Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-09

AUTHORS

A. Navarro, O. Martinez, B. Galiana, I. Lombardero, M. Ochoa, I. García, M. Gabás, C. Ballesteros, J. Jimenez, C. Algora

ABSTRACT

The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission. More... »

PAGES

5061-5067

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-018-6325-3

DOI

http://dx.doi.org/10.1007/s11664-018-6325-3

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1104301593


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