Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-10-20

AUTHORS

Wei Dou, Seyed Amir Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Yiyin Zhou, Bader Alharthi, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Mourad Benamara, Baohua Li, Hameed A. Naseem, Mansour Mortazavi, Shui-Qing Yu

ABSTRACT

This paper reports the study of Ge0.95Sn0.05/Ge0.91Sn0.09/Ge0.95Sn0.05 single quantum well (SQW) and double quantum wells (DQWs). The quantum well (QW) structures were grown on Ge buffered Si substrates using an industrial standard reduced-pressure chemical vapor deposition system. Pseudomorphically grown structures were observed using x-ray diffraction measurements. Defect-free interfaces between each layer were revealed using cross-sectional transmission electron microscopy. Atomic-scale high-resolution transmission electron microscopy and Fourier transform patterns exhibited the high crystalline quality of QWs. Temperature-dependent photoluminescence (PL) was performed, and the emission peaks attributed to the QW region were identified. The dominant optical transition changed from direct bandgap transition at 300 K to indirect bandgap transition at 10 K. Theoretical calculation showed the type-I band alignment for the QWs. Moreover, the Γ and L valley electron distributions and non-radiative lifetimes were evaluated, which further explained the PL characteristics of the QW samples. More... »

PAGES

6265-6272

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-016-5031-2

DOI

http://dx.doi.org/10.1007/s11664-016-5031-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1001018062


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