Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound View Full Text


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Article Info

DATE

2018-08

AUTHORS

Ya. M. Olikh, M. D. Tymochko, O. Ya. Olikh, V. A. Shenderovsky

ABSTRACT

We studied the temperature dependence (77–300 K) of the electron concentration and mobility using the Hall method under ultrasound (the acoustic Hall method) to determine the mechanisms by which ultrasound influences the electrical activity of near-dislocation clusters in n-type low-ohmic Cd1−xZnxTe single crystals (NCl ≈ 1024 m−3; x = 0; 0.04) with different dislocation density (0.4–5.1) × 1010 m−2. Changes in electrophysical parameters were found to occur as a function of temperature and ultrasound intensity. To evaluate the relative contribution of different charge carrier scattering mechanisms (lattice scattering, ionized impurity scattering, neutral impurity scattering, and dislocation scattering) and their change under ultrasound, a differential evolution method was used. This method made it possible to analyze experimental mobility μH(T) by its nonlinear approximation with characteristic temperature dependence for each mechanism. An increase in neutral impurity scattering and a decrease in ionized impurity and dislocation scattering components were observed under ultrasound. The character and the amount of these acoustically induced changes correlate with particular sample dislocation characteristics. It was concluded that the observed effects are related to the acoustically induced transformation of the point-defect structure, mainly in the near dislocation crystal regions. More... »

PAGES

4370-4378

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-018-6332-4

DOI

http://dx.doi.org/10.1007/s11664-018-6332-4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1103995295


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V.Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauky, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Olikh", 
        "givenName": "Ya. M.", 
        "id": "sg:person.013714457236.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013714457236.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V.Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauky, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tymochko", 
        "givenName": "M. D.", 
        "id": "sg:person.016363150453.01", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016363150453.01"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Taras Shevchenko National University of Kyiv", 
          "id": "https://www.grid.ac/institutes/grid.34555.32", 
          "name": [
            "Faculty of Physics, Taras Shevchenko National University of Kyiv, 01601, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Olikh", 
        "givenName": "O. Ya.", 
        "id": "sg:person.010277023555.65", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010277023555.65"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics", 
          "id": "https://www.grid.ac/institutes/grid.425082.9", 
          "name": [
            "Institute of Physics, NAS of Ukraine, 46, pr. Nauky, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shenderovsky", 
        "givenName": "V. A.", 
        "id": "sg:person.015626736166.27", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015626736166.27"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.nima.2014.08.040", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003079259"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0034-4885/72/3/036502", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003603692"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.spmi.2016.04.038", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006311711"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.ultras.2015.12.001", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1007748112"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp3039626", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009470761"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/25/3/035001", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016768075"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/25/3/035001", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016768075"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1356141", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027261717", 
          "https://doi.org/10.1134/1.1356141"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2008.11.010", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1029886384"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-7091-4111-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032865936", 
          "https://doi.org/10.1007/978-3-7091-4111-3"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-7091-4111-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032865936", 
          "https://doi.org/10.1007/978-3-7091-4111-3"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s106378501101007x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034333791", 
          "https://doi.org/10.1134/s106378501101007x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/17/10/305", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038763715"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4926420", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044384038"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://app.dimensions.ai/details/publication/pub.1047888670", 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-662-02403-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047888670", 
          "https://doi.org/10.1007/978-3-662-02403-4"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-662-02403-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047888670", 
          "https://doi.org/10.1007/978-3-662-02403-4"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/15/3/306", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050234689"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1187701", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051843558", 
          "https://doi.org/10.1134/1.1187701"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1051/rphysap:01990002506048100", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057069339"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.3702850", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058004579"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.129.2471", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060426544"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.129.2471", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060426544"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.82.1237", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060818908"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.82.1237", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060818908"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/ted.2003.813230", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061590927"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/ted.2011.2151863", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061594424"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1142/s0218127409024475", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062955725"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.15407/ujpe61.05.0381", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067797712"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.15407/ujpe61.05.0381", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067797712"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.commatsci.2017.07.039", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1091412528"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/tns.2017.2748700", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1091480560"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.5001123", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1100625426"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-08", 
    "datePublishedReg": "2018-08-01", 
    "description": "We studied the temperature dependence (77\u2013300 K) of the electron concentration and mobility using the Hall method under ultrasound (the acoustic Hall method) to determine the mechanisms by which ultrasound influences the electrical activity of near-dislocation clusters in n-type low-ohmic Cd1\u2212xZnxTe single crystals (NCl \u2248 1024 m\u22123; x = 0; 0.04) with different dislocation density (0.4\u20135.1) \u00d7 1010 m\u22122. Changes in electrophysical parameters were found to occur as a function of temperature and ultrasound intensity. To evaluate the relative contribution of different charge carrier scattering mechanisms (lattice scattering, ionized impurity scattering, neutral impurity scattering, and dislocation scattering) and their change under ultrasound, a differential evolution method was used. This method made it possible to analyze experimental mobility \u03bcH(T) by its nonlinear approximation with characteristic temperature dependence for each mechanism. An increase in neutral impurity scattering and a decrease in ionized impurity and dislocation scattering components were observed under ultrasound. The character and the amount of these acoustically induced changes correlate with particular sample dislocation characteristics. It was concluded that the observed effects are related to the acoustically induced transformation of the point-defect structure, mainly in the near dislocation crystal regions.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s11664-018-6332-4", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136213", 
        "issn": [
          "0361-5235", 
          "1543-186X"
        ], 
        "name": "Journal of Electronic Materials", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "47"
      }
    ], 
    "name": "Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound", 
    "pagination": "4370-4378", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "78b387ed4f78e5ce5cf7c6927805d58d85a10aceb0f75b89de35a8d4098bfc6d"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11664-018-6332-4"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1103995295"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11664-018-6332-4", 
      "https://app.dimensions.ai/details/publication/pub.1103995295"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T09:50", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000347_0000000347/records_89786_00000003.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1007%2Fs11664-018-6332-4"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

