Performance Analysis and Investigation of Subthreshold Short-Channel Behavior of a Dual-Material Elliptical Gate-All-Around MOSFET View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-05

AUTHORS

Pritha Banerjee, Subir Kumar Sarkar

ABSTRACT

The current investigation encompasses a detailed subthreshold short-channel performance analysis of a structure, namely a dual-material elliptical gate-all-around metal-oxide semiconductor field-effect transistor (DM EGAA MOSFET). This quasi-three-dimensional scaling length-based model features expression of central bottom potential from which parameters like threshold voltage and electric field have also been studied. The extent of immunity of the proposed device towards the different short-channel effects (SCEs) has also been studied. The analytical models are validated using ATLAS simulation data. More... »

PAGES

1-6

Journal

TITLE

Journal of Electronic Materials

ISSUE

5

VOLUME

48

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-019-07082-0

DOI

http://dx.doi.org/10.1007/s11664-019-07082-0

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112519998


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