Development of a diffusion barrier layer for silicon and carbon in molybdenum—a physical vapor deposition approach View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-03

AUTHORS

S. Govindarajan, J. J. Moore, J. Disam, C. Suryanarayana

ABSTRACT

During the last 2 decades, research on high-temperature, oxidation-resistant coating systems for refractory metals has focused on a variety of silicides (e.g., Mo and Ta silicides), due to their excellent resistance to oxidation. However, commercialization efforts have been thwarted in large measure due to the diffusion of silicon from the coating to the substrate, resulting not only in the depletion of silicon from the coating, but also the formation of less oxidation-resistant subsilicides. Consequently, the development of a high-temperature, diffusion barrier layer for silicon has assumed considerable importance. Furthermore, introduction of carbon in the system, e.g., during the synthesis of MoSi2−SiC composite thin films on molybdenum substrates, results in the diffusion of both silicon and carbon into the substrate, necessitating the development of a barrier layer for both elements. This article examines the possibility of using a novel approach—that of reactive radio frequency (RF) sputtering—for synthesizing a diffusion barrier (based on the Mo−Si−C−N quaternary system) for both silicon and carbon. It is shown that reactive rf magnetron sputtering of a composite target (MoSi2 +1.96 moles SiC) in an argon-nitrogen atmosphere results in the formation of an amorphous layer, of an as-yet undetermined stoichiometry, preventing the diffusion of both silicon and carbon into the molybdenum substrate. This layer is thermally and chemically stable up to at least 1260 °C. More... »

PAGES

799-806

References to SciGraph publications

  • 1981-05. Metastable structures in metallurgy in METALLURGICAL TRANSACTIONS A
  • 1993. Sputter Deposition and Characterization of MoSi2/SiC Composite Coatings in MECHANICAL PROPERTIES AND DEFORMATION BEHAVIOR OF MATERIALS HAVING ULTRA-FINE MICROSTRUCTURES
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s11661-999-1012-x

