Carrier Transport Mechanism and Barrier Height of B-, Al- and B-Al-Ion-Doped ZnO Film/Graphene Schottky Contacts Prepared Using the Sol–Gel Method View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-03-20

AUTHORS

Yapeng Li, Kai Ma, Yingfeng Li, Pengju Xia, Hua Wang, Xiangyu Zou, Yan Liu, Qiang Zhang

ABSTRACT

In this article, graphene/ZnO Schottky contacts with different ion doping were fabricated by the sol–gel method. The results showed that the nanoparticles growth on the surface of ZnO film was limited by ion doping, and the number and size of nanoparticles decreased for B ion doping. Further, the ZnO film band gap presented a decreasing trend with B, Al and B-Al ion doping. The electrical properties of the graphene/ZnO Schottky contact incorporating an ion-doped ZnO film were investigated, where the results suggested that ion doping could effectively improve the barrier height and reduce the leakage current. This phenomenon can be explained by the reduction of the oxygen vacancies on the surface of the ZnO film by ion doping, which leads to a reduction of the defect level at the interface and weakened Fermi level pinning. More... »

PAGES

1-8

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-019-07131-8

DOI

http://dx.doi.org/10.1007/s11664-019-07131-8

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112897968


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