One-step synthesis route of the aligned and non-aligned single crystalline α-Si3N4 nanowires View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-01

AUTHORS

Mashkoor Ahmad, Jiong Zhao, Fan Zhang, CaoFeng Pan, Jing Zhu

ABSTRACT

This paper reports the bulk synthesis route of the aligned and non-aligned high-quality α-Si3N4 nanowires (NWS) which were grown directly from the Si substrate by vapor phase deposition at 1050°. The as-grown products were characterized by employing XRD, SEM, HRTEM and photoluminescence. The microscopic results revealed that the products consist of single crystalline aligned and non-aligned α-Si3N4 NWs having a same diameter range of 30–100 nm and different lengths of about hundreds of microns. The XRD observation revealed that the products consist of α-phase Si3N4 NWs. The room temperature PL spectra indicated that the NWs have good emission property. The non-aligned NWs were formed at lower temperature as compared with aligned NWs. Our method is a simple and one-step procedure to synthesize the bulk-quantity and high-purity aligned and non-aligned α-Si3N4 NWs at a relatively low temperature. The possible growth mechanism was also briefly discussed. More... »

PAGES

1

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URI

http://scigraph.springernature.com/pub.10.1007/s11431-009-0010-y

DOI

http://dx.doi.org/10.1007/s11431-009-0010-y

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