    DOI

    http://dx.doi.org/10.1007/s11661-999-1012-x

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1051528952


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Materials Engineering", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "name": [
                "Whiteoak Semiconductors Ltd., 23150, Sandston, VA"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Govindarajan", 
            "givenName": "S.", 
            "id": "sg:person.016555125701.34", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016555125701.34"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Colorado School of Mines", 
              "id": "https://www.grid.ac/institutes/grid.254549.b", 
              "name": [
                "Advanced Coatings and Surface Engineering Laboratory (ACSEL), Colorado School of Mines, 80401-1887, Golden, CO", 
                "Department of Metallurgical and Materials Engineering, Colorado School of Mines, 80401-1887, Golden, CO"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Moore", 
            "givenName": "J. J.", 
            "id": "sg:person.0641164054.59", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0641164054.59"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Schott (Germany)", 
              "id": "https://www.grid.ac/institutes/grid.425878.4", 
              "name": [
                "Service Division Metals, Ceramics & Refractories, Glassmelting Technology, Mainz, Germany", 
                "Schott Glaswerke, D-55014, Mainz, Germany"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Disam", 
            "givenName": "J.", 
            "id": "sg:person.016667007201.91", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016667007201.91"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "name": [
                "Department of Metallurgical and Materials Engineering, ACSEL, 80401-1887, Golden, CO"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Suryanarayana", 
            "givenName": "C.", 
            "id": "sg:person.014666237315.02", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014666237315.02"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "https://doi.org/10.1016/0257-8972(95)02524-3", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1000201027"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0921-5093(92)90313-p", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1006784110"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0921-5093(92)90313-p", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1006784110"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0257-8972(94)90136-8", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1013251026"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0257-8972(94)90136-8", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1013251026"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0022-5088(76)90005-9", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1034704042"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0022-5088(76)90005-9", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1034704042"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/bf02648333", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1035025556", 
              "https://doi.org/10.1007/bf02648333"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/bf02648333", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1035025556", 
              "https://doi.org/10.1007/bf02648333"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1080/01418619508236219", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1039983220"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/978-94-011-1765-4_31", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1041284427", 
              "https://doi.org/10.1007/978-94-011-1765-4_31"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/s0257-8972(96)03031-9", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1046236590"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0921-5093(92)90308-n", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1049675361"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/0921-5093(92)90308-n", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1049675361"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1557/s0883769400037519", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1067962879"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "1999-03", 
        "datePublishedReg": "1999-03-01", 
        "description": "During the last 2 decades, research on high-temperature, oxidation-resistant coating systems for refractory metals has focused on a variety of silicides (e.g., Mo and Ta silicides), due to their excellent resistance to oxidation. However, commercialization efforts have been thwarted in large measure due to the diffusion of silicon from the coating to the substrate, resulting not only in the depletion of silicon from the coating, but also the formation of less oxidation-resistant subsilicides. Consequently, the development of a high-temperature, diffusion barrier layer for silicon has assumed considerable importance. Furthermore, introduction of carbon in the system, e.g., during the synthesis of MoSi2\u2212SiC composite thin films on molybdenum substrates, results in the diffusion of both silicon and carbon into the substrate, necessitating the development of a barrier layer for both elements. This article examines the possibility of using a novel approach\u2014that of reactive radio frequency (RF) sputtering\u2014for synthesizing a diffusion barrier (based on the Mo\u2212Si\u2212C\u2212N quaternary system) for both silicon and carbon. It is shown that reactive rf magnetron sputtering of a composite target (MoSi2 +1.96 moles SiC) in an argon-nitrogen atmosphere results in the formation of an amorphous layer, of an as-yet undetermined stoichiometry, preventing the diffusion of both silicon and carbon into the molybdenum substrate. This layer is thermally and chemically stable up to at least 1260 \u00b0C.", 
        "genre": "research_article", 
        "id": "sg:pub.10.1007/s11661-999-1012-x", 
        "inLanguage": [
          "en"
        ], 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1136292", 
            "issn": [
              "1073-5623", 
              "1543-1940"
            ], 
            "name": "Metallurgical and Materials Transactions A", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "13", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "30"
          }
        ], 
        "name": "Development of a diffusion barrier layer for silicon and carbon in molybdenum\u2014a physical vapor deposition approach", 
        "pagination": "799-806", 
        "productId": [
          {
            "name": "readcube_id", 
            "type": "PropertyValue", 
            "value": [
              "f5765818d34e43ccdb92c0a4f5f6cc0c43b66dae983b90cc51869f58f476cbfe"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/s11661-999-1012-x"
            ]
          }, 
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1051528952"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/s11661-999-1012-x", 
          "https://app.dimensions.ai/details/publication/pub.1051528952"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2019-04-10T15:04", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8663_00000524.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "http://link.springer.com/10.1007%2Fs11661-999-1012-x"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11661-999-1012-x'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s11661-999-1012-x'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s11661-999-1012-x'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s11661-999-1012-x'


     

    This table displays all metadata directly associated to this object as RDF triples.

