GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-04

AUTHORS

L. M. Mansfield, K. A. Bertness, P. T. Blanchard, T. E. Harvey, A. W. Sanders, N. A. Sanford

ABSTRACT

We obtained the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current–voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning electron microscopy was used to measure the device dimensions. The nanowires were modeled with cylindrical geometry, and solutions were computed with a nonlinear fit algorithm. Simulations were also performed to verify the model. The carrier concentration was bounded by 6 × 1017 cm−3 and 1.3 × 1018 cm−3, and the mobility was between 300 cm2 V−1 s−1 and 600 cm2 V−1 s−1. More... »

PAGES

495-504

References to SciGraph publications

  • 2006-04. Catalyst-free growth of GaN nanowires in JOURNAL OF ELECTRONIC MATERIALS
  • 2006-04. High-yield GaN nanowire synthesis and field-effect transistor fabrication in JOURNAL OF ELECTRONIC MATERIALS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s11664-009-0672-z

    DOI

    http://dx.doi.org/10.1007/s11664-009-0672-z

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1031300483


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/1007", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Nanotechnology", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/10", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Technology", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "National Institute of Standards and Technology", 
              "id": "https://www.grid.ac/institutes/grid.94225.38", 
              "name": [
                "Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Mansfield", 
            "givenName": "L. M.", 
            "id": "sg:person.015603623717.39", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015603623717.39"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "National Institute of Standards and Technology", 
              "id": "https://www.grid.ac/institutes/grid.94225.38", 
              "name": [
                "Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Bertness", 
            "givenName": "K. A.", 
            "id": "sg:person.0601014145.26", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0601014145.26"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "National Institute of Standards and Technology", 
              "id": "https://www.grid.ac/institutes/grid.94225.38", 
              "name": [
                "Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Blanchard", 
            "givenName": "P. T.", 
            "id": "sg:person.01005076443.08", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01005076443.08"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "National Institute of Standards and Technology", 
              "id": "https://www.grid.ac/institutes/grid.94225.38", 
              "name": [
                "Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Harvey", 
            "givenName": "T. E.", 
            "id": "sg:person.012220660253.16", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012220660253.16"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "National Institute of Standards and Technology", 
              "id": "https://www.grid.ac/institutes/grid.94225.38", 
              "name": [
                "Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Sanders", 
            "givenName": "A. W.", 
            "id": "sg:person.01311512021.95", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01311512021.95"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "National Institute of Standards and Technology", 
              "id": "https://www.grid.ac/institutes/grid.94225.38", 
              "name": [
                "Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Sanford", 
            "givenName": "N. A.", 
            "id": "sg:person.01311204273.71", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01311204273.71"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "https://doi.org/10.1088/0957-4484/17/5/018", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1002168843"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.cplett.2006.05.133", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1002214179"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.jcrysgro.2006.10.209", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1003598155"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2932072", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1003698672"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.jcrysgro.2005.11.079", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1005876613"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s11664-006-0118-9", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1006680677", 
              "https://doi.org/10.1007/s11664-006-0118-9"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s11664-006-0118-9", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1006680677", 
              "https://doi.org/10.1007/s11664-006-0118-9"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1088/0022-3727/41/10/105103", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1009699314"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s11664-006-0102-4", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1014770860", 
              "https://doi.org/10.1007/s11664-006-0102-4"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s11664-006-0102-4", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1014770860", 
              "https://doi.org/10.1007/s11664-006-0102-4"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.jcrysgro.2004.04.080", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1017388412"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1088/0957-4484/17/9/021", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1017972350"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2337853", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1019016796"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1088/0957-4484/16/12/037", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1024481716"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1088/0957-4484/16/12/037", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1024481716"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1002/pssb.200404989", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1027703988"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.apsusc.2004.05.066", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1040103852"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1088/0268-1242/15/7/316", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1042176545"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.sse.2004.08.006", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1051653280"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl0500306", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1053309030"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl0500306", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1053309030"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/ja993713u", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1055873171"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/ja993713u", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1055873171"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl015667d", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1056215192"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl015667d", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1056215192"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl034422t", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1056215628"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl034422t", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1056215628"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl071330l", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1056217337"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl071330l", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1056217337"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.111961", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057659519"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.122012", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057686176"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2115087", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057837931"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2168229", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057841828"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2188589", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057844609"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2206133", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057846794"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2434153", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057856982"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2728782", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057860908"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2736264", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057861603"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2736266", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057861605"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2740324", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057862087"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.2949080", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057886452"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1103/physrevb.67.113313", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1060605939"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1103/physrevb.67.113313", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1060605939"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1137/0111030", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1062837892"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2009-04", 
        "datePublishedReg": "2009-04-01", 
        "description": "We obtained the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current\u2013voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning electron microscopy was used to measure the device dimensions. The nanowires were modeled with cylindrical geometry, and solutions were computed with a nonlinear fit algorithm. Simulations were also performed to verify the model. The carrier concentration was bounded by 6 \u00d7 1017 cm\u22123 and 1.3 \u00d7 1018 cm\u22123, and the mobility was between 300 cm2 V\u22121 s\u22121 and 600 cm2 V\u22121 s\u22121.", 
        "genre": "research_article", 
        "id": "sg:pub.10.1007/s11664-009-0672-z", 
        "inLanguage": [
          "en"
        ], 
        "isAccessibleForFree": false, 
        "isFundedItemOf": [
          {
            "id": "sg:grant.4407175", 
            "type": "MonetaryGrant"
          }
        ], 
        "isPartOf": [
          {
            "id": "sg:journal.1136213", 
            "issn": [
              "0361-5235", 
              "1543-186X"
            ], 
            "name": "Journal of Electronic Materials", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "4", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "38"
          }
        ], 
        "name": "GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements", 
        "pagination": "495-504", 
        "productId": [
          {
            "name": "readcube_id", 
            "type": "PropertyValue", 
            "value": [
              "951c1e7046e19b487c5eac49c2fdf984112e5694b495ff21e2ac787a88371f31"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/s11664-009-0672-z"
            ]
          }, 
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1031300483"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/s11664-009-0672-z", 
          "https://app.dimensions.ai/details/publication/pub.1031300483"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2019-04-11T01:20", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8697_00000589.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "http://link.springer.com/10.1007%2Fs11664-009-0672-z"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0672-z'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0672-z'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0672-z'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s11664-009-0672-z'


