GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-04

AUTHORS

A. E. Nikolaev, S. V. Rendakova, I. P. Nikitina, K. V. Vassilevski, V. A. Dmitriev

ABSTRACT

6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epitaxial layers grown on 6H-SiC wafers were used as substrates for GaN HVPE growth. The GaN layers exhibit high crystal quality which was determined by x-ray diffraction. The full width at a half maximum (FWHM) for the ω-scan rocking curve for (0002) GaN reflection was ∼120 arcsec. The photoluminescence spectra for these films were dominated by band-edge emission. The FWHM of the edge PL peak at 361 nm was about 5 nm (80K). More... »

PAGES

288-291

References to SciGraph publications

  • 1992. Liquid-Phase Epitaxy of Silicon Carbide at Temperatures of 1100°-1200°C in AMORPHOUS AND CRYSTALLINE SILICON CARBIDE III
  • 1996. Fabrication of GaN mesa structures in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s11664-998-0401-z

    DOI

    http://dx.doi.org/10.1007/s11664-998-0401-z

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1005675092


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    JSON-LD is the canonical representation for SciGraph data.

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    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Engineering", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Materials Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Crystal Growth Research Center, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/None", 
              "name": [
                "Crystal Growth Research Center, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Nikolaev", 
            "givenName": "A. E.", 
            "id": "sg:person.010050311505.33", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Crystal Growth Research Center, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/None", 
              "name": [
                "Crystal Growth Research Center, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Rendakova", 
            "givenName": "S. V.", 
            "id": "sg:person.014756206051.76", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014756206051.76"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "PhysTech WBG Research Group, A.F. Ioffe Institute, 94021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "PhysTech WBG Research Group, A.F. Ioffe Institute, 94021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Nikitina", 
            "givenName": "I. P.", 
            "id": "sg:person.011073042745.34", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011073042745.34"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "TDI, Inc., 20877, Gaithersburg, MD", 
              "id": "http://www.grid.ac/institutes/None", 
              "name": [
                "PhysTech WBG Research Group, A.F. Ioffe Institute, 94021, St. Petersburg, Russia", 
                "TDI, Inc., 20877, Gaithersburg, MD"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Vassilevski", 
            "givenName": "K. V.", 
            "id": "sg:person.07446617324.96", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07446617324.96"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "MSRCE, Howard University, 20059, Washington DC", 
              "id": "http://www.grid.ac/institutes/grid.257127.4", 
              "name": [
                "TDI, Inc., 20877, Gaithersburg, MD", 
                "MSRCE, Howard University, 20059, Washington DC"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Dmitriev", 
            "givenName": "V. A.", 
            "id": "sg:person.015770322753.28", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015770322753.28"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1007/978-3-642-84402-7_47", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1089833358", 
              "https://doi.org/10.1007/978-3-642-84402-7_47"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1557/s1092578300002106", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1028511102", 
              "https://doi.org/10.1557/s1092578300002106"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "1998-04", 
        "datePublishedReg": "1998-04-01", 
        "description": "Abstract6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epitaxial layers grown on 6H-SiC wafers were used as substrates for GaN HVPE growth. The GaN layers exhibit high crystal quality which was determined by x-ray diffraction. The full width at a half maximum (FWHM) for the \u03c9-scan rocking curve for (0002) GaN reflection was \u223c120 arcsec. The photoluminescence spectra for these films were dominated by band-edge emission. The FWHM of the edge PL peak at 361 nm was about 5 nm (80K).", 
        "genre": "article", 
        "id": "sg:pub.10.1007/s11664-998-0401-z", 
        "inLanguage": "en", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1136213", 
            "issn": [
              "0361-5235", 
              "1543-186X"
            ], 
            "name": "Journal of Electronic Materials", 
            "publisher": "Springer Nature", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "4", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "27"
          }
        ], 
        "keywords": [
          "hydride vapor phase epitaxy", 
          "low temperature liquid phase epitaxy", 
          "vapor phase epitaxy", 
          "phase epitaxy", 
          "type epitaxial layer", 
          "subsequent epitaxial growth", 
          "liquid phase epitaxy", 
          "high crystal quality", 
          "scan rocking curves", 
          "epitaxial growth", 
          "epitaxial layers", 
          "band-edge emission", 
          "crystal quality", 
          "GaN layers", 
          "HVPE growth", 
          "layer", 
          "ray diffraction", 
          "epitaxy", 
          "rocking curve", 
          "GaN", 
          "SiC", 
          "wafers", 
          "full width", 
          "photoluminescence spectra", 
          "films", 
          "GaN (0002) reflection", 
          "PL peak", 
          "diffraction", 
          "substrate", 
          "emission", 
          "width", 
          "first time", 
          "FWHM", 
          "curves", 
          "arcsec", 
          "growth", 
          "peak", 
          "quality", 
          "time", 
          "reflection", 
          "spectra", 
          "Abstract6H-SiC/GaN pn-heterostructures", 
          "GaN pn-heterostructures", 
          "pn-heterostructures", 
          "temperature liquid phase epitaxy", 
          "GaN HVPE growth", 
          "edge PL peak", 
          "type 6H-SiC layers"
        ], 
        "name": "GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers", 
        "pagination": "288-291", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1005675092"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/s11664-998-0401-z"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/s11664-998-0401-z", 
          "https://app.dimensions.ai/details/publication/pub.1005675092"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2021-11-01T18:02", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_283.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1007/s11664-998-0401-z"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11664-998-0401-z'

