Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-05

AUTHORS

A. F. Tsatsul’Nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maximov, A.Yu Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop’Ev, Zh. I. Alferov, I. A. Kozin, M. V. Belousov, I. P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, D. Gerthsen

ABSTRACT

Structural and optical properties of structures with nanoscale InAs islands obtained by submonolayer deposition and embedded in an AlxGa1−xAs matrix is investigated. Deposition of several planes of InAs insertions results in formation of arrays of vertically correlated islands. The lateral size of the islands in a column is about 10 nm. Lasing via the ground states of the islands without external optical confinement is demonstrated. More... »

PAGES

537-541

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-999-0108-9

DOI

http://dx.doi.org/10.1007/s11664-999-0108-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035197292


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