Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2006-08-01

AUTHORS

V.G. Talalaev, G.E. Cirlin, A.A. Tonkikh, N.D. Zakharov, P. Werner, U. Gösele, J.W. Tomm, T. Elsaesser

ABSTRACT

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm. More... »

PAGES

137

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11671-006-9004-x

DOI

http://dx.doi.org/10.1007/s11671-006-9004-x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038783983


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