173 TRIPLES      21 PREDICATES      54 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11664-018-6332-4 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nc5117d6530d045c482021911d9b7e9b3
4 schema:citation sg:pub.10.1007/978-3-662-02403-4
5 sg:pub.10.1007/978-3-7091-4111-3
6 sg:pub.10.1134/1.1187701
7 sg:pub.10.1134/1.1356141
8 sg:pub.10.1134/s106378501101007x
9 https://app.dimensions.ai/details/publication/pub.1047888670
10 https://doi.org/10.1016/j.commatsci.2017.07.039
11 https://doi.org/10.1016/j.nima.2014.08.040
12 https://doi.org/10.1016/j.spmi.2016.04.038
13 https://doi.org/10.1016/j.sse.2008.11.010
14 https://doi.org/10.1016/j.ultras.2015.12.001
15 https://doi.org/10.1021/jp3039626
16 https://doi.org/10.1051/rphysap:01990002506048100
17 https://doi.org/10.1063/1.3702850
18 https://doi.org/10.1063/1.4926420
19 https://doi.org/10.1063/1.5001123
20 https://doi.org/10.1088/0034-4885/72/3/036502
21 https://doi.org/10.1088/0268-1242/15/3/306
22 https://doi.org/10.1088/0268-1242/17/10/305
23 https://doi.org/10.1088/0268-1242/25/3/035001
24 https://doi.org/10.1103/physrev.129.2471
25 https://doi.org/10.1103/physrevlett.82.1237
26 https://doi.org/10.1109/ted.2003.813230
27 https://doi.org/10.1109/ted.2011.2151863
28 https://doi.org/10.1109/tns.2017.2748700
29 https://doi.org/10.1142/s0218127409024475
30 https://doi.org/10.15407/ujpe61.05.0381
31 schema:datePublished 2018-08
32 schema:datePublishedReg 2018-08-01
33 schema:description We studied the temperature dependence (77–300 K) of the electron concentration and mobility using the Hall method under ultrasound (the acoustic Hall method) to determine the mechanisms by which ultrasound influences the electrical activity of near-dislocation clusters in n-type low-ohmic Cd1−xZnxTe single crystals (NCl ≈ 1024 m−3; x = 0; 0.04) with different dislocation density (0.4–5.1) × 1010 m−2. Changes in electrophysical parameters were found to occur as a function of temperature and ultrasound intensity. To evaluate the relative contribution of different charge carrier scattering mechanisms (lattice scattering, ionized impurity scattering, neutral impurity scattering, and dislocation scattering) and their change under ultrasound, a differential evolution method was used. This method made it possible to analyze experimental mobility μH(T) by its nonlinear approximation with characteristic temperature dependence for each mechanism. An increase in neutral impurity scattering and a decrease in ionized impurity and dislocation scattering components were observed under ultrasound. The character and the amount of these acoustically induced changes correlate with particular sample dislocation characteristics. It was concluded that the observed effects are related to the acoustically induced transformation of the point-defect structure, mainly in the near dislocation crystal regions.
34 schema:genre research_article
35 schema:inLanguage en
36 schema:isAccessibleForFree false
37 schema:isPartOf N6689f53fcae642c6bf61991886078e9a
38 N8e88147ce1464714b0fc817609e05bc6
39 sg:journal.1136213
40 schema:name Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound
41 schema:pagination 4370-4378
42 schema:productId N2cce1f3198b54786b40e4a1847100941
43 Nb0f6c38aa5a044b2be7de6a16d0b7860
44 Ne08af05aa54b4ccf8d9e8a9a4878141c
45 schema:sameAs https://app.dimensions.ai/details/publication/pub.1103995295
46 https://doi.org/10.1007/s11664-018-6332-4
47 schema:sdDatePublished 2019-04-11T09:50
48 schema:sdLicense https://scigraph.springernature.com/explorer/license/
49 schema:sdPublisher Na17ea99733d842c5b77150996b743edc
50 schema:url https://link.springer.com/10.1007%2Fs11664-018-6332-4