    123 TRIPLES      21 PREDICATES      37 URIs      19 LITERALS      7 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/s11661-999-1012-x schema:about anzsrc-for:09
    2 anzsrc-for:0912
    3 schema:author Nb61672dbc35444a7a930d2e11d36a351
    4 schema:citation sg:pub.10.1007/978-94-011-1765-4_31
    5 sg:pub.10.1007/bf02648333
    6 https://doi.org/10.1016/0022-5088(76)90005-9
    7 https://doi.org/10.1016/0257-8972(94)90136-8
    8 https://doi.org/10.1016/0257-8972(95)02524-3
    9 https://doi.org/10.1016/0921-5093(92)90308-n
    10 https://doi.org/10.1016/0921-5093(92)90313-p
    11 https://doi.org/10.1016/s0257-8972(96)03031-9
    12 https://doi.org/10.1080/01418619508236219
    13 https://doi.org/10.1557/s0883769400037519
    14 schema:datePublished 1999-03
    15 schema:datePublishedReg 1999-03-01
    16 schema:description During the last 2 decades, research on high-temperature, oxidation-resistant coating systems for refractory metals has focused on a variety of silicides (e.g., Mo and Ta silicides), due to their excellent resistance to oxidation. However, commercialization efforts have been thwarted in large measure due to the diffusion of silicon from the coating to the substrate, resulting not only in the depletion of silicon from the coating, but also the formation of less oxidation-resistant subsilicides. Consequently, the development of a high-temperature, diffusion barrier layer for silicon has assumed considerable importance. Furthermore, introduction of carbon in the system, e.g., during the synthesis of MoSi2−SiC composite thin films on molybdenum substrates, results in the diffusion of both silicon and carbon into the substrate, necessitating the development of a barrier layer for both elements. This article examines the possibility of using a novel approach—that of reactive radio frequency (RF) sputtering—for synthesizing a diffusion barrier (based on the Mo−Si−C−N quaternary system) for both silicon and carbon. It is shown that reactive rf magnetron sputtering of a composite target (MoSi2 +1.96 moles SiC) in an argon-nitrogen atmosphere results in the formation of an amorphous layer, of an as-yet undetermined stoichiometry, preventing the diffusion of both silicon and carbon into the molybdenum substrate. This layer is thermally and chemically stable up to at least 1260 °C.
    17 schema:genre research_article
    18 schema:inLanguage en
    19 schema:isAccessibleForFree false
    20 schema:isPartOf N5b7d9398de7c48b399e6a235a9447228
    21 N986ba7966f294d02967657f50e17a8d7
    22 sg:journal.1136292
    23 schema:name Development of a diffusion barrier layer for silicon and carbon in molybdenum—a physical vapor deposition approach
    24 schema:pagination 799-806
    25 schema:productId N3efd50aaa7c444aa9a9561e36a8a42ae
    26 N4a5294c2c38d4d9e8e4a43aeb4770816
    27 Ne41fdbf9f57b44c6b884e4ecff4c9d83
    28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051528952
    29 https://doi.org/10.1007/s11661-999-1012-x
    30 schema:sdDatePublished 2019-04-10T15:04
    31 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    32 schema:sdPublisher Na2cce051739f4972973f10b38c9c35a4
    33 schema:url http://link.springer.com/10.1007%2Fs11661-999-1012-x
    34 sgo:license sg:explorer/license/
    35 sgo:sdDataset articles
    36 rdf:type schema:ScholarlyArticle
    37 N1f58499b48b24775848032ebf69a9850 rdf:first sg:person.016667007201.91
    38 rdf:rest Nb4825dd6b2e74dae813a5990a542ee72
    39 N34e2801818b045e1aaf4ea2a4d0ef574 schema:name Whiteoak Semiconductors Ltd., 23150, Sandston, VA
    40 rdf:type schema:Organization
    41 N3efd50aaa7c444aa9a9561e36a8a42ae schema:name readcube_id
    42 schema:value f5765818d34e43ccdb92c0a4f5f6cc0c43b66dae983b90cc51869f58f476cbfe
    43 rdf:type schema:PropertyValue
    44 N4a5294c2c38d4d9e8e4a43aeb4770816 schema:name doi
    45 schema:value 10.1007/s11661-999-1012-x
    46 rdf:type schema:PropertyValue
    47 N5b7d9398de7c48b399e6a235a9447228 schema:volumeNumber 30
    48 rdf:type schema:PublicationVolume
    49 N5c9a866bbc544a65993d097a7bab8c4e rdf:first sg:person.0641164054.59
    50 rdf:rest N1f58499b48b24775848032ebf69a9850
    51 N986ba7966f294d02967657f50e17a8d7 schema:issueNumber 13
    52 rdf:type schema:PublicationIssue
    53 Na2cce051739f4972973f10b38c9c35a4 schema:name Springer Nature - SN SciGraph project
