Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-06

AUTHORS

Young-Ho Kim, Soo-Ho Bae, Hee Chul Lee, Choong Ki Kim

ABSTRACT

Effects of fixed charge on R0A value of ZnS-passivated x=0.3 HgCdTe n-on-p diode are explained as a shunt resistance that affects current-voltage (I-V) and dynamic resistance-voltage (Rd-V) characteristics. The fixed charge of 1×1011/cm2 to 2 × 1011/cm2 which is usually obtained with ZnS passivation makes the surface weakly inverted and reduces HgCdTe diode R0A value owing to the short generation lifetime of HgCdTe substrate. The gate-controlled diode and specially fabricated diode are used to explain the surface leakage current in the weak inversion and charge sheet model is used to explain the characteristics. It is found that the surface leakage current by the inverted channel in the weak inversion can reduce R0A more than other currents such as the generation current and tunneling current which are usually used to explain the surface leakage current of HgCdTe diode. More... »

PAGES

832-836

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11664-000-0233-y

DOI

http://dx.doi.org/10.1007/s11664-000-0233-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047826365


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "ON Semiconductor (South Korea)", 
          "id": "https://www.grid.ac/institutes/grid.481639.1", 
          "name": [
            "Department of Electrical Engineering, and Center for Electro-Optics, Korea Advanced Institute of Science and Technology, 373-1 Kusong-Dong, Yusong-Gu, 305-701, Taejon, Korea", 
            "Semiconductor, R&D Center, KEC Research Institute of Technology, Korea Electronics Co. Ltd., 149, Gongdan, 1-Dong, 730-031, Kumi, Kyungbuk-Province, Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "Young-Ho", 
        "id": "sg:person.015560553333.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015560553333.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Korea Advanced Institute of Science and Technology", 
          "id": "https://www.grid.ac/institutes/grid.37172.30", 
          "name": [
            "Department of Electrical Engineering, and Center for Electro-Optics, Korea Advanced Institute of Science and Technology, 373-1 Kusong-Dong, Yusong-Gu, 305-701, Taejon, Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bae", 
        "givenName": "Soo-Ho", 
        "id": "sg:person.015240642227.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015240642227.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Korea Advanced Institute of Science and Technology", 
          "id": "https://www.grid.ac/institutes/grid.37172.30", 
          "name": [
            "Department of Electrical Engineering, and Center for Electro-Optics, Korea Advanced Institute of Science and Technology, 373-1 Kusong-Dong, Yusong-Gu, 305-701, Taejon, Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lee", 
        "givenName": "Hee Chul", 
        "id": "sg:person.012560624347.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012560624347.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Korea Advanced Institute of Science and Technology", 
          "id": "https://www.grid.ac/institutes/grid.37172.30", 
          "name": [
            "Department of Electrical Engineering, and Center for Electro-Optics, Korea Advanced Institute of Science and Technology, 373-1 Kusong-Dong, Yusong-Gu, 305-701, Taejon, Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "Choong Ki", 
        "id": "sg:person.014146716743.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014146716743.51"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1088/0268-1242/9/3/009", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026781669"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11664-997-0208-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028995567", 
          "https://doi.org/10.1007/s11664-997-0208-3"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11664-998-0338-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037396092", 
          "https://doi.org/10.1007/s11664-998-0338-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1149/1.2095943", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050213287"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02653070", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050682864", 
          "https://doi.org/10.1007/bf02653070"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02653070", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050682864", 
          "https://doi.org/10.1007/bf02653070"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.334259", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057939104"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/t-ed.1986.22698", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061464335"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.572215", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062182262"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.572216", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062182263"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.573200", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062183247"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.576202", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062186249"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.576215", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062186262"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.576942", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062186989"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2000-06", 
    "datePublishedReg": "2000-06-01", 
    "description": "Effects of fixed charge on R0A value of ZnS-passivated x=0.3 HgCdTe n-on-p diode are explained as a shunt resistance that affects current-voltage (I-V) and dynamic resistance-voltage (Rd-V) characteristics. The fixed charge of 1\u00d71011/cm2 to 2 \u00d7 1011/cm2 which is usually obtained with ZnS passivation makes the surface weakly inverted and reduces HgCdTe diode R0A value owing to the short generation lifetime of HgCdTe substrate. The gate-controlled diode and specially fabricated diode are used to explain the surface leakage current in the weak inversion and charge sheet model is used to explain the characteristics. It is found that the surface leakage current by the inverted channel in the weak inversion can reduce R0A more than other currents such as the generation current and tunneling current which are usually used to explain the surface leakage current of HgCdTe diode.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s11664-000-0233-y", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136213", 
        "issn": [
          "0361-5235", 
          "1543-186X"
        ], 
        "name": "Journal of Electronic Materials", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "29"
      }
    ], 
    "name": "Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion", 
    "pagination": "832-836", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e3d53d5dca6546938af3a24ee95dc0215c12a5c5110c508fe89b04ec9806e30a"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11664-000-0233-y"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1047826365"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11664-000-0233-y", 
      "https://app.dimensions.ai/details/publication/pub.1047826365"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T15:54", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8664_00000524.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2Fs11664-000-0233-y"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

