Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-10-20

AUTHORS

Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Wei Du, Aboozar Mosleh, Wei Dou, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu

ABSTRACT

Germanium-tin (GeSn) films with Sn compositions from 5% to 11% were grown on Ge-buffered Si using a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. Material characterization showed that relaxed GeSn layers with thicknesses ranging from 400 nm to 1 μm were achieved. The strong photoluminescence (PL) intensity and the low defect density indicated very high material quality. In addition, temperature-dependent 10–300 K photoluminescence spectra showed that, due to strain relaxation of the material, the emission wavelength is longer than that of strained GeSn thin film samples (t < 200 nm) having the same Sn composition. At 300 K, the PL peak at 2520 nm was observed from the sample with a 1-μm-thick GeSn layer and 11% Sn composition. More... »

PAGES

6251-6257

References to SciGraph publications

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URI

http://scigraph.springernature.com/pub.10.1007/s11664-016-5028-x

DOI

http://dx.doi.org/10.1007/s11664-016-5028-x

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https://app.dimensions.ai/details/publication/pub.1016732474


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