    54 rdf:type schema:Organization
    55 Nb4825dd6b2e74dae813a5990a542ee72 rdf:first sg:person.014666237315.02
    56 rdf:rest rdf:nil
    57 Nb61672dbc35444a7a930d2e11d36a351 rdf:first sg:person.016555125701.34
    58 rdf:rest N5c9a866bbc544a65993d097a7bab8c4e
    59 Nc933a07ec00f4433b0db78aa485a3a77 schema:name Department of Metallurgical and Materials Engineering, ACSEL, 80401-1887, Golden, CO
    60 rdf:type schema:Organization
    61 Ne41fdbf9f57b44c6b884e4ecff4c9d83 schema:name dimensions_id
    62 schema:value pub.1051528952
    63 rdf:type schema:PropertyValue
    64 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
    65 schema:name Engineering
    66 rdf:type schema:DefinedTerm
    67 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
    68 schema:name Materials Engineering
    69 rdf:type schema:DefinedTerm
    70 sg:journal.1136292 schema:issn 1073-5623
    71 1543-1940
    72 schema:name Metallurgical and Materials Transactions A
    73 rdf:type schema:Periodical
    74 sg:person.014666237315.02 schema:affiliation Nc933a07ec00f4433b0db78aa485a3a77
    75 schema:familyName Suryanarayana
    76 schema:givenName C.
    77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014666237315.02
    78 rdf:type schema:Person
    79 sg:person.016555125701.34 schema:affiliation N34e2801818b045e1aaf4ea2a4d0ef574
    80 schema:familyName Govindarajan
    81 schema:givenName S.
    82 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016555125701.34
    83 rdf:type schema:Person
    84 sg:person.016667007201.91 schema:affiliation https://www.grid.ac/institutes/grid.425878.4
    85 schema:familyName Disam
    86 schema:givenName J.
    87 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016667007201.91
    88 rdf:type schema:Person
    89 sg:person.0641164054.59 schema:affiliation https://www.grid.ac/institutes/grid.254549.b
    90 schema:familyName Moore
    91 schema:givenName J. J.
    92 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0641164054.59
    93 rdf:type schema:Person
    94 sg:pub.10.1007/978-94-011-1765-4_31 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041284427
    95 https://doi.org/10.1007/978-94-011-1765-4_31
    96 rdf:type schema:CreativeWork
    97 sg:pub.10.1007/bf02648333 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035025556
    98 https://doi.org/10.1007/bf02648333
    99 rdf:type schema:CreativeWork
    100 https://doi.org/10.1016/0022-5088(76)90005-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034704042
    101 rdf:type schema:CreativeWork
    102 https://doi.org/10.1016/0257-8972(94)90136-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1013251026
    103 rdf:type schema:CreativeWork
    104 https://doi.org/10.1016/0257-8972(95)02524-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000201027
    105 rdf:type schema:CreativeWork
    106 https://doi.org/10.1016/0921-5093(92)90308-n schema:sameAs https://app.dimensions.ai/details/publication/pub.1049675361
    107 rdf:type schema:CreativeWork
    108 https://doi.org/10.1016/0921-5093(92)90313-p schema:sameAs https://app.dimensions.ai/details/publication/pub.1006784110
    109 rdf:type schema:CreativeWork
    110 https://doi.org/10.1016/s0257-8972(96)03031-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046236590
    111 rdf:type schema:CreativeWork
    112 https://doi.org/10.1080/01418619508236219 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039983220
    113 rdf:type schema:CreativeWork
    114 https://doi.org/10.1557/s0883769400037519 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067962879
    115 rdf:type schema:CreativeWork
    116 https://www.grid.ac/institutes/grid.254549.b schema:alternateName Colorado School of Mines
    117 schema:name Advanced Coatings and Surface Engineering Laboratory (ACSEL), Colorado School of Mines, 80401-1887, Golden, CO
    118 Department of Metallurgical and Materials Engineering, Colorado School of Mines, 80401-1887, Golden, CO
    119 rdf:type schema:Organization
    120 https://www.grid.ac/institutes/grid.425878.4 schema:alternateName Schott (Germany)
    121 schema:name Schott Glaswerke, D-55014, Mainz, Germany
    122 Service Division Metals, Ceramics & Refractories, Glassmelting Technology, Mainz, Germany
    123 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...