Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-01

AUTHORS

A.J. Letha, F.M. Chan, H.L. Hwang

ABSTRACT

The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H2 to SiH4 + H2 were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (a-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power. More... »

PAGES

39-42

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-009-0963-4

DOI

http://dx.doi.org/10.1007/s11664-009-0963-4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048076145


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Electronics Engineering Department, National Tsing Hua University, No. 101, Sect. 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan, R.O.C."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Letha", 
        "givenName": "A.J.", 
        "id": "sg:person.015563017041.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015563017041.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Electronics Engineering Department, National Tsing Hua University, No. 101, Sect. 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan, R.O.C."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chan", 
        "givenName": "F.M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Electronics Engineering Department, National Tsing Hua University, No. 101, Sect. 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan, R.O.C."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hwang", 
        "givenName": "H.L.", 
        "id": "sg:person.011767404762.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011767404762.72"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/s0169-4332(96)00883-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008362587"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0022-3093(02)00942-0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010167156"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.solener.2005.10.009", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1013826870"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.124426", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057688562"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1322373", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057694539"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.332620", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057936903"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.339591", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057946302"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0256-307x/22/12/041", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1059052479"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0256-307x/22/12/041", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1059052479"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.3346", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061094059"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.28.1789", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063044124"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2010-01", 
    "datePublishedReg": "2010-01-01", 
    "description": "The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150\u00b0C and at different dilution ratios of H2 to SiH4 + H2 were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (a-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s11664-009-0963-4", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136213", 
        "issn": [
          "0361-5235", 
          "1543-186X"
        ], 
        "name": "Journal of Electronic Materials", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "39"
      }
    ], 
    "name": "Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature", 
    "pagination": "39-42", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e506c75a7901e297d7163f38945e75799eec778c0c38fa591d0f662da0113126"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11664-009-0963-4"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1048076145"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11664-009-0963-4", 
      "https://app.dimensions.ai/details/publication/pub.1048076145"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T09:41", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000346_0000000346/records_99841_00000003.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2Fs11664-009-0963-4"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0963-4'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0963-4'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0963-4'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0963-4'


 

This table displays all metadata directly associated to this object as RDF triples.