51 sgo:license sg:explorer/license/
52 sgo:sdDataset articles
53 rdf:type schema:ScholarlyArticle
54 N0a815cdd58b44bed9fa2b7f0f9af2977 rdf:first sg:person.010277023555.65
55 rdf:rest Nc915e18216e5444e96b5512346b3a231
56 N2cce1f3198b54786b40e4a1847100941 schema:name doi
57 schema:value 10.1007/s11664-018-6332-4
58 rdf:type schema:PropertyValue
59 N6689f53fcae642c6bf61991886078e9a schema:issueNumber 8
60 rdf:type schema:PublicationIssue
61 N8e88147ce1464714b0fc817609e05bc6 schema:volumeNumber 47
62 rdf:type schema:PublicationVolume
63 N9c3efe337af0423899e0401b89188d9c rdf:first sg:person.016363150453.01
64 rdf:rest N0a815cdd58b44bed9fa2b7f0f9af2977
65 Na17ea99733d842c5b77150996b743edc schema:name Springer Nature - SN SciGraph project
66 rdf:type schema:Organization
67 Nb0f6c38aa5a044b2be7de6a16d0b7860 schema:name readcube_id
68 schema:value 78b387ed4f78e5ce5cf7c6927805d58d85a10aceb0f75b89de35a8d4098bfc6d
69 rdf:type schema:PropertyValue
70 Nc5117d6530d045c482021911d9b7e9b3 rdf:first sg:person.013714457236.02
71 rdf:rest N9c3efe337af0423899e0401b89188d9c
72 Nc915e18216e5444e96b5512346b3a231 rdf:first sg:person.015626736166.27
73 rdf:rest rdf:nil
74 Ne08af05aa54b4ccf8d9e8a9a4878141c schema:name dimensions_id
75 schema:value pub.1103995295
76 rdf:type schema:PropertyValue
77 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
78 schema:name Engineering
79 rdf:type schema:DefinedTerm
80 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
81 schema:name Materials Engineering
82 rdf:type schema:DefinedTerm
83 sg:journal.1136213 schema:issn 0361-5235
84 1543-186X
85 schema:name Journal of Electronic Materials
86 rdf:type schema:Periodical
87 sg:person.010277023555.65 schema:affiliation https://www.grid.ac/institutes/grid.34555.32
88 schema:familyName Olikh
89 schema:givenName O. Ya.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010277023555.65
91 rdf:type schema:Person
92 sg:person.013714457236.02 schema:affiliation https://www.grid.ac/institutes/grid.466789.2
93 schema:familyName Olikh
94 schema:givenName Ya. M.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013714457236.02
96 rdf:type schema:Person
97 sg:person.015626736166.27 schema:affiliation https://www.grid.ac/institutes/grid.425082.9
98 schema:familyName Shenderovsky
99 schema:givenName V. A.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015626736166.27
101 rdf:type schema:Person
102 sg:person.016363150453.01 schema:affiliation https://www.grid.ac/institutes/grid.466789.2
103 schema:familyName Tymochko
104 schema:givenName M. D.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016363150453.01
106 rdf:type schema:Person
107 sg:pub.10.1007/978-3-662-02403-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047888670
108 https://doi.org/10.1007/978-3-662-02403-4
109 rdf:type schema:CreativeWork
110 sg:pub.10.1007/978-3-7091-4111-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032865936
111 https://doi.org/10.1007/978-3-7091-4111-3
112 rdf:type schema:CreativeWork
113 sg:pub.10.1134/1.1187701 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051843558
114 https://doi.org/10.1134/1.1187701
115 rdf:type schema:CreativeWork
116 sg:pub.10.1134/1.1356141 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027261717
117 https://doi.org/10.1134/1.1356141
118 rdf:type schema:CreativeWork
119 sg:pub.10.1134/s106378501101007x schema:sameAs https://app.dimensions.ai/details/publication/pub.1034333791
120 https://doi.org/10.1134/s106378501101007x
121 rdf:type schema:CreativeWork
122 https://app.dimensions.ai/details/publication/pub.1047888670 schema:CreativeWork
123 https://doi.org/10.1016/j.commatsci.2017.07.039 schema:sameAs https://app.dimensions.ai/details/publication/pub.1091412528
