Toward Discrete Axial p–n Junction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-05

AUTHORS

Matt D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Andrew M. Herrero, Alexana Roshko, Shannon M. Duff, Todd E. Harvey, Victor M. Bright, Norman A. Sanford, Kris A. Bertness

ABSTRACT

In this paper we investigate axial p–n junction GaN nanowires grown by plasma-assisted molecular beam epitaxy (MBE), with particular attention to the effect of Mg doping on the device characteristics of individual nanowire light-emitting diodes (LEDs). We observe that a significant fraction of single-nanowire LEDs produce measurable band-gap electroluminescence when a thin AlGaN electron blocking layer (EBL) is incorporated into the device structure near the junction. Similar devices with no EBL typically yield below-detection-limit electroluminescence, despite diode-like I–V characteristics and optically measured internal quantum efficiencies (IQEs) of ∼1%. I–V measurements of the p-regions in p–n junction nanowires, as well as nanowires doped with Mg only, indicate low p-type conductivity and asymmetric Schottky-like p-contacts. These observations suggest that imbalanced carrier injection from the junction and p-contact can produce significant nonradiative losses. More... »

PAGES

868-874

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-013-2498-y

DOI

http://dx.doi.org/10.1007/s11664-013-2498-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006318542


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