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126551062.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tanklevskaya", 
        "givenName": "EM", 
        "id": "sg:person.01174664262.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01174664262.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Max Planck Institute for Microstructure Physics, Weinberg 2, 06120, Halle/Saale, Germany", 
          "id": "http://www.grid.ac/institutes/grid.450270.4", 
          "name": [
            "Max Planck Institute for Microstructure Physics, Weinberg 2, 06120, Halle/Saale, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Werner", 
        "givenName": "P", 
        "id": "sg:person.0703230070.47", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0703230070.47"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782608120130", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020324487", 
          "https://doi.org/10.1134/s1063782608120130"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2009-11-14", 
    "datePublishedReg": "2009-11-14", 
    "description": " We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 \u00b0C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 \u00b0C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s11671-009-9488-2", 
    "inLanguage": "en", 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1037280", 
        "issn": [
          "1931-7573", 
          "1556-276X"
        ], 
        "name": "Nanoscale Research Letters", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "5"
      }
    ], 
    "keywords": [
      "substrate temperature", 
      "conversion efficiency", 
      "GaAs nanowire arrays", 
      "photovoltaic properties", 
      "different substrate temperatures", 
      "molecular beam epitaxy growth", 
      "nanowire arrays", 
      "NW arrays", 
      "fill factor", 
      "GaAs p", 
      "epitaxy growth", 
      "temperature", 
      "best sample", 
      "substrate", 
      "efficiency", 
      "array", 
      "properties", 
      "range", 
      "dependence", 
      "samples", 
      "types", 
      "maximum", 
      "growth", 
      "factors", 
      "beam epitaxy growth", 
      "Au-assisted GaAs p", 
      "type-doped NW arrays"
    ], 
    "name": "Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate", 
    "pagination": "360-363", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1035456735"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11671-009-9488-2"
        ]
      }, 
      {
        "name": "pubmed_id", 
        "type": "PropertyValue", 
        "value": [
          "20672038"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11671-009-9488-2", 
      "https://app.dimensions.ai/details/publication/pub.1035456735"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:13", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_497.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s11671-009-9488-2"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

163 TRIPLES      22 PREDICATES      58 URIs      45 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11671-009-9488-2 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:09
4 anzsrc-for:0912
5 anzsrc-for:10
6 anzsrc-for:1007
7 schema:author N9228f0d16a3445868ba26427aaf6ef89
8 schema:citation sg:pub.10.1134/s1063782608120130
9 schema:datePublished 2009-11-14
10 schema:datePublishedReg 2009-11-14
11 schema:description We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.
12 schema:genre article
13 schema:inLanguage en
14 schema:isAccessibleForFree true
15 schema:isPartOf N2cbc94e38100441f97d72d49c5ea60ab
16 Nbba7876b2e414958ab79070d468b7deb
17 sg:journal.1037280
18 schema:keywords Au-assisted GaAs p
19 GaAs nanowire arrays
20 GaAs p
21 NW arrays
22 array
23 beam epitaxy growth
24 best sample
25 conversion efficiency
26 dependence
27 different substrate temperatures
28 efficiency
29 epitaxy growth
30 factors
31 fill factor
32 growth
33 maximum
34 molecular beam epitaxy growth
35 nanowire arrays
36 photovoltaic properties
37 properties
38 range
39 samples
40 substrate
41 substrate temperature
42 temperature
43 type-doped NW arrays
44 types
45 schema:name Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
46 schema:pagination 360-363
47 schema:productId N2d5ec3c4213f44408775f38a4d1e0d02
48 Na9da1f4a0e7640cdb7767ef505b71d16
49 Nabfd4ba965d94cc6b930dd3f138c75f5
50 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035456735
51 https://doi.org/10.1007/s11671-009-9488-2
52 schema:sdDatePublished 2021-11-01T18:13
53 schema:sdLicense https://scigraph.springernature.com/explorer/license/
54 schema:sdPublisher Nab09392762a343fab375a780a617eeaf
55 schema:url https://doi.org/10.1007/s11671-009-9488-2
56 sgo:license sg:explorer/license/
57 sgo:sdDataset articles
58 rdf:type schema:ScholarlyArticle
59 N2cbc94e38100441f97d72d49c5ea60ab schema:issueNumber 2
60 rdf:type schema:PublicationIssue
61 N2d5ec3c4213f44408775f38a4d1e0d02 schema:name dimensions_id
