Identification of a Three-Site Defect in Semi-Insulating 4H-SiC View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-04

AUTHORS

N. Y. Garces, W. E. Carlos, E. R. Glaser, M. A. Fanton

ABSTRACT

Using electron paramagnetic resonance (EPR), we observe a defect that increases significantly with annealing temperature. This spin S = 1 defect is characterized by gx ≈ gy ≈ gz = 2.0056 and a fine structure splitting D ∼ 100 G whose principal axis lies in a plane perpendicular to the c-axis. Also resolved are several hyperfine interactions with the low abundance 29Si and 13C neighboring nuclei. A careful analysis of the intensity of these hyperfine lines allows a precise determination of the identity and the quantity of interacting nuclei. This center is diamagnetic in the ground state but can be excited into a paramagnetic triplet state by sub-bandgap light. We identify this new defect as a three-site vacancy involving VC-VSi-VC. The angular dependence of the 13C hyperfine interaction supports the proposed model. These may be the simplest of a family of more complex and extended defects that play a role in the semi-insulating (SI) character of SiC. More... »

PAGES

268-271

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-006-0043-y

DOI

http://dx.doi.org/10.1007/s11664-006-0043-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044272110


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