Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-05

AUTHORS

J. A. Grenko, C. L. Reynolds, D. W. Barlage, M. A. L. Johnson, S. E. Lappi, C. W. Ebert, E. A. Preble, T. Paskova, K. R. Evans

ABSTRACT

We report on the growth of Al0.25Ga0.75N/GaN heterostructures grown on low dislocation density vicinal surfaces of semi-insulating c-axis GaN substrates. Atomic force microscopy (AFM), photoluminescence (PL), cathodoluminescence (CL), high-resolution x-ray diffraction (HRXRD), secondary-ion mass spectroscopy (SIMS), Hall effect, and Raman spectroscopy have been used to assess structural and electrical properties as a function of substrate offcut. Bulk GaN substrates with vicinal offcut between 0.5° and 1.4° are optimal with respect to surface roughness and dopant incorporation. AFM, PL, and CL show decreasing Mg incorporation with increasing offcut angle. Raman spectroscopy, used to analyze biaxial strain, confirms essentially strain-free heterostructure growth on vicinal substrates with offcut angles between 0.5° and 1.4° off [0001] toward \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ [1\overline{1} 00] $$\end{document}. Aluminum (Al) incorporation in the AlxGa1−xN barrier assessed by Raman vibration is in excellent agreement with trends found by HRXRD. More... »

PAGES

504-516

References to SciGraph publications

  • 1995-06. Unintentional zinc diffusion in inp pn-homojunctions in JOURNAL OF ELECTRONIC MATERIALS
  • 1999. Nitride Semiconductors and Devices in NONE
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s11664-010-1153-0

    DOI

    http://dx.doi.org/10.1007/s11664-010-1153-0

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1006835283


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