Effect of Protective Layer and Etch Process on Silicon Molded Micro Peltier Arrays View Full Text


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Article Info

DATE

2009-07

AUTHORS

M. Tonosaki, Y. Ishida, H. Ryoson

ABSTRACT

We used silicon molding and examined the protective layer on a silicon molded Peltier array. Both a large p-type array and n-type array were created with the protective layer. Because the conventional bismuth-antimony-telluride (BiSbTe) alloys react with XeF2 etching gas rapidly, we need to place the protective layer at the interface between the silicon and the thermoelectric material using the water vapor thermal oxidization method. As the xenon difluoride selective etching ratio of silicon and SiO2 is about 100:1, the protective layer is damaged if the removal ratio of silicon is high and the etching process time is long. Next we examined a new method involving both an anisotropic process using deep reactive ion etching (DRIE) and an isotropic process using XeF2 etching, and we formulated an etching process that causes no damage to the protective layer. More... »

PAGES

968-973

Journal

TITLE

Journal of Electronic Materials

ISSUE

7

VOLUME

38

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-009-0671-0

DOI

http://dx.doi.org/10.1007/s11664-009-0671-0

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012592471


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Sony Corporation, Core Device Development Group, 5-1-12, Kitashinagawa, Shinagawa-ku, 141-0001, Tokyo, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tonosaki", 
        "givenName": "M.", 
        "id": "sg:person.011302001347.41", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011302001347.41"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Sony Corporation, Core Device Development Group, 5-1-12, Kitashinagawa, Shinagawa-ku, 141-0001, Tokyo, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ishida", 
        "givenName": "Y.", 
        "id": "sg:person.015640274736.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015640274736.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Sony Corporation, Core Device Development Group, 5-1-12, Kitashinagawa, Shinagawa-ku, 141-0001, Tokyo, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ryoson", 
        "givenName": "H.", 
        "id": "sg:person.010530164536.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010530164536.73"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/s0924-4247(03)00369-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050133826"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0924-4247(03)00369-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050133826"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.119861", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057684046"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/jmems.2004.828740", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061289902"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/led.2006.873424", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061353363"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2009-07", 
    "datePublishedReg": "2009-07-01", 
    "description": "We used silicon molding and examined the protective layer on a silicon molded Peltier array. Both a large p-type array and n-type array were created with the protective layer. Because the conventional bismuth-antimony-telluride (BiSbTe) alloys react with XeF2 etching gas rapidly, we need to place the protective layer at the interface between the silicon and the thermoelectric material using the water vapor thermal oxidization method. As the xenon difluoride selective etching ratio of silicon and SiO2 is about 100:1, the protective layer is damaged if the removal ratio of silicon is high and the etching process time is long. Next we examined a new method involving both an anisotropic process using deep reactive ion etching (DRIE) and an isotropic process using XeF2 etching, and we formulated an etching process that causes no damage to the protective layer.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s11664-009-0671-0", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136213", 
        "issn": [
          "0361-5235", 
          "1543-186X"
        ], 
        "name": "Journal of Electronic Materials", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "38"
      }
    ], 
    "name": "Effect of Protective Layer and Etch Process on Silicon Molded Micro Peltier Arrays", 
    "pagination": "968-973", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "3bfe2eee31e066f32e5c935540b14d17532b3896c658b20e3f18f5d029e6c71f"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11664-009-0671-0"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1012592471"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11664-009-0671-0", 
      "https://app.dimensions.ai/details/publication/pub.1012592471"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T15:53", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8664_00000520.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2Fs11664-009-0671-0"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

