Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing View Full Text


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Article Info

DATE

2009-04

AUTHORS

S.I. Maximenko, J.A. Freitas, N.Y. Garces, E.R. Glaser, M.A. Fanton

ABSTRACT

The influence of postgrowth high-temperature anneals between 1400°C and 2400°C on the behavior of the D1 center in semi-insulating 4H-SiC was studied by photoluminescence. The optical signature of D1 was observed up to 2400°C with intensity maxima at 1700°C and 2200°C. It was also found that changes in the postannealing cooling rate drastically influence the behavior of the D1 center and the concentrations of the VC, VSi, VC–VSi, and VC–CSi lattice defects observed from electron paramagnetic resonance experiments. The change in intensity of the D1 defect has some correlation with the intensity change of the VC–VSi pair defect at temperatures above 1900°C. In addition, infrared photoluminescence spectroscopy studies showed that changes in the intensity of the D1 defect at 2100°C to 2400°C annealing temperatures and variable cool-down rates have close correlation with intensity changes of the UD2 defect. More... »

PAGES

551

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-008-0607-0

DOI

http://dx.doi.org/10.1007/s11664-008-0607-0

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027517316


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