Electron transport properties of quantized silicon carbide inversion layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-03

AUTHORS

J. B. Roldán, F. Gámiz, J. A. López Villanueva, P. Caetujo

ABSTRACT

Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polar-optical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si metal-oxide semiconductor field effect transistors. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher. More... »

PAGES

203-207

References to SciGraph publications

Journal

TITLE

Journal of Electronic Materials

ISSUE

3

VOLUME

26

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-997-0151-3

DOI

http://dx.doi.org/10.1007/s11664-997-0151-3

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045123243


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rold\u00e1n", 
        "givenName": "J. B.", 
        "id": "sg:person.015661624507.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015661624507.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "G\u00e1miz", 
        "givenName": "F.", 
        "id": "sg:person.011233241475.94", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011233241475.94"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "L\u00f3pez Villanueva", 
        "givenName": "J. A.", 
        "id": "sg:person.016625073657.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016625073657.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Caetujo", 
        "givenName": "P.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0038-1101(93)90167-o", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003152484"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(93)90167-o", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003152484"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0003-4916(81)90250-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009967830"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0921-4526(93)90279-f", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010807080"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0921-4526(93)90279-f", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010807080"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(95)00004-d", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015420070"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(91)90136-m", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035019917"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(91)90136-m", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035019917"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02666657", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045846453", 
          "https://doi.org/10.1007/bf02666657"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02666657", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045846453", 
          "https://doi.org/10.1007/bf02666657"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1098(85)91107-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046941233"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1098(85)91107-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046941233"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/7/7/001", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051610039"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.341731", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057948874"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.347582", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057958230"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.356314", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057975341"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.356448", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057975560"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.363493", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057989154"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.98416", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058138518"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.163.816", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060436849"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.163.816", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060436849"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.12.2361", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060520070"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.12.2361", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060520070"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.293319", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061093812"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.370071", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061094291"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.381999", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061094358"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1997-03", 
    "datePublishedReg": "1997-03-01", 
    "description": "Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polar-optical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si metal-oxide semiconductor field effect transistors. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s11664-997-0151-3", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136213", 
        "issn": [
          "0361-5235", 
          "1543-186X"
        ], 
        "name": "Journal of Electronic Materials", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "26"
      }
    ], 
    "name": "Electron transport properties of quantized silicon carbide inversion layers", 
    "pagination": "203-207", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "d6eff8e035cd61e00d37c21a4651a6c9d1c2a298b6624fb0a3bda281d7880402"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11664-997-0151-3"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1045123243"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11664-997-0151-3", 
      "https://app.dimensions.ai/details/publication/pub.1045123243"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T02:11", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8700_00000524.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2Fs11664-997-0151-3"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11664-997-0151-3'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s11664-997-0151-3'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s11664-997-0151-3'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s11664-997-0151-3'


 

This table displays all metadata directly associated to this object as RDF triples.