87 TRIPLES      21 PREDICATES      31 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11664-009-0671-0 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N9b394adb16b044dca7b377ba82216350
4 schema:citation https://doi.org/10.1016/s0924-4247(03)00369-8
5 https://doi.org/10.1063/1.119861
6 https://doi.org/10.1109/jmems.2004.828740
7 https://doi.org/10.1109/led.2006.873424
8 schema:datePublished 2009-07
9 schema:datePublishedReg 2009-07-01
10 schema:description We used silicon molding and examined the protective layer on a silicon molded Peltier array. Both a large p-type array and n-type array were created with the protective layer. Because the conventional bismuth-antimony-telluride (BiSbTe) alloys react with XeF2 etching gas rapidly, we need to place the protective layer at the interface between the silicon and the thermoelectric material using the water vapor thermal oxidization method. As the xenon difluoride selective etching ratio of silicon and SiO2 is about 100:1, the protective layer is damaged if the removal ratio of silicon is high and the etching process time is long. Next we examined a new method involving both an anisotropic process using deep reactive ion etching (DRIE) and an isotropic process using XeF2 etching, and we formulated an etching process that causes no damage to the protective layer.
11 schema:genre research_article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf Nb19ffce26ab84989b378d559cfa24cd4
15 Nc9061862ee10466bba8dff756baedc61
16 sg:journal.1136213
17 schema:name Effect of Protective Layer and Etch Process on Silicon Molded Micro Peltier Arrays
18 schema:pagination 968-973
19 schema:productId N73dd925e3e504274947eb4157309a6ad
20 N83b369339173480da175ae8de8ab2f34
21 Ne9cb67ab91664a61b987599376a839a8
22 schema:sameAs https://app.dimensions.ai/details/publication/pub.1012592471
23 https://doi.org/10.1007/s11664-009-0671-0
24 schema:sdDatePublished 2019-04-10T15:53
25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
26 schema:sdPublisher N1d9926c69902488cb70112db5bf717b5
27 schema:url http://link.springer.com/10.1007%2Fs11664-009-0671-0
28 sgo:license sg:explorer/license/
29 sgo:sdDataset articles
30 rdf:type schema:ScholarlyArticle
31 N1d9926c69902488cb70112db5bf717b5 schema:name Springer Nature - SN SciGraph project
32 rdf:type schema:Organization
33 N3485fef3a4084a5dad000fe20fd94754 rdf:first sg:person.010530164536.73
34 rdf:rest rdf:nil
35 N73dd925e3e504274947eb4157309a6ad schema:name doi
36 schema:value 10.1007/s11664-009-0671-0
37 rdf:type schema:PropertyValue
38 N83b369339173480da175ae8de8ab2f34 schema:name dimensions_id
39 schema:value pub.1012592471
40 rdf:type schema:PropertyValue
41 N9b394adb16b044dca7b377ba82216350 rdf:first sg:person.011302001347.41
42 rdf:rest Nf8c49510fc244413b72d767312523c48
43 Nb19ffce26ab84989b378d559cfa24cd4 schema:volumeNumber 38
44 rdf:type schema:PublicationVolume
45 Nc9061862ee10466bba8dff756baedc61 schema:issueNumber 7
46 rdf:type schema:PublicationIssue
47 Ne9cb67ab91664a61b987599376a839a8 schema:name readcube_id
48 schema:value 3bfe2eee31e066f32e5c935540b14d17532b3896c658b20e3f18f5d029e6c71f
49 rdf:type schema:PropertyValue
50 Nf8c49510fc244413b72d767312523c48 rdf:first sg:person.015640274736.09
51 rdf:rest N3485fef3a4084a5dad000fe20fd94754
52 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
53 schema:name Engineering
54 rdf:type schema:DefinedTerm
55 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
56 schema:name Materials Engineering
57 rdf:type schema:DefinedTerm
58 sg:journal.1136213 schema:issn 0361-5235
59 1543-186X
60 schema:name Journal of Electronic Materials
61 rdf:type schema:Periodical
62 sg:person.010530164536.73 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
63 schema:familyName Ryoson
64 schema:givenName H.
65 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010530164536.73
66 rdf:type schema:Person
67 sg:person.011302001347.41 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
68 schema:familyName Tonosaki
69 schema:givenName M.
70 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011302001347.41
71 rdf:type schema:Person
72 sg:person.015640274736.09 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
73 schema:familyName Ishida
74 schema:givenName Y.
75 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015640274736.09
76 rdf:type schema:Person
77 https://doi.org/10.1016/s0924-4247(03)00369-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050133826
78 rdf:type schema:CreativeWork
79 https://doi.org/10.1063/1.119861 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057684046
80 rdf:type schema:CreativeWork
81 https://doi.org/10.1109/jmems.2004.828740 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061289902
82 rdf:type schema:CreativeWork
83 https://doi.org/10.1109/led.2006.873424 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061353363
84 rdf:type schema:CreativeWork
85 https://www.grid.ac/institutes/grid.410792.9 schema:alternateName Sony (Japan)
86 schema:name Sony Corporation, Core Device Development Group, 5-1-12, Kitashinagawa, Shinagawa-ku, 141-0001, Tokyo, Japan
87 rdf:type schema:Organization
 




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