Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition View Full Text


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Article Info

DATE

2019-03-06

AUTHORS

Emmanuel Paneerselvam, Vinoth Kumar Lakshmi Narayanan, Nilesh J. Vasa, Mitsuhiro Higashihata, Daisuke Nakamura, Hiroshi Ikenoue, M. S. Ramachandra Rao

ABSTRACT

Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping. More... »

PAGES

1-11

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-019-07097-7

DOI

http://dx.doi.org/10.1007/s11664-019-07097-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112587645


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    "description": "Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800\u00b0C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si\u2013C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I\u2013V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV\u2013visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.", 
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Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

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curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11664-019-07097-7'

N-Triples is a line-based linked data format ideal for batch operations.

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Turtle is a human-readable linked data format.

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RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s11664-019-07097-7'


 

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