Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-05

AUTHORS

N. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. P. Soshnikov, V. A. Shchukin, V. M. Ustinov, A. Yu. Egorov, A. E. Zukov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. P. Semyagin, D. Bimberg, Zh. I. Alferov

ABSTRACT

GaAs-AlAs corrugated superlattices (CSL) are formed on spontaneously nanofaceted (311)A surfaces. Using high-resolution transmission electron microscopy (HRTEM) along the zone axis with an appropriate image evaluation technique to enhance the contract between GaAs and AlAs we found two distinct lateral periodicities along the directions for two different CSL layer thickness regimes. For multilayer deposition with GaAs layer thickness exceeding 1 nm the lateral periodicity of 3.2 nm is clearly revealed. The contrast originates from the thickness modulation of both AlAs and GaAs layers with a period of 3.2 nm in the direction. The corrugation height is about 1 nm and it is symmetric for both upper and lower GaAs-AlAs interfaces. Thicker sections of the thickness-modulated AlAs and GaAs layers of the CSL are shifted by a half period with respect to each other. In the regime when the GaAs deposited average thickness is below 1 nm, which is necessary for complete coverage of the AlAs surface, a lateral periodicity of ≈1.5–2 nm is additionally revealed. We attribute this effect to the formation of local GaAs clusters dispersed on a corrugated (311)A AlAs surface resulting in a local phase reversal of the AlAs surface in their vicinity upon subsequent overgrowth. This reversal can be explained by the same effect as the phase shift of the surface corrugation upon heteroepitaxy on (311)A. In our model AlAs does not wet the GaAs cluster surface, unless different more energetically favorable scenario is possible. This causes accumulation of AlAs in the vicinity of the GaAs cluster and, as a result, the local phase reversal of the AlAs surface. The AlAs corrugated surface domains with different phases coexist on the surface resulting in an additional periodicity revealed in the HREM contrast modulation. Additionally HRTEM studies indicate that the AlAs-GaAs interface inclination angles in both regimes are 40° and 140° with respect to the flat (311) surface in an argreement with the {331} facet geometry model proposed by R. Nötzel, N.N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog. More... »

PAGES

463-470

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-001-0084-1

DOI

http://dx.doi.org/10.1007/s11664-001-0084-1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049609546


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250 schema:name Siberian Division of the Russian Academy of Sciences, Novosibirsk, Institute of Semiconductor Physics, 630090, Russia
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252 https://www.grid.ac/institutes/grid.6734.6 schema:alternateName Technical University of Berlin
253 schema:name Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, Germany
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256 schema:name Laboratorium für Elektronenmikroskopie, Universität Karlsruhe (TH), Kaiserstr. 12, 76128, Karlsruhe, Germany
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