A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping View Full Text


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Article Info

DATE

2009-11-08

AUTHORS

PratyushDas Kanungo, Reinhard Kögler, Peter Werner, Ulrich Gösele, Wolfgang Skorupa

ABSTRACT

We demonstrate a novel method to fabricate an axial p-n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires. More... »

PAGES

243-246

References to SciGraph publications

  • 1991-11. Boron and antimony codiffusion in silicon in JOURNAL OF MATERIALS RESEARCH
  • 1988-01. A systematic analysis of defects in ion-implanted silicon in APPLIED PHYSICS A
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s11671-009-9472-x

    DOI

    http://dx.doi.org/10.1007/s11671-009-9472-x

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1001070008

    PUBMED

    https://www.ncbi.nlm.nih.gov/pubmed/20651924


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    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Engineering", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Materials Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany", 
              "id": "http://www.grid.ac/institutes/grid.450270.4", 
              "name": [
                "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kanungo", 
            "givenName": "PratyushDas", 
            "id": "sg:person.016240112777.85", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016240112777.85"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Forschungszentrum Dresden, Rossendorf, FWIM, 01314, Dresden, Germany", 
              "id": "http://www.grid.ac/institutes/grid.40602.30", 
              "name": [
                "Forschungszentrum Dresden, Rossendorf, FWIM, 01314, Dresden, Germany"
              ], 
              "type": "Organization"
            }, 
            "familyName": "K\u00f6gler", 
            "givenName": "Reinhard", 
            "id": "sg:person.013214455660.90", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013214455660.90"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany", 
              "id": "http://www.grid.ac/institutes/grid.450270.4", 
              "name": [
                "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Werner", 
            "givenName": "Peter", 
            "id": "sg:person.0703230070.47", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0703230070.47"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany", 
              "id": "http://www.grid.ac/institutes/grid.450270.4", 
              "name": [
                "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
              ], 
              "type": "Organization"
            }, 
            "familyName": "G\u00f6sele", 
            "givenName": "Ulrich", 
            "id": "sg:person.01135264674.11", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01135264674.11"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Forschungszentrum Dresden, Rossendorf, FWIM, 01314, Dresden, Germany", 
              "id": "http://www.grid.ac/institutes/grid.40602.30", 
              "name": [
                "Forschungszentrum Dresden, Rossendorf, FWIM, 01314, Dresden, Germany"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Skorupa", 
            "givenName": "Wolfgang", 
            "id": "sg:person.01315205106.43", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01315205106.43"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1557/jmr.1991.2353", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1049836499", 
              "https://doi.org/10.1557/jmr.1991.2353"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/bf00618760", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1009229373", 
              "https://doi.org/10.1007/bf00618760"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2009-11-08", 
        "datePublishedReg": "2009-11-08", 
        "description": " We demonstrate a novel method to fabricate an axial p-n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 \u00d7 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.", 
        "genre": "article", 
        "id": "sg:pub.10.1007/s11671-009-9472-x", 
        "inLanguage": "en", 
        "isAccessibleForFree": true, 
        "isPartOf": [
          {
            "id": "sg:journal.1037280", 
            "issn": [
              "1931-7573", 
              "1556-276X"
            ], 
            "name": "Nanoscale Research Letters", 
            "publisher": "Springer Nature", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "1", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "5"
          }
        ], 
        "keywords": [
          "situ doping", 
          "silicon nanowire p", 
          "vertical silicon nanowires", 
          "excellent diode characteristics", 
          "ion implantation", 
          "ideality factor", 
          "silicon nanowires", 
          "nanowire p", 
          "nanowires", 
          "carrier recombination", 
          "diode characteristics", 
          "native oxide", 
          "electrical measurements", 
          "novel method", 
          "doping", 
          "surface states", 
          "molecular beam", 
          "uniform concentration", 
          "oxide", 
          "boron", 
          "recombination", 
          "junction", 
          "situ", 
          "beam", 
          "method", 
          "upper half", 
          "implantation", 
          "measurements", 
          "lower half", 
          "characteristics", 
          "concentration", 
          "phosphorus", 
          "values", 
          "combination", 
          "rate", 
          "factors", 
          "state", 
          "high rate", 
          "half", 
          "short vertical silicon nanowires"
        ], 
        "name": "A Novel Method to Fabricate Silicon Nanowire p\u2013n Junctions by a Combination of Ion Implantation and in-situ Doping", 
        "pagination": "243-246", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1001070008"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/s11671-009-9472-x"
            ]
          }, 
          {
            "name": "pubmed_id", 
            "type": "PropertyValue", 
            "value": [
              "20651924"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/s11671-009-9472-x", 
          "https://app.dimensions.ai/details/publication/pub.1001070008"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2021-11-01T18:14", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_501.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1007/s11671-009-9472-x"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11671-009-9472-x'

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    This table displays all metadata directly associated to this object as RDF triples.