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    This table displays all metadata directly associated to this object as RDF triples.

    152 TRIPLES      22 PREDICATES      76 URIs      66 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/s11664-998-0401-z schema:about anzsrc-for:09
    2 anzsrc-for:0912
    3 schema:author N52e3bdb3160040cfb25d3153f4355919
    4 schema:citation sg:pub.10.1007/978-3-642-84402-7_47
    5 sg:pub.10.1557/s1092578300002106
    6 schema:datePublished 1998-04
    7 schema:datePublishedReg 1998-04-01
    8 schema:description Abstract6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epitaxial layers grown on 6H-SiC wafers were used as substrates for GaN HVPE growth. The GaN layers exhibit high crystal quality which was determined by x-ray diffraction. The full width at a half maximum (FWHM) for the ω-scan rocking curve for (0002) GaN reflection was ∼120 arcsec. The photoluminescence spectra for these films were dominated by band-edge emission. The FWHM of the edge PL peak at 361 nm was about 5 nm (80K).
    9 schema:genre article
    10 schema:inLanguage en
    11 schema:isAccessibleForFree false
    12 schema:isPartOf N1fd80a26b244473291e70a17d8cc50b0
    13 N98e55702b00b4e0591d22a07d14539f0
    14 sg:journal.1136213
    15 schema:keywords Abstract6H-SiC/GaN pn-heterostructures
    16 FWHM
    17 GaN
    18 GaN (0002) reflection
    19 GaN HVPE growth
    20 GaN layers
    21 GaN pn-heterostructures
    22 HVPE growth
    23 PL peak
    24 SiC
    25 arcsec
    26 band-edge emission
    27 crystal quality
    28 curves
    29 diffraction
    30 edge PL peak
    31 emission
    32 epitaxial growth
    33 epitaxial layers
    34 epitaxy
    35 films
    36 first time
    37 full width
    38 growth
    39 high crystal quality
    40 hydride vapor phase epitaxy
    41 layer
    42 liquid phase epitaxy
    43 low temperature liquid phase epitaxy
    44 peak
    45 phase epitaxy
    46 photoluminescence spectra
    47 pn-heterostructures
    48 quality
    49 ray diffraction
    50 reflection
    51 rocking curve
    52 scan rocking curves
    53 spectra
    54 subsequent epitaxial growth
    55 substrate
    56 temperature liquid phase epitaxy
    57 time
    58 type 6H-SiC layers
    59 type epitaxial layer
    60 vapor phase epitaxy
    61 wafers
    62 width
    63 schema:name GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers
    64 schema:pagination 288-291
    65 schema:productId N43c096154663417ab4a9df6a6e267824
    66 N71b647743ae04e2b849a9742fbec4ed2
    67 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005675092
    68 https://doi.org/10.1007/s11664-998-0401-z
    69 schema:sdDatePublished 2021-11-01T18:02
    70 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    71 schema:sdPublisher Nf99462a8f87146acaa86333e0d218bde
    72 schema:url https://doi.org/10.1007/s11664-998-0401-z
    73 sgo:license sg:explorer/license/
    74 sgo:sdDataset articles
    75 rdf:type schema:ScholarlyArticle
    76 N07875d9d950d4d56becbb21815df2a3d rdf:first sg:person.07446617324.96
    77 rdf:rest N32e5f91d50c0491bb87ff5c44df14dfb
    78 N1fd80a26b244473291e70a17d8cc50b0 schema:volumeNumber 27
    79 rdf:type schema:PublicationVolume
    80 N32e5f91d50c0491bb87ff5c44df14dfb rdf:first sg:person.015770322753.28
    81 rdf:rest rdf:nil
    82 N336ba5525da8485aa15cacb8e649d5fc rdf:first sg:person.014756206051.76
    83 rdf:rest N6a1d36fbfd1446df9b2108f56ac19540
    84 N43c096154663417ab4a9df6a6e267824 schema:name doi
    85 schema:value 10.1007/s11664-998-0401-z
    86 rdf:type schema:PropertyValue
    87 N52e3bdb3160040cfb25d3153f4355919 rdf:first sg:person.010050311505.33