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This table displays all metadata directly associated to this object as RDF triples.

128 TRIPLES      21 PREDICATES      40 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11664-000-0233-y schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nc9afbb4134f74407b67e5e6e9aa9d29e
4 schema:citation sg:pub.10.1007/bf02653070
5 sg:pub.10.1007/s11664-997-0208-3
6 sg:pub.10.1007/s11664-998-0338-2
7 https://doi.org/10.1063/1.334259
8 https://doi.org/10.1088/0268-1242/9/3/009
9 https://doi.org/10.1109/t-ed.1986.22698
10 https://doi.org/10.1116/1.572215
11 https://doi.org/10.1116/1.572216
12 https://doi.org/10.1116/1.573200
13 https://doi.org/10.1116/1.576202
14 https://doi.org/10.1116/1.576215
15 https://doi.org/10.1116/1.576942
16 https://doi.org/10.1149/1.2095943
17 schema:datePublished 2000-06
18 schema:datePublishedReg 2000-06-01
19 schema:description Effects of fixed charge on R0A value of ZnS-passivated x=0.3 HgCdTe n-on-p diode are explained as a shunt resistance that affects current-voltage (I-V) and dynamic resistance-voltage (Rd-V) characteristics. The fixed charge of 1×1011/cm2 to 2 × 1011/cm2 which is usually obtained with ZnS passivation makes the surface weakly inverted and reduces HgCdTe diode R0A value owing to the short generation lifetime of HgCdTe substrate. The gate-controlled diode and specially fabricated diode are used to explain the surface leakage current in the weak inversion and charge sheet model is used to explain the characteristics. It is found that the surface leakage current by the inverted channel in the weak inversion can reduce R0A more than other currents such as the generation current and tunneling current which are usually used to explain the surface leakage current of HgCdTe diode.
20 schema:genre research_article
21 schema:inLanguage en
22 schema:isAccessibleForFree false
23 schema:isPartOf N83ca5d463681410f918c9f1d99fcaf54
24 Na258694c37ca40858742e7cc60aa0d8e
25 sg:journal.1136213
26 schema:name Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion
27 schema:pagination 832-836
28 schema:productId N166925573dba408eb869804ca591e9f5
29 N24278ce8d97c415cb880504c720e80a7
30 N4cd7baaa8e524e87864ff36d1bd597b5
31 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047826365
32 https://doi.org/10.1007/s11664-000-0233-y
33 schema:sdDatePublished 2019-04-10T15:54
34 schema:sdLicense https://scigraph.springernature.com/explorer/license/
35 schema:sdPublisher Nb7a0aa286fb5411ab1cd1e4fdf9d8f2e
36 schema:url http://link.springer.com/10.1007%2Fs11664-000-0233-y
37 sgo:license sg:explorer/license/
38 sgo:sdDataset articles
39 rdf:type schema:ScholarlyArticle
40 N166925573dba408eb869804ca591e9f5 schema:name dimensions_id
41 schema:value pub.1047826365
42 rdf:type schema:PropertyValue
43 N24278ce8d97c415cb880504c720e80a7 schema:name doi
44 schema:value 10.1007/s11664-000-0233-y
45 rdf:type schema:PropertyValue
46 N2dce023446cc4e70824a2ad319743776 rdf:first sg:person.014146716743.51
47 rdf:rest rdf:nil
48 N4cd7baaa8e524e87864ff36d1bd597b5 schema:name readcube_id
49 schema:value e3d53d5dca6546938af3a24ee95dc0215c12a5c5110c508fe89b04ec9806e30a
50 rdf:type schema:PropertyValue
51 N5133159ee8b34e1f82923b6caae78169 rdf:first sg:person.012560624347.73
52 rdf:rest N2dce023446cc4e70824a2ad319743776
53 N83ca5d463681410f918c9f1d99fcaf54 schema:issueNumber 6
54 rdf:type schema:PublicationIssue
55 Na258694c37ca40858742e7cc60aa0d8e schema:volumeNumber 29
56 rdf:type schema:PublicationVolume
57 Nb7a0aa286fb5411ab1cd1e4fdf9d8f2e schema:name Springer Nature - SN SciGraph project
58 rdf:type schema:Organization
59 Nc9afbb4134f74407b67e5e6e9aa9d29e rdf:first sg:person.015560553333.54
60 rdf:rest Nebe2982eef9f449bb0e810028f49652a
61 Nebe2982eef9f449bb0e810028f49652a rdf:first sg:person.015240642227.61
62 rdf:rest N5133159ee8b34e1f82923b6caae78169
63 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
64 schema:name Engineering
65 rdf:type schema:DefinedTerm
