Injection lasers based on InGaAs quantum dots in an AlGaAs matrix View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-03

AUTHORS

A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul’nikov, M. V. Maximov, N. N. Ledentsov, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, Y. M. Shernyakov, P. S. Kop’ev, D. Bimberg, Zh. I. Alferov

ABSTRACT

Arrays of vertically coupled InGaAs quantum dots (QDs) in an AlGaAs matrix have been used in injection lasers. Increase in the band gap of a matrix material by replacement of a GaAs matrix with an AlGaAs one led to dramatic increase in quantum dot localization energy. By using this approach, we reduced the thermal population of the matrix and wetting layer states and thus decreased room temperature threshold current density to 63 A/cm2, increased differential efficiency up to 65%, and achieved room temperature continuous wave operation with output power of 1 W. Negative characteristic temperature has been observed in temperature dependence of threshold current density of these lasers in some temperature range. A qualitative explanation assuming a transition from non-equilibrium to Fermi population of QD states is proposed. More... »

PAGES

106-109

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-998-0198-9

DOI

http://dx.doi.org/10.1007/s11664-998-0198-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014088795


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