104 TRIPLES      21 PREDICATES      37 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11664-009-0963-4 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N62e780aba57c4fcbacdff5a055e34fb7
4 schema:citation https://doi.org/10.1016/j.solener.2005.10.009
5 https://doi.org/10.1016/s0022-3093(02)00942-0
6 https://doi.org/10.1016/s0169-4332(96)00883-5
7 https://doi.org/10.1063/1.124426
8 https://doi.org/10.1063/1.1322373
9 https://doi.org/10.1063/1.332620
10 https://doi.org/10.1063/1.339591
11 https://doi.org/10.1088/0256-307x/22/12/041
12 https://doi.org/10.1109/16.3346
13 https://doi.org/10.1143/jjap.28.1789
14 schema:datePublished 2010-01
15 schema:datePublishedReg 2010-01-01
16 schema:description The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H2 to SiH4 + H2 were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (a-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power.
17 schema:genre research_article
18 schema:inLanguage en
19 schema:isAccessibleForFree false
20 schema:isPartOf N031333ffe25e4df48e83d815e714d542
21 N114da8a9e6e44cf18a869a22cdb992c8
22 sg:journal.1136213
23 schema:name Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature
24 schema:pagination 39-42
25 schema:productId N516f78f25b3c4df79fedfb0baba0840f
26 N6cb0f2e2440a44a49bacdf5d5c2fae64
27 Na0177a20d17d45aeab0a8aa0b5a0ac18
28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048076145
29 https://doi.org/10.1007/s11664-009-0963-4
30 schema:sdDatePublished 2019-04-11T09:41
31 schema:sdLicense https://scigraph.springernature.com/explorer/license/
32 schema:sdPublisher N7efa126328054ef4931744577aa49c55
33 schema:url http://link.springer.com/10.1007%2Fs11664-009-0963-4
34 sgo:license sg:explorer/license/
35 sgo:sdDataset articles
36 rdf:type schema:ScholarlyArticle
37 N031333ffe25e4df48e83d815e714d542 schema:volumeNumber 39
38 rdf:type schema:PublicationVolume
39 N114da8a9e6e44cf18a869a22cdb992c8 schema:issueNumber 1
40 rdf:type schema:PublicationIssue
41 N516f78f25b3c4df79fedfb0baba0840f schema:name readcube_id
42 schema:value e506c75a7901e297d7163f38945e75799eec778c0c38fa591d0f662da0113126
43 rdf:type schema:PropertyValue
44 N62e780aba57c4fcbacdff5a055e34fb7 rdf:first sg:person.015563017041.53
45 rdf:rest Nd26dac68e5144e5ab22fe79f1f0148ad
46 N6cb0f2e2440a44a49bacdf5d5c2fae64 schema:name dimensions_id
47 schema:value pub.1048076145
48 rdf:type schema:PropertyValue
49 N7efa126328054ef4931744577aa49c55 schema:name Springer Nature - SN SciGraph project
50 rdf:type schema:Organization
51 Na0177a20d17d45aeab0a8aa0b5a0ac18 schema:name doi
52 schema:value 10.1007/s11664-009-0963-4
53 rdf:type schema:PropertyValue
54 Nd26dac68e5144e5ab22fe79f1f0148ad rdf:first Ned932775bf8b465f8141081fe3fb7a59
55 rdf:rest Nd7625d89fc69466ebed6fbeddf5f41ff
56 Nd7625d89fc69466ebed6fbeddf5f41ff rdf:first sg:person.011767404762.72
57 rdf:rest rdf:nil
58 Ned932775bf8b465f8141081fe3fb7a59 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
59 schema:familyName Chan
60 schema:givenName F.M.
61 rdf:type schema:Person
62 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
63 schema:name Engineering
64 rdf:type schema:DefinedTerm
65 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
66 schema:name Materials Engineering
67 rdf:type schema:DefinedTerm
68 sg:journal.1136213 schema:issn 0361-5235
69 1543-186X
70 schema:name Journal of Electronic Materials
71 rdf:type schema:Periodical
72 sg:person.011767404762.72 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
73 schema:familyName Hwang
74 schema:givenName H.L.
75 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011767404762.72
76 rdf:type schema:Person
77 sg:person.015563017041.53 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
78 schema:familyName Letha
79 schema:givenName A.J.
80 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015563017041.53
81 rdf:type schema:Person
82 https://doi.org/10.1016/j.solener.2005.10.009 schema:sameAs https://app.dimensions.ai/details/publication/pub.1013826870
83 rdf:type schema:CreativeWork
84 https://doi.org/10.1016/s0022-3093(02)00942-0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010167156
85 rdf:type schema:CreativeWork
86 https://doi.org/10.1016/s0169-4332(96)00883-5 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008362587
87 rdf:type schema:CreativeWork
88 https://doi.org/10.1063/1.124426 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057688562
89 rdf:type schema:CreativeWork
90 https://doi.org/10.1063/1.1322373 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057694539
91 rdf:type schema:CreativeWork
92 https://doi.org/10.1063/1.332620 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057936903
93 rdf:type schema:CreativeWork
94 https://doi.org/10.1063/1.339591 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057946302
95 rdf:type schema:CreativeWork
96 https://doi.org/10.1088/0256-307x/22/12/041 schema:sameAs https://app.dimensions.ai/details/publication/pub.1059052479
97 rdf:type schema:CreativeWork
98 https://doi.org/10.1109/16.3346 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061094059
99 rdf:type schema:CreativeWork
100 https://doi.org/10.1143/jjap.28.1789 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063044124
101 rdf:type schema:CreativeWork
102 https://www.grid.ac/institutes/grid.38348.34 schema:alternateName National Tsing Hua University
103 schema:name Electronics Engineering Department, National Tsing Hua University, No. 101, Sect. 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan, R.O.C.
104 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...