Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-03

AUTHORS

Katsunori Yanashima, Shigeki Hashimoto, Tomonori Hino, Kenji Funato, Toshimasa Kobayashi, Kaori Naganuma, Tsuyoshi Tojyo, Takeharu Asano, Tsunenori Asatsuma, Takao Miyajima, Masao Ikeda

ABSTRACT

We report our new raised-pressure metalorganic chemical vapor deposition (RP-MOCVD) technique and the room-temperature continuous-wave (cw) operation of GaN-based laser diodes grown using this technique. We have found that both the defect density as measured by etch-pit density and optical pumping threshold-powder density decreases as the growth pressure is increased beyond 1 atm. We fabricated GaN-based laser diodes and achieved lasing under cw conditions at 20°C. The threshold current density was 3.5 kA/cm2 and the operation voltage at threshold was 16.8 V. More... »

PAGES

287-289

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-999-0028-8

DOI

http://dx.doi.org/10.1007/s11664-999-0028-8

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039894284


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