62 schema:value pub.1035456735
63 rdf:type schema:PropertyValue
64 N457e6da3f4644a0f973c0236e78a0228 rdf:first sg:person.011074606275.20
65 rdf:rest Nd8680ccc017d4dc68f2ef9ae8a50bcfb
66 N7ef85379908a43f3b8c91139b08e1af9 rdf:first sg:person.01126551062.20
67 rdf:rest Na505751d9f1c4770b8c1167d6a8d76eb
68 N8b322eece9a540048b1e03cc52904879 rdf:first sg:person.0652004760.89
69 rdf:rest N7ef85379908a43f3b8c91139b08e1af9
70 N9228f0d16a3445868ba26427aaf6ef89 rdf:first sg:person.014222264064.92
71 rdf:rest N9ace696e806146698910b4d12db3731a
72 N9ace696e806146698910b4d12db3731a rdf:first sg:person.012577710235.67
73 rdf:rest N457e6da3f4644a0f973c0236e78a0228
74 Na505751d9f1c4770b8c1167d6a8d76eb rdf:first sg:person.01174664262.33
75 rdf:rest Nbf56cf8f66c148e9be2aaee28b91961e
76 Na9da1f4a0e7640cdb7767ef505b71d16 schema:name doi
77 schema:value 10.1007/s11671-009-9488-2
78 rdf:type schema:PropertyValue
79 Nab09392762a343fab375a780a617eeaf schema:name Springer Nature - SN SciGraph project
80 rdf:type schema:Organization
81 Nabfd4ba965d94cc6b930dd3f138c75f5 schema:name pubmed_id
82 schema:value 20672038
83 rdf:type schema:PropertyValue
84 Nbba7876b2e414958ab79070d468b7deb schema:volumeNumber 5
85 rdf:type schema:PublicationVolume
86 Nbf56cf8f66c148e9be2aaee28b91961e rdf:first sg:person.0703230070.47
87 rdf:rest rdf:nil
88 Nd8680ccc017d4dc68f2ef9ae8a50bcfb rdf:first sg:person.016561315174.96
89 rdf:rest N8b322eece9a540048b1e03cc52904879
90 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
91 schema:name Physical Sciences
92 rdf:type schema:DefinedTerm
93 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
94 schema:name Condensed Matter Physics
95 rdf:type schema:DefinedTerm
96 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
97 schema:name Engineering
98 rdf:type schema:DefinedTerm
99 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
100 schema:name Materials Engineering
101 rdf:type schema:DefinedTerm
102 anzsrc-for:10 schema:inDefinedTermSet anzsrc-for:
103 schema:name Technology
104 rdf:type schema:DefinedTerm
105 anzsrc-for:1007 schema:inDefinedTermSet anzsrc-for:
106 schema:name Nanotechnology
107 rdf:type schema:DefinedTerm
108 sg:journal.1037280 schema:issn 1556-276X
109 1931-7573
110 schema:name Nanoscale Research Letters
111 schema:publisher Springer Nature
112 rdf:type schema:Periodical
113 sg:person.011074606275.20 schema:affiliation grid-institutes:grid.423485.c
114 schema:familyName Soshnikov
115 schema:givenName IP
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011074606275.20
117 rdf:type schema:Person
118 sg:person.01126551062.20 schema:affiliation grid-institutes:grid.423485.c
119 schema:familyName Arakcheeva
120 schema:givenName EM
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126551062.20
122 rdf:type schema:Person
123 sg:person.01174664262.33 schema:affiliation grid-institutes:grid.423485.c
124 schema:familyName Tanklevskaya
125 schema:givenName EM
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01174664262.33
127 rdf:type schema:Person
128 sg:person.012577710235.67 schema:affiliation grid-institutes:grid.423485.c
129 schema:familyName Bouravleuv
130 schema:givenName AD
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67
132 rdf:type schema:Person
133 sg:person.014222264064.92 schema:affiliation grid-institutes:grid.423485.c
134 schema:familyName Cirlin
135 schema:givenName GE
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014222264064.92
137 rdf:type schema:Person
138 sg:person.016561315174.96 schema:affiliation grid-institutes:grid.423485.c
139 schema:familyName Samsonenko
140 schema:givenName Yu B
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016561315174.96
142 rdf:type schema:Person
143 sg:person.0652004760.89 schema:affiliation grid-institutes:grid.423485.c
144 schema:familyName Dubrovskii
145 schema:givenName VG
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0652004760.89
147 rdf:type schema:Person
148 sg:person.0703230070.47 schema:affiliation grid-institutes:grid.450270.4
149 schema:familyName Werner
150 schema:givenName P
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0703230070.47
152 rdf:type schema:Person
153 sg:pub.10.1134/s1063782608120130 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020324487
154 https://doi.org/10.1134/s1063782608120130
155 rdf:type schema:CreativeWork
156 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia
157 schema:name Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103, St.-Petersburg, Russia
158 Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia
159 St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia
160 rdf:type schema:Organization
161 grid-institutes:grid.450270.4 schema:alternateName Max Planck Institute for Microstructure Physics, Weinberg 2, 06120, Halle/Saale, Germany
162 schema:name Max Planck Institute for Microstructure Physics, Weinberg 2, 06120, Halle/Saale, Germany
163 rdf:type schema:Organization
 




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