    88 rdf:rest N336ba5525da8485aa15cacb8e649d5fc
    89 N6a1d36fbfd1446df9b2108f56ac19540 rdf:first sg:person.011073042745.34
    90 rdf:rest N07875d9d950d4d56becbb21815df2a3d
    91 N71b647743ae04e2b849a9742fbec4ed2 schema:name dimensions_id
    92 schema:value pub.1005675092
    93 rdf:type schema:PropertyValue
    94 N98e55702b00b4e0591d22a07d14539f0 schema:issueNumber 4
    95 rdf:type schema:PublicationIssue
    96 Nf99462a8f87146acaa86333e0d218bde schema:name Springer Nature - SN SciGraph project
    97 rdf:type schema:Organization
    98 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
    99 schema:name Engineering
    100 rdf:type schema:DefinedTerm
    101 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
    102 schema:name Materials Engineering
    103 rdf:type schema:DefinedTerm
    104 sg:journal.1136213 schema:issn 0361-5235
    105 1543-186X
    106 schema:name Journal of Electronic Materials
    107 schema:publisher Springer Nature
    108 rdf:type schema:Periodical
    109 sg:person.010050311505.33 schema:affiliation grid-institutes:None
    110 schema:familyName Nikolaev
    111 schema:givenName A. E.
    112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33
    113 rdf:type schema:Person
    114 sg:person.011073042745.34 schema:affiliation grid-institutes:grid.423485.c
    115 schema:familyName Nikitina
    116 schema:givenName I. P.
    117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011073042745.34
    118 rdf:type schema:Person
    119 sg:person.014756206051.76 schema:affiliation grid-institutes:None
    120 schema:familyName Rendakova
    121 schema:givenName S. V.
    122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014756206051.76
    123 rdf:type schema:Person
    124 sg:person.015770322753.28 schema:affiliation grid-institutes:grid.257127.4
    125 schema:familyName Dmitriev
    126 schema:givenName V. A.
    127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015770322753.28
    128 rdf:type schema:Person
    129 sg:person.07446617324.96 schema:affiliation grid-institutes:None
    130 schema:familyName Vassilevski
    131 schema:givenName K. V.
    132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07446617324.96
    133 rdf:type schema:Person
    134 sg:pub.10.1007/978-3-642-84402-7_47 schema:sameAs https://app.dimensions.ai/details/publication/pub.1089833358
    135 https://doi.org/10.1007/978-3-642-84402-7_47
    136 rdf:type schema:CreativeWork
    137 sg:pub.10.1557/s1092578300002106 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028511102
    138 https://doi.org/10.1557/s1092578300002106
    139 rdf:type schema:CreativeWork
    140 grid-institutes:None schema:alternateName Crystal Growth Research Center, 194021, St. Petersburg, Russia
    141 TDI, Inc., 20877, Gaithersburg, MD
    142 schema:name Crystal Growth Research Center, 194021, St. Petersburg, Russia
    143 PhysTech WBG Research Group, A.F. Ioffe Institute, 94021, St. Petersburg, Russia
    144 TDI, Inc., 20877, Gaithersburg, MD
    145 rdf:type schema:Organization
    146 grid-institutes:grid.257127.4 schema:alternateName MSRCE, Howard University, 20059, Washington DC
    147 schema:name MSRCE, Howard University, 20059, Washington DC
    148 TDI, Inc., 20877, Gaithersburg, MD
    149 rdf:type schema:Organization
    150 grid-institutes:grid.423485.c schema:alternateName PhysTech WBG Research Group, A.F. Ioffe Institute, 94021, St. Petersburg, Russia
    151 schema:name PhysTech WBG Research Group, A.F. Ioffe Institute, 94021, St. Petersburg, Russia
    152 rdf:type schema:Organization
     




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