Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-06

AUTHORS

Martina Baeumler, Frank Gütle, Vladimir Polyakov, Markus Cäsar, Michael Dammann, Helmer Konstanzer, Wilfried Pletschen, Wolfgang Bronner, Rüdiger Quay, Patrick Waltereit, Michael Mikulla, Oliver Ambacher, Franck Bourgeois, Reza Behtash, Klaus J. Riepe, Paul J. van der Wel, Jos Klappe, Thomas Rödle

ABSTRACT

Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented. In the off-state region the integrated EL intensity is proportional to the leakage current and independent of gate width for the devices under study. The slope of the integrated EL–leakage current dependence is determined by the electrical field in the source–drain direction. The influence of the GaN cap thickness is small or even negligible for higher drain bias. Stress during accelerated aging results in enhanced degradation for areas of enhanced leakage current and/or electric field values. More... »

PAGES

756-760

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-010-1120-9

DOI

http://dx.doi.org/10.1007/s11664-010-1120-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014732078


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