139 TRIPLES      21 PREDICATES      46 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11664-997-0151-3 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nd5ab815ecab14ee6a768a219cbaa0787
4 schema:citation sg:pub.10.1007/bf02666657
5 https://doi.org/10.1016/0003-4916(81)90250-5
6 https://doi.org/10.1016/0038-1098(85)91107-x
7 https://doi.org/10.1016/0038-1101(91)90136-m
8 https://doi.org/10.1016/0038-1101(93)90167-o
9 https://doi.org/10.1016/0038-1101(95)00004-d
10 https://doi.org/10.1016/0921-4526(93)90279-f
11 https://doi.org/10.1063/1.341731
12 https://doi.org/10.1063/1.347582
13 https://doi.org/10.1063/1.356314
14 https://doi.org/10.1063/1.356448
15 https://doi.org/10.1063/1.363493
16 https://doi.org/10.1063/1.98416
17 https://doi.org/10.1088/0268-1242/7/7/001
18 https://doi.org/10.1103/physrev.163.816
19 https://doi.org/10.1103/physrevb.12.2361
20 https://doi.org/10.1109/16.293319
21 https://doi.org/10.1109/16.370071
22 https://doi.org/10.1109/16.381999
23 schema:datePublished 1997-03
24 schema:datePublishedReg 1997-03-01
25 schema:description Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polar-optical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si metal-oxide semiconductor field effect transistors. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.
26 schema:genre research_article
27 schema:inLanguage en
28 schema:isAccessibleForFree false
29 schema:isPartOf N7f55832c4bf44f8f8cf62a16db7f0058
30 Nc4854b1906604e699be6746cf4ebc341
31 sg:journal.1136213
32 schema:name Electron transport properties of quantized silicon carbide inversion layers
33 schema:pagination 203-207
34 schema:productId N08f8797729d14b22b237f4b2fd120e68
35 N741305eaae9f4c309c1a9580cae86b41
36 N8874a03b80144aa0b4c68cee9d468067
37 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045123243
38 https://doi.org/10.1007/s11664-997-0151-3
39 schema:sdDatePublished 2019-04-11T02:11
40 schema:sdLicense https://scigraph.springernature.com/explorer/license/
41 schema:sdPublisher N63a70e905c264e8182a190719152a81a
42 schema:url http://link.springer.com/10.1007%2Fs11664-997-0151-3
43 sgo:license sg:explorer/license/
44 sgo:sdDataset articles
45 rdf:type schema:ScholarlyArticle
46 N08f8797729d14b22b237f4b2fd120e68 schema:name readcube_id
47 schema:value d6eff8e035cd61e00d37c21a4651a6c9d1c2a298b6624fb0a3bda281d7880402
48 rdf:type schema:PropertyValue
49 N2d7bd28fe82443b1978aadc389eb35de rdf:first sg:person.016625073657.34
50 rdf:rest N47049d9307464b03bde9f418691c8e6e
51 N47049d9307464b03bde9f418691c8e6e rdf:first N4cf0925d5df942d5ad411d6f2baa2492
52 rdf:rest rdf:nil
53 N4cf0925d5df942d5ad411d6f2baa2492 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
54 schema:familyName Caetujo
55 schema:givenName P.
56 rdf:type schema:Person
57 N63a70e905c264e8182a190719152a81a schema:name Springer Nature - SN SciGraph project
58 rdf:type schema:Organization
59 N741305eaae9f4c309c1a9580cae86b41 schema:name doi
60 schema:value 10.1007/s11664-997-0151-3
61 rdf:type schema:PropertyValue
62 N7f55832c4bf44f8f8cf62a16db7f0058 schema:volumeNumber 26
63 rdf:type schema:PublicationVolume
64 N8874a03b80144aa0b4c68cee9d468067 schema:name dimensions_id
65 schema:value pub.1045123243
66 rdf:type schema:PropertyValue
67 Nc4854b1906604e699be6746cf4ebc341 schema:issueNumber 3
68 rdf:type schema:PublicationIssue
69 Nd5ab815ecab14ee6a768a219cbaa0787 rdf:first sg:person.015661624507.70
70 rdf:rest Nf66cdce710404a318a3667ecdc884b83
71 Nf66cdce710404a318a3667ecdc884b83 rdf:first sg:person.011233241475.94
72 rdf:rest N2d7bd28fe82443b1978aadc389eb35de
73 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
74 schema:name Engineering
75 rdf:type schema:DefinedTerm
76 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
77 schema:name Materials Engineering
78 rdf:type schema:DefinedTerm
79 sg:journal.1136213 schema:issn 0361-5235
80 1543-186X
81 schema:name Journal of Electronic Materials
82 rdf:type schema:Periodical
83 sg:person.011233241475.94 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
84 schema:familyName Gámiz
85 schema:givenName F.
86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011233241475.94
87 rdf:type schema:Person
88 sg:person.015661624507.70 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
89 schema:familyName Roldán
90 schema:givenName J. B.
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015661624507.70
92 rdf:type schema:Person
93 sg:person.016625073657.34 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
94 schema:familyName López Villanueva
95 schema:givenName J. A.
96 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016625073657.34
97 rdf:type schema:Person
98 sg:pub.10.1007/bf02666657 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045846453
99 https://doi.org/10.1007/bf02666657
100 rdf:type schema:CreativeWork
101 https://doi.org/10.1016/0003-4916(81)90250-5 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009967830
102 rdf:type schema:CreativeWork
103 https://doi.org/10.1016/0038-1098(85)91107-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1046941233
104 rdf:type schema:CreativeWork
105 https://doi.org/10.1016/0038-1101(91)90136-m schema:sameAs https://app.dimensions.ai/details/publication/pub.1035019917
106 rdf:type schema:CreativeWork
107 https://doi.org/10.1016/0038-1101(93)90167-o schema:sameAs https://app.dimensions.ai/details/publication/pub.1003152484
108 rdf:type schema:CreativeWork
109 https://doi.org/10.1016/0038-1101(95)00004-d schema:sameAs https://app.dimensions.ai/details/publication/pub.1015420070
110 rdf:type schema:CreativeWork
111 https://doi.org/10.1016/0921-4526(93)90279-f schema:sameAs https://app.dimensions.ai/details/publication/pub.1010807080
112 rdf:type schema:CreativeWork
113 https://doi.org/10.1063/1.341731 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057948874
114 rdf:type schema:CreativeWork
115 https://doi.org/10.1063/1.347582 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057958230
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1063/1.356314 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057975341
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1063/1.356448 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057975560
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1063/1.363493 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057989154
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1063/1.98416 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058138518
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1088/0268-1242/7/7/001 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051610039
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1103/physrev.163.816 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060436849
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1103/physrevb.12.2361 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060520070
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1109/16.293319 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061093812
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1109/16.370071 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061094291
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1109/16.381999 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061094358
136 rdf:type schema:CreativeWork
137 https://www.grid.ac/institutes/grid.4489.1 schema:alternateName University of Granada
138 schema:name Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071, Granada, Spain
139 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...