66 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
67 schema:name Materials Engineering
68 rdf:type schema:DefinedTerm
69 sg:journal.1136213 schema:issn 0361-5235
70 1543-186X
71 schema:name Journal of Electronic Materials
72 rdf:type schema:Periodical
73 sg:person.012560624347.73 schema:affiliation https://www.grid.ac/institutes/grid.37172.30
74 schema:familyName Lee
75 schema:givenName Hee Chul
76 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012560624347.73
77 rdf:type schema:Person
78 sg:person.014146716743.51 schema:affiliation https://www.grid.ac/institutes/grid.37172.30
79 schema:familyName Kim
80 schema:givenName Choong Ki
81 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014146716743.51
82 rdf:type schema:Person
83 sg:person.015240642227.61 schema:affiliation https://www.grid.ac/institutes/grid.37172.30
84 schema:familyName Bae
85 schema:givenName Soo-Ho
86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015240642227.61
87 rdf:type schema:Person
88 sg:person.015560553333.54 schema:affiliation https://www.grid.ac/institutes/grid.481639.1
89 schema:familyName Kim
90 schema:givenName Young-Ho
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015560553333.54
92 rdf:type schema:Person
93 sg:pub.10.1007/bf02653070 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050682864
94 https://doi.org/10.1007/bf02653070
95 rdf:type schema:CreativeWork
96 sg:pub.10.1007/s11664-997-0208-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028995567
97 https://doi.org/10.1007/s11664-997-0208-3
98 rdf:type schema:CreativeWork
99 sg:pub.10.1007/s11664-998-0338-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037396092
100 https://doi.org/10.1007/s11664-998-0338-2
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1063/1.334259 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057939104
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1088/0268-1242/9/3/009 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026781669
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1109/t-ed.1986.22698 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061464335
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1116/1.572215 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062182262
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1116/1.572216 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062182263
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1116/1.573200 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062183247
113 rdf:type schema:CreativeWork
114 https://doi.org/10.1116/1.576202 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062186249
115 rdf:type schema:CreativeWork
116 https://doi.org/10.1116/1.576215 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062186262
117 rdf:type schema:CreativeWork
118 https://doi.org/10.1116/1.576942 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062186989
119 rdf:type schema:CreativeWork
120 https://doi.org/10.1149/1.2095943 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050213287
121 rdf:type schema:CreativeWork
122 https://www.grid.ac/institutes/grid.37172.30 schema:alternateName Korea Advanced Institute of Science and Technology
123 schema:name Department of Electrical Engineering, and Center for Electro-Optics, Korea Advanced Institute of Science and Technology, 373-1 Kusong-Dong, Yusong-Gu, 305-701, Taejon, Korea
124 rdf:type schema:Organization
125 https://www.grid.ac/institutes/grid.481639.1 schema:alternateName ON Semiconductor (South Korea)
126 schema:name Department of Electrical Engineering, and Center for Electro-Optics, Korea Advanced Institute of Science and Technology, 373-1 Kusong-Dong, Yusong-Gu, 305-701, Taejon, Korea
127 Semiconductor, R&D Center, KEC Research Institute of Technology, Korea Electronics Co. Ltd., 149, Gongdan, 1-Dong, 730-031, Kumi, Kyungbuk-Province, Korea
128 rdf:type schema:Organization
 




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