     

    This table displays all metadata directly associated to this object as RDF triples.

    205 TRIPLES      21 PREDICATES      62 URIs      19 LITERALS      7 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/s11664-009-0672-z schema:about anzsrc-for:10
    2 anzsrc-for:1007
    3 schema:author N3970f6f1e646430598a306c3e9416bb3
    4 schema:citation sg:pub.10.1007/s11664-006-0102-4
    5 sg:pub.10.1007/s11664-006-0118-9
    6 https://doi.org/10.1002/pssb.200404989
    7 https://doi.org/10.1016/j.apsusc.2004.05.066
    8 https://doi.org/10.1016/j.cplett.2006.05.133
    9 https://doi.org/10.1016/j.jcrysgro.2004.04.080
    10 https://doi.org/10.1016/j.jcrysgro.2005.11.079
    11 https://doi.org/10.1016/j.jcrysgro.2006.10.209
    12 https://doi.org/10.1016/j.sse.2004.08.006
    13 https://doi.org/10.1021/ja993713u
    14 https://doi.org/10.1021/nl015667d
    15 https://doi.org/10.1021/nl034422t
    16 https://doi.org/10.1021/nl0500306
    17 https://doi.org/10.1021/nl071330l
    18 https://doi.org/10.1063/1.111961
    19 https://doi.org/10.1063/1.122012
    20 https://doi.org/10.1063/1.2115087
    21 https://doi.org/10.1063/1.2168229
    22 https://doi.org/10.1063/1.2188589
    23 https://doi.org/10.1063/1.2206133
    24 https://doi.org/10.1063/1.2337853
    25 https://doi.org/10.1063/1.2434153
    26 https://doi.org/10.1063/1.2728782
    27 https://doi.org/10.1063/1.2736264
    28 https://doi.org/10.1063/1.2736266
    29 https://doi.org/10.1063/1.2740324
    30 https://doi.org/10.1063/1.2932072
    31 https://doi.org/10.1063/1.2949080
    32 https://doi.org/10.1088/0022-3727/41/10/105103
    33 https://doi.org/10.1088/0268-1242/15/7/316
    34 https://doi.org/10.1088/0957-4484/16/12/037
    35 https://doi.org/10.1088/0957-4484/17/5/018
    36 https://doi.org/10.1088/0957-4484/17/9/021
    37 https://doi.org/10.1103/physrevb.67.113313
    38 https://doi.org/10.1137/0111030
    39 schema:datePublished 2009-04
    40 schema:datePublishedReg 2009-04-01
    41 schema:description We obtained the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current–voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning electron microscopy was used to measure the device dimensions. The nanowires were modeled with cylindrical geometry, and solutions were computed with a nonlinear fit algorithm. Simulations were also performed to verify the model. The carrier concentration was bounded by 6 × 1017 cm−3 and 1.3 × 1018 cm−3, and the mobility was between 300 cm2 V−1 s−1 and 600 cm2 V−1 s−1.
    42 schema:genre research_article
    43 schema:inLanguage en
    44 schema:isAccessibleForFree false
    45 schema:isPartOf N32071fb02ea547468d478a42b4e2b62f
    46 N922deae514534f2786857345efd2e731
    47 sg:journal.1136213
    48 schema:name GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements
    49 schema:pagination 495-504
    50 schema:productId N028c6ae02dae41699e34212f5c8426cf
    51 N0310217f8aa1421aa4861970d97d9d58
    52 Nd6efccbb43d942ea87c15a8f04a0f334
    53 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031300483
    54 https://doi.org/10.1007/s11664-009-0672-z
    55 schema:sdDatePublished 2019-04-11T01:20
    56 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    57 schema:sdPublisher N3e76e417430440238bcf0d872b855d68
    58 schema:url http://link.springer.com/10.1007%2Fs11664-009-0672-z
    59 sgo:license sg:explorer/license/
    60 sgo:sdDataset articles
    61 rdf:type schema:ScholarlyArticle
    62 N028c6ae02dae41699e34212f5c8426cf schema:name doi
    63 schema:value 10.1007/s11664-009-0672-z
    64 rdf:type schema:PropertyValue
    65 N0310217f8aa1421aa4861970d97d9d58 schema:name readcube_id
    66 schema:value 951c1e7046e19b487c5eac49c2fdf984112e5694b495ff21e2ac787a88371f31
    67 rdf:type schema:PropertyValue
    68 N0f89465b0f2a475f800b34af31fae553 rdf:first sg:person.0601014145.26
    69 rdf:rest N465987092aff4232bc002631a68fc645
    70 N32071fb02ea547468d478a42b4e2b62f schema:volumeNumber 38
    71 rdf:type schema:PublicationVolume
    72 N3970f6f1e646430598a306c3e9416bb3 rdf:first sg:person.015603623717.39
    73 rdf:rest N0f89465b0f2a475f800b34af31fae553
    74 N3e76e417430440238bcf0d872b855d68 schema:name Springer Nature - SN SciGraph project