    141 TRIPLES      22 PREDICATES      68 URIs      58 LITERALS      7 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/s11671-009-9472-x schema:about anzsrc-for:09
    2 anzsrc-for:0912
    3 schema:author N9bf2aedfd96c43f8a477c487f154446f
    4 schema:citation sg:pub.10.1007/bf00618760
    5 sg:pub.10.1557/jmr.1991.2353
    6 schema:datePublished 2009-11-08
    7 schema:datePublishedReg 2009-11-08
    8 schema:description We demonstrate a novel method to fabricate an axial p-n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.
    9 schema:genre article
    10 schema:inLanguage en
    11 schema:isAccessibleForFree true
    12 schema:isPartOf N1148d98004a74cb5bd891d84d72c1749
    13 Nc8af81c4901c4f2e9526f4c1b99f3320
    14 sg:journal.1037280
    15 schema:keywords beam
    16 boron
    17 carrier recombination
    18 characteristics
    19 combination
    20 concentration
    21 diode characteristics
    22 doping
    23 electrical measurements
    24 excellent diode characteristics
    25 factors
    26 half
    27 high rate
    28 ideality factor
    29 implantation
    30 ion implantation
    31 junction
    32 lower half
    33 measurements
    34 method
    35 molecular beam
    36 nanowire p
    37 nanowires
    38 native oxide
    39 novel method
    40 oxide
    41 phosphorus
    42 rate
    43 recombination
    44 short vertical silicon nanowires
    45 silicon nanowire p
    46 silicon nanowires
    47 situ
    48 situ doping
    49 state
    50 surface states
    51 uniform concentration
    52 upper half
    53 values
    54 vertical silicon nanowires
    55 schema:name A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping
    56 schema:pagination 243-246
    57 schema:productId N3ee200e6c23b4511b0b122fbd588a55b
    58 N5f5c284a14c8470092a1360e92f682c5
    59 Na3ae3acf1b6e4368bf328b1f0e4472f9
    60 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001070008
    61 https://doi.org/10.1007/s11671-009-9472-x
    62 schema:sdDatePublished 2021-11-01T18:14
    63 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    64 schema:sdPublisher N676ad405ee854c3a9a8dc0eafbe6366c
    65 schema:url https://doi.org/10.1007/s11671-009-9472-x
    66 sgo:license sg:explorer/license/
    67 sgo:sdDataset articles
    68 rdf:type schema:ScholarlyArticle
    69 N1148d98004a74cb5bd891d84d72c1749 schema:issueNumber 1
    70 rdf:type schema:PublicationIssue
    71 N3ee200e6c23b4511b0b122fbd588a55b schema:name pubmed_id
    72 schema:value 20651924
    73 rdf:type schema:PropertyValue
    74 N5f5c284a14c8470092a1360e92f682c5 schema:name doi
    75 schema:value 10.1007/s11671-009-9472-x
    76 rdf:type schema:PropertyValue
    77 N676ad405ee854c3a9a8dc0eafbe6366c schema:name Springer Nature - SN SciGraph project
    78 rdf:type schema:Organization
    79 N6cf4abb1c2d84af6a0041225a4a12751 rdf:first sg:person.0703230070.47
    80 rdf:rest N8e4c40b79cff43da8d3ad3d423b4733e
    81 N8e4c40b79cff43da8d3ad3d423b4733e rdf:first sg:person.01135264674.11
    82 rdf:rest Nb3e374c6438c4003a59fdca563173cd2
    83 N9bf2aedfd96c43f8a477c487f154446f rdf:first sg:person.016240112777.85
    84 rdf:rest Nd2b25fdc49644e12bad9d741a9fbf84b
    85 Na3ae3acf1b6e4368bf328b1f0e4472f9 schema:name dimensions_id
    86 schema:value pub.1001070008
    87 rdf:type schema:PropertyValue
    88 Nb3e374c6438c4003a59fdca563173cd2 rdf:first sg:person.01315205106.43
    89 rdf:rest rdf:nil
    90 Nc8af81c4901c4f2e9526f4c1b99f3320 schema:volumeNumber 5
    91 rdf:type schema:PublicationVolume
    92 Nd2b25fdc49644e12bad9d741a9fbf84b rdf:first sg:person.013214455660.90
    93 rdf:rest N6cf4abb1c2d84af6a0041225a4a12751
    94 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
    95 schema:name Engineering
    96 rdf:type schema:DefinedTerm
    97 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
    98 schema:name Materials Engineering
    99 rdf:type schema:DefinedTerm
    100 sg:journal.1037280 schema:issn 1556-276X
    101 1931-7573
    102 schema:name Nanoscale Research Letters
    103 schema:publisher Springer Nature
    104 rdf:type schema:Periodical
    105 sg:person.01135264674.11 schema:affiliation grid-institutes:grid.450270.4
    106 schema:familyName Gösele
    107 schema:givenName Ulrich
    108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01135264674.11
    109 rdf:type schema:Person
    110 sg:person.01315205106.43 schema:affiliation grid-institutes:grid.40602.30
    111 schema:familyName Skorupa
    112 schema:givenName Wolfgang
    113 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01315205106.43
    114 rdf:type schema:Person
    115 sg:person.013214455660.90 schema:affiliation grid-institutes:grid.40602.30
    116 schema:familyName Kögler
    117 schema:givenName Reinhard
    118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013214455660.90
    119 rdf:type schema:Person
    120 sg:person.016240112777.85 schema:affiliation grid-institutes:grid.450270.4
    121 schema:familyName Kanungo
    122 schema:givenName PratyushDas
    123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016240112777.85
    124 rdf:type schema:Person
    125 sg:person.0703230070.47 schema:affiliation grid-institutes:grid.450270.4
    126 schema:familyName Werner
    127 schema:givenName Peter
    128 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0703230070.47
    129 rdf:type schema:Person
    130 sg:pub.10.1007/bf00618760 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009229373
    131 https://doi.org/10.1007/bf00618760
    132 rdf:type schema:CreativeWork
    133 sg:pub.10.1557/jmr.1991.2353 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049836499
    134 https://doi.org/10.1557/jmr.1991.2353
    135 rdf:type schema:CreativeWork
    136 grid-institutes:grid.40602.30 schema:alternateName Forschungszentrum Dresden, Rossendorf, FWIM, 01314, Dresden, Germany
    137 schema:name Forschungszentrum Dresden, Rossendorf, FWIM, 01314, Dresden, Germany
    138 rdf:type schema:Organization
    139 grid-institutes:grid.450270.4 schema:alternateName Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
    140 schema:name Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
    141 rdf:type schema:Organization
     




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