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1016/j.nima.2014.08.040 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003079259
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1016/j.spmi.2016.04.038 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006311711
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1016/j.sse.2008.11.010 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029886384
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1016/j.ultras.2015.12.001 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007748112
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1021/jp3039626 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009470761
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1051/rphysap:01990002506048100 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057069339
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1063/1.3702850 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058004579
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1063/1.4926420 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044384038
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1063/1.5001123 schema:sameAs https://app.dimensions.ai/details/publication/pub.1100625426
142 rdf:type schema:CreativeWork
143 https://doi.org/10.1088/0034-4885/72/3/036502 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003603692
144 rdf:type schema:CreativeWork
145 https://doi.org/10.1088/0268-1242/15/3/306 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050234689
146 rdf:type schema:CreativeWork
147 https://doi.org/10.1088/0268-1242/17/10/305 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038763715
148 rdf:type schema:CreativeWork
149 https://doi.org/10.1088/0268-1242/25/3/035001 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016768075
150 rdf:type schema:CreativeWork
151 https://doi.org/10.1103/physrev.129.2471 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060426544
152 rdf:type schema:CreativeWork
153 https://doi.org/10.1103/physrevlett.82.1237 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060818908
154 rdf:type schema:CreativeWork
155 https://doi.org/10.1109/ted.2003.813230 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061590927
156 rdf:type schema:CreativeWork
157 https://doi.org/10.1109/ted.2011.2151863 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061594424
158 rdf:type schema:CreativeWork
159 https://doi.org/10.1109/tns.2017.2748700 schema:sameAs https://app.dimensions.ai/details/publication/pub.1091480560
160 rdf:type schema:CreativeWork
161 https://doi.org/10.1142/s0218127409024475 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062955725
162 rdf:type schema:CreativeWork
163 https://doi.org/10.15407/ujpe61.05.0381 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067797712
164 rdf:type schema:CreativeWork
165 https://www.grid.ac/institutes/grid.34555.32 schema:alternateName Taras Shevchenko National University of Kyiv
166 schema:name Faculty of Physics, Taras Shevchenko National University of Kyiv, 01601, Kiev, Ukraine
167 rdf:type schema:Organization
168 https://www.grid.ac/institutes/grid.425082.9 schema:alternateName Institute of Physics
169 schema:name Institute of Physics, NAS of Ukraine, 46, pr. Nauky, 03028, Kiev, Ukraine
170 rdf:type schema:Organization
171 https://www.grid.ac/institutes/grid.466789.2 schema:alternateName Institute of Semiconductor Physics
172 schema:name V.Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauky, 03028, Kiev, Ukraine
173 rdf:type schema:Organization
 




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