    75 rdf:type schema:Organization
    76 N465987092aff4232bc002631a68fc645 rdf:first sg:person.01005076443.08
    77 rdf:rest Nb9a339b7db904366a7209fccc1d98cf4
    78 N922deae514534f2786857345efd2e731 schema:issueNumber 4
    79 rdf:type schema:PublicationIssue
    80 Nb9a339b7db904366a7209fccc1d98cf4 rdf:first sg:person.012220660253.16
    81 rdf:rest Nf7fa666bc74a40dabc0e328594914f8b
    82 Nd6efccbb43d942ea87c15a8f04a0f334 schema:name dimensions_id
    83 schema:value pub.1031300483
    84 rdf:type schema:PropertyValue
    85 Nf7fa666bc74a40dabc0e328594914f8b rdf:first sg:person.01311512021.95
    86 rdf:rest Nff849341450d4883b1311aa8fd4b5bc2
    87 Nff849341450d4883b1311aa8fd4b5bc2 rdf:first sg:person.01311204273.71
    88 rdf:rest rdf:nil
    89 anzsrc-for:10 schema:inDefinedTermSet anzsrc-for:
    90 schema:name Technology
    91 rdf:type schema:DefinedTerm
    92 anzsrc-for:1007 schema:inDefinedTermSet anzsrc-for:
    93 schema:name Nanotechnology
    94 rdf:type schema:DefinedTerm
    95 sg:grant.4407175 http://pending.schema.org/fundedItem sg:pub.10.1007/s11664-009-0672-z
    96 rdf:type schema:MonetaryGrant
    97 sg:journal.1136213 schema:issn 0361-5235
    98 1543-186X
    99 schema:name Journal of Electronic Materials
    100 rdf:type schema:Periodical
    101 sg:person.01005076443.08 schema:affiliation https://www.grid.ac/institutes/grid.94225.38
    102 schema:familyName Blanchard
    103 schema:givenName P. T.
    104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01005076443.08
    105 rdf:type schema:Person
    106 sg:person.012220660253.16 schema:affiliation https://www.grid.ac/institutes/grid.94225.38
    107 schema:familyName Harvey
    108 schema:givenName T. E.
    109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012220660253.16
    110 rdf:type schema:Person
    111 sg:person.01311204273.71 schema:affiliation https://www.grid.ac/institutes/grid.94225.38
    112 schema:familyName Sanford
    113 schema:givenName N. A.
    114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01311204273.71
    115 rdf:type schema:Person
    116 sg:person.01311512021.95 schema:affiliation https://www.grid.ac/institutes/grid.94225.38
    117 schema:familyName Sanders
    118 schema:givenName A. W.
    119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01311512021.95
    120 rdf:type schema:Person
    121 sg:person.015603623717.39 schema:affiliation https://www.grid.ac/institutes/grid.94225.38
    122 schema:familyName Mansfield
    123 schema:givenName L. M.
    124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015603623717.39
    125 rdf:type schema:Person
    126 sg:person.0601014145.26 schema:affiliation https://www.grid.ac/institutes/grid.94225.38
    127 schema:familyName Bertness
    128 schema:givenName K. A.
    129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0601014145.26
    130 rdf:type schema:Person
    131 sg:pub.10.1007/s11664-006-0102-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014770860
    132 https://doi.org/10.1007/s11664-006-0102-4
    133 rdf:type schema:CreativeWork
    134 sg:pub.10.1007/s11664-006-0118-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006680677
    135 https://doi.org/10.1007/s11664-006-0118-9
    136 rdf:type schema:CreativeWork
    137 https://doi.org/10.1002/pssb.200404989 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027703988
    138 rdf:type schema:CreativeWork
    139 https://doi.org/10.1016/j.apsusc.2004.05.066 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040103852
    140 rdf:type schema:CreativeWork
    141 https://doi.org/10.1016/j.cplett.2006.05.133 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002214179
    142 rdf:type schema:CreativeWork
    143 https://doi.org/10.1016/j.jcrysgro.2004.04.080 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017388412
    144 rdf:type schema:CreativeWork
    145 https://doi.org/10.1016/j.jcrysgro.2005.11.079 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005876613
    146 rdf:type schema:CreativeWork
    147 https://doi.org/10.1016/j.jcrysgro.2006.10.209 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003598155
    148 rdf:type schema:CreativeWork
    149 https://doi.org/10.1016/j.sse.2004.08.006 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051653280
    150 rdf:type schema:CreativeWork
    151 https://doi.org/10.1021/ja993713u schema:sameAs https://app.dimensions.ai/details/publication/pub.1055873171
    152 rdf:type schema:CreativeWork
    153 https://doi.org/10.1021/nl015667d schema:sameAs https://app.dimensions.ai/details/publication/pub.1056215192
    154 rdf:type schema:CreativeWork
    155 https://doi.org/10.1021/nl034422t schema:sameAs https://app.dimensions.ai/details/publication/pub.1056215628
    156 rdf:type schema:CreativeWork
    157 https://doi.org/10.1021/nl0500306 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053309030
    158 rdf:type schema:CreativeWork
    159 https://doi.org/10.1021/nl071330l schema:sameAs https://app.dimensions.ai/details/publication/pub.1056217337
    160 rdf:type schema:CreativeWork
    161 https://doi.org/10.1063/1.111961 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057659519
    162 rdf:type schema:CreativeWork
    163 https://doi.org/10.1063/1.122012 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057686176
    164 rdf:type schema:CreativeWork
    165 https://doi.org/10.1063/1.2115087 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057837931
    166 rdf:type schema:CreativeWork
    167 https://doi.org/10.1063/1.2168229 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057841828
    168 rdf:type schema:CreativeWork
    169 https://doi.org/10.1063/1.2188589 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057844609
    170 rdf:type schema:CreativeWork
    171 https://doi.org/10.1063/1.2206133 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057846794
    172 rdf:type schema:CreativeWork
    173 https://doi.org/10.1063/1.2337853 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019016796
    174 rdf:type schema:CreativeWork
    175 https://doi.org/10.1063/1.2434153 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057856982
    176 rdf:type schema:CreativeWork
    177 https://doi.org/10.1063/1.2728782 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057860908
    178 rdf:type schema:CreativeWork
    179 https://doi.org/10.1063/1.2736264 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057861603
    180 rdf:type schema:CreativeWork
    181 https://doi.org/10.1063/1.2736266 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057861605
    182 rdf:type schema:CreativeWork
    183 https://doi.org/10.1063/1.2740324 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057862087
    184 rdf:type schema:CreativeWork
    185 https://doi.org/10.1063/1.2932072 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003698672
    186 rdf:type schema:CreativeWork
    187 https://doi.org/10.1063/1.2949080 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057886452
    188 rdf:type schema:CreativeWork
    189 https://doi.org/10.1088/0022-3727/41/10/105103 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009699314
    190 rdf:type schema:CreativeWork
    191 https://doi.org/10.1088/0268-1242/15/7/316 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042176545
    192 rdf:type schema:CreativeWork
    193 https://doi.org/10.1088/0957-4484/16/12/037 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024481716
    194 rdf:type schema:CreativeWork
    195 https://doi.org/10.1088/0957-4484/17/5/018 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002168843
    196 rdf:type schema:CreativeWork
    197 https://doi.org/10.1088/0957-4484/17/9/021 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017972350
    198 rdf:type schema:CreativeWork
    199 https://doi.org/10.1103/physrevb.67.113313 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060605939
    200 rdf:type schema:CreativeWork
    201 https://doi.org/10.1137/0111030 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062837892
    202 rdf:type schema:CreativeWork
    203 https://www.grid.ac/institutes/grid.94225.38 schema:alternateName National Institute of Standards and Technology
    204 schema